The goal of this paper is to design and develop low conversion loss mixers at Ku Band (12 - 18 GHz) in microstrip line configuration. The Ku-band (Kurtz-under band) is primarily used for satellite Communications, part...The goal of this paper is to design and develop low conversion loss mixers at Ku Band (12 - 18 GHz) in microstrip line configuration. The Ku-band (Kurtz-under band) is primarily used for satellite Communications, particularly for editing and broadcasting satellite television. CAD tools (Agilent’s Advance Design System software) have been used for simulation and optimization of the circuits. 180 degree balanced mixer configuration has been adopted due to better RF to LO isolation requirement. The circuit is designed on microstrip line using RT Duroid (Dielectric Constant = 2.22). Initially a rat race coupler (180 degree hybrid) was designed and simulated and optimized for required performance successfully.展开更多
基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中...基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。展开更多
文摘The goal of this paper is to design and develop low conversion loss mixers at Ku Band (12 - 18 GHz) in microstrip line configuration. The Ku-band (Kurtz-under band) is primarily used for satellite Communications, particularly for editing and broadcasting satellite television. CAD tools (Agilent’s Advance Design System software) have been used for simulation and optimization of the circuits. 180 degree balanced mixer configuration has been adopted due to better RF to LO isolation requirement. The circuit is designed on microstrip line using RT Duroid (Dielectric Constant = 2.22). Initially a rat race coupler (180 degree hybrid) was designed and simulated and optimized for required performance successfully.
文摘基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。
