The flash memory technology meets physical and technical obstacles in further scaling. New structures and new materials are implemented as possible solutions. This paper focuses on two kinds of new flash cells for hig...The flash memory technology meets physical and technical obstacles in further scaling. New structures and new materials are implemented as possible solutions. This paper focuses on two kinds of new flash cells for high density and low power memory applications based on the vertical channel double gate structure. The proposed VD-NROM with dual-nitride-trapping-layer and vertical structure can achieve four-bit-per-cell storage capability. And the proposed VSAS-FG cell benefits the high programming efficiency, low power and high density capability, which can be realized without any additional mask and can achieve the self-alignment of the split-gate channel and the floating-gate. The two novel flash cell structures can be considered as potential candidates for different flash memory applications.展开更多
Objective: To assess cervical changes, duration of oxytocin infusion, mode of delivery and complications after cervical ripening using a double balloon device in women with a previous caesarean section. Methods: Longi...Objective: To assess cervical changes, duration of oxytocin infusion, mode of delivery and complications after cervical ripening using a double balloon device in women with a previous caesarean section. Methods: Longitudinal study including 80 women with a previous caesarean section, no previous vaginal delivery and an unfavourable cervix (Bishop展开更多
文摘The flash memory technology meets physical and technical obstacles in further scaling. New structures and new materials are implemented as possible solutions. This paper focuses on two kinds of new flash cells for high density and low power memory applications based on the vertical channel double gate structure. The proposed VD-NROM with dual-nitride-trapping-layer and vertical structure can achieve four-bit-per-cell storage capability. And the proposed VSAS-FG cell benefits the high programming efficiency, low power and high density capability, which can be realized without any additional mask and can achieve the self-alignment of the split-gate channel and the floating-gate. The two novel flash cell structures can be considered as potential candidates for different flash memory applications.
文摘Objective: To assess cervical changes, duration of oxytocin infusion, mode of delivery and complications after cervical ripening using a double balloon device in women with a previous caesarean section. Methods: Longitudinal study including 80 women with a previous caesarean section, no previous vaginal delivery and an unfavourable cervix (Bishop
