Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical e...Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function （EEDF）.展开更多
A one-dimensional fluid model is adopted to simulate the characteristics of N2, O2, and N2/O2 dual-frequency （DF） capacitively coupled plasmas （CCPs） under typical conditions in PECVD technologies. Not only the gr...A one-dimensional fluid model is adopted to simulate the characteristics of N2, O2, and N2/O2 dual-frequency （DF） capacitively coupled plasmas （CCPs） under typical conditions in PECVD technologies. Not only the ground, the excited states but also the vibration levels of the main species are considered. The study focuses on the influence of external parameters such as matching of the high-frequency （HF） and low-frequency （LF）, HF and LF of the voltage sources, as well as discharge pressures, on physical characteristics of discharges. The results show that the decoupling of the two sources is possible by increasing the applied HF, the electron density and ion flux are determined only by the HF of the voltage source, whereas the LF has a little influence on the plasma characteristics. In addition, the matching of frequency affects the characteristics of discharges to some extent. Fhrthermore, the pressure is a main external parameter affecting the characteristics of discharges, and a small amount of oxygen in N2 plasma can efficiently increase N＋ ion flux incident onto the electrode and the density of N atom.展开更多
This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the in...This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency （LF） power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.展开更多
Diamond-like carbon （DLC） films were prepared with CH4-Ar using a capacitively coupled plasma enhanced chemical vapor deposition （CCP-CVD） method driven by dual-frequency of 41 MHz and 13.56 MHz in combination. Du...Diamond-like carbon （DLC） films were prepared with CH4-Ar using a capacitively coupled plasma enhanced chemical vapor deposition （CCP-CVD） method driven by dual-frequency of 41 MHz and 13.56 MHz in combination. Due to a coupling via bulk plasma, the self-bias voltage depended not only on the radiofrequency （RF） power of the corresponding electrode but also on another RF power of the counter electrode. The influence of the discharge parameters on the deposition rate, optical and Raman properties of the deposited films was investigated. The optical band decreased basically with the increase in the input power of both the low frequency and high frequency. Raman measurements show that the deposited films have a maximal sp3 content with an applied negative self-bias voltage of -150 V, while high frequency power causes a continuous increase in the sp3 content. The measurement of atomic force microscope （AFM） shows that the surface of the deposited films under ion-bombardment becomes smoother than those with non-intended self-bias voltage.展开更多
A one-dimensional(1D) fluid simulation of dual frequency discharge in helium gas at atmospheric pressure is carried out to investigate the role of the secondary electron emission on the surfaces of the electrodes. In ...A one-dimensional(1D) fluid simulation of dual frequency discharge in helium gas at atmospheric pressure is carried out to investigate the role of the secondary electron emission on the surfaces of the electrodes. In the simulation, electrons,ions of He^+ and He_2^+, metastable atoms of He*and metastable molecules of He*_2 are included. It is found that the secondary electron emission coefficient significantly influences plasma density and electric field as well as electron heating mechanisms and ionization rate. The particle densities increase with increasing SEE coefficient from 0 to 0.3 as well as the sheath's electric field and electron source. Moreover, the SEE coefficient also influences the electron heating mechanism and electron power dissipation in the plasma and both of them increase with increasing SEE coefficient within the range from 0 to 0.3 as a result of increasing of electron density.展开更多
Dual-frequency aegon discharge at 100 m Torr is modeled with a 2-D fluid model in this study. The plate gap of the system is 20 ram, and discharges are modeled at High Frequency （HF） 40 MHz, 60 MHz, 80 MHz, Low Freq...Dual-frequency aegon discharge at 100 m Torr is modeled with a 2-D fluid model in this study. The plate gap of the system is 20 ram, and discharges are modeled at High Frequency （HF） 40 MHz, 60 MHz, 80 MHz, Low Frequency （LF） 2 MHz, 5 MHz, 10 MHz, low-frequency voltage 50 V, 75 V, 100 V and high-frequency voltage 200 V, respectively. The spatial distribution of electron density and ion density and the periodic evolution of instantaneous electric potential in bulk plasma and sheath are discussed. The numerical results show that plasma density increases with HFs and LFs and LF voltage, while HFs has more effect on the density. It is concluded that improving the ratio of HFs/LFs and increasing LF voltages is a method to gain high density and high ion bombardment energy simultaneously based on the analysis of electric potential distribution.展开更多
A self-consistent fluid model for dual radio frequency argon capacitive glow discharges at low pressure is established. Numerical results are obtained by using a finite difference method to solve the model numerically...A self-consistent fluid model for dual radio frequency argon capacitive glow discharges at low pressure is established. Numerical results are obtained by using a finite difference method to solve the model numerically, and the results are analyzed to study the effect of gas pressure on the plasma characteristics. It shows that when the gas pressure increases from 0.3 Torr （1 Torr=1.33322102 Pa） to 1.5 Torr, the cycle-averaged plasma density and the ionization rate increase; the cycle-averaged ion current densities and ion energy densities on the electrodes electrode increase; the cycle-averaged electron temperature decreases. Also, the instantaneous electron density in the powered sheath region is presented and discussed. The cycle-averaged electric field has a complex behavior with the increasing of gas pressure, and its changes take place mainly in the two sheath regions. The cycle-averaged electron pressure heating, electron ohmic heating, electron heating, and electron energy loss are all influenced by the gas pressure. Two peaks of the electron heating appear in the sheath regions and the two peaks become larger and move to electrodes as the gas pressure increases.展开更多
基金supported by National Natural Science Foundation of China (Nos.10975105, 10575074, 10635010)
文摘Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function （EEDF）.
基金supported by National Natural Science Foundation of China(Nos.11335004 and 11375040)the Important National Science and Technology Specific Project(No.2011ZX02403-001)
文摘A one-dimensional fluid model is adopted to simulate the characteristics of N2, O2, and N2/O2 dual-frequency （DF） capacitively coupled plasmas （CCPs） under typical conditions in PECVD technologies. Not only the ground, the excited states but also the vibration levels of the main species are considered. The study focuses on the influence of external parameters such as matching of the high-frequency （HF） and low-frequency （LF）, HF and LF of the voltage sources, as well as discharge pressures, on physical characteristics of discharges. The results show that the decoupling of the two sources is possible by increasing the applied HF, the electron density and ion flux are determined only by the HF of the voltage source, whereas the LF has a little influence on the plasma characteristics. In addition, the matching of frequency affects the characteristics of discharges to some extent. Fhrthermore, the pressure is a main external parameter affecting the characteristics of discharges, and a small amount of oxygen in N2 plasma can efficiently increase N＋ ion flux incident onto the electrode and the density of N atom.
基金supported by National Natural Science Foundation of China(Nos.10975105,11075114)
文摘This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency （LF） power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.
基金supported by National Natural Science Foundation of China (No. 10775103)
文摘Diamond-like carbon （DLC） films were prepared with CH4-Ar using a capacitively coupled plasma enhanced chemical vapor deposition （CCP-CVD） method driven by dual-frequency of 41 MHz and 13.56 MHz in combination. Due to a coupling via bulk plasma, the self-bias voltage depended not only on the radiofrequency （RF） power of the corresponding electrode but also on another RF power of the counter electrode. The influence of the discharge parameters on the deposition rate, optical and Raman properties of the deposited films was investigated. The optical band decreased basically with the increase in the input power of both the low frequency and high frequency. Raman measurements show that the deposited films have a maximal sp3 content with an applied negative self-bias voltage of -150 V, while high frequency power causes a continuous increase in the sp3 content. The measurement of atomic force microscope （AFM） shows that the surface of the deposited films under ion-bombardment becomes smoother than those with non-intended self-bias voltage.
基金Project supported by the National Natural Science Foundation of China(Grant No.11505089)
文摘A one-dimensional(1D) fluid simulation of dual frequency discharge in helium gas at atmospheric pressure is carried out to investigate the role of the secondary electron emission on the surfaces of the electrodes. In the simulation, electrons,ions of He^+ and He_2^+, metastable atoms of He*and metastable molecules of He*_2 are included. It is found that the secondary electron emission coefficient significantly influences plasma density and electric field as well as electron heating mechanisms and ionization rate. The particle densities increase with increasing SEE coefficient from 0 to 0.3 as well as the sheath's electric field and electron source. Moreover, the SEE coefficient also influences the electron heating mechanism and electron power dissipation in the plasma and both of them increase with increasing SEE coefficient within the range from 0 to 0.3 as a result of increasing of electron density.
文摘Dual-frequency aegon discharge at 100 m Torr is modeled with a 2-D fluid model in this study. The plate gap of the system is 20 ram, and discharges are modeled at High Frequency （HF） 40 MHz, 60 MHz, 80 MHz, Low Frequency （LF） 2 MHz, 5 MHz, 10 MHz, low-frequency voltage 50 V, 75 V, 100 V and high-frequency voltage 200 V, respectively. The spatial distribution of electron density and ion density and the periodic evolution of instantaneous electric potential in bulk plasma and sheath are discussed. The numerical results show that plasma density increases with HFs and LFs and LF voltage, while HFs has more effect on the density. It is concluded that improving the ratio of HFs/LFs and increasing LF voltages is a method to gain high density and high ion bombardment energy simultaneously based on the analysis of electric potential distribution.
基金Project supported by the National Natural Science Foundation of China(Grant No.51172101)
文摘A self-consistent fluid model for dual radio frequency argon capacitive glow discharges at low pressure is established. Numerical results are obtained by using a finite difference method to solve the model numerically, and the results are analyzed to study the effect of gas pressure on the plasma characteristics. It shows that when the gas pressure increases from 0.3 Torr （1 Torr=1.33322102 Pa） to 1.5 Torr, the cycle-averaged plasma density and the ionization rate increase; the cycle-averaged ion current densities and ion energy densities on the electrodes electrode increase; the cycle-averaged electron temperature decreases. Also, the instantaneous electron density in the powered sheath region is presented and discussed. The cycle-averaged electric field has a complex behavior with the increasing of gas pressure, and its changes take place mainly in the two sheath regions. The cycle-averaged electron pressure heating, electron ohmic heating, electron heating, and electron energy loss are all influenced by the gas pressure. Two peaks of the electron heating appear in the sheath regions and the two peaks become larger and move to electrodes as the gas pressure increases.
