Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SC...Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SCE) can be effectively suppressed by the insulator near the source/drain regions. And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate. The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied. Compared to the experimental data from Jurczak et al., the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET. The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node. The higher fT of 390 GHz is achieved, which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm. Finally, the design guideline and the optimal regions of the DMGDP MOSFET are discussed.展开更多
An impact ionization MOSFET （IMOS） is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope （SS） of conventional MOSFET at room temperature. In this work, first, the device performanc...An impact ionization MOSFET （IMOS） is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope （SS） of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET （DG-IMOS） is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG （dual material gate） DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better IoN, ION/IoFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized perform- ance is achieved including ION/IoFF ratio of 2.87 × 10^9 A/μm with/ON as 11.87 × 10^-4 A/μm and transconductance of 1.06× 10^-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.展开更多
The description given below will cover all the complete vehicles produced by the DMG during the "Eighth-Five-Year- Plan", which will surely help you with fully understanding the motor vehicle composition.
基金Supported by the National Natural Science Foundation of China (Grant No. 60206006)Program for the New Century Excellent Talents of Ministry of Education of China (Grant No. 681231366)the National Defense Pre-Research Foundation of China (Grant No. 51308040103)
文摘Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SCE) can be effectively suppressed by the insulator near the source/drain regions. And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate. The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied. Compared to the experimental data from Jurczak et al., the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET. The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node. The higher fT of 390 GHz is achieved, which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm. Finally, the design guideline and the optimal regions of the DMGDP MOSFET are discussed.
文摘An impact ionization MOSFET （IMOS） is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope （SS） of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET （DG-IMOS） is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG （dual material gate） DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better IoN, ION/IoFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized perform- ance is achieved including ION/IoFF ratio of 2.87 × 10^9 A/μm with/ON as 11.87 × 10^-4 A/μm and transconductance of 1.06× 10^-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.
文摘The description given below will cover all the complete vehicles produced by the DMG during the "Eighth-Five-Year- Plan", which will surely help you with fully understanding the motor vehicle composition.
