It is known that gas flow rate is a key factor in controlling industrial plasma processing. In this paper, a 2D PIC/MCC model is developed for an rf hollow cathode discharge with an axial nitrogen gas flow. The effect...It is known that gas flow rate is a key factor in controlling industrial plasma processing. In this paper, a 2D PIC/MCC model is developed for an rf hollow cathode discharge with an axial nitrogen gas flow. The effects of the gas flow rate on the plasma parameters are calculated and the results show that： with an increasing flow rate, the total ion（N＋2, N＋） density decreases, the mean sheath thickness becomes wider, the radial electric field in the sheath and the axial electric field show an increase, and the energies of both kinds of nitrogen ions increase;and, as the axial ion current density that is moving toward the ground electrode increases, the ion current density near the ground electrode increases. The simulation results will provide a useful reference for plasma jet technology involving rf hollow cathode discharges in N2.展开更多
基金supported by the Natural Science Foundation of Hebei Province,China(No.A2012205072)
文摘It is known that gas flow rate is a key factor in controlling industrial plasma processing. In this paper, a 2D PIC/MCC model is developed for an rf hollow cathode discharge with an axial nitrogen gas flow. The effects of the gas flow rate on the plasma parameters are calculated and the results show that： with an increasing flow rate, the total ion（N＋2, N＋） density decreases, the mean sheath thickness becomes wider, the radial electric field in the sheath and the axial electric field show an increase, and the energies of both kinds of nitrogen ions increase;and, as the axial ion current density that is moving toward the ground electrode increases, the ion current density near the ground electrode increases. The simulation results will provide a useful reference for plasma jet technology involving rf hollow cathode discharges in N2.
