采用直接功率注入法(direct power injection,DPI)对一款新型磁随机存储器(magneto resistive random access memory,MRAM)芯片进行了抗干扰测试。在存储数字“0”和“1”的情况下,对MRAM的电源引脚、数据引脚、控制引脚进行了干扰注入...采用直接功率注入法(direct power injection,DPI)对一款新型磁随机存储器(magneto resistive random access memory,MRAM)芯片进行了抗干扰测试。在存储数字“0”和“1”的情况下,对MRAM的电源引脚、数据引脚、控制引脚进行了干扰注入,对比了各引脚的失效功率。测试结果表明:MRAM在存储数字“0”时的敏感度比数字“1”时的敏感度低;与干扰从地引脚注入相比,干扰从电源引脚注入时芯片的敏感度更高;读取电路电磁敏感度和输出引脚与电源引脚具有较大相关性。这一研究结果可为提升新型存储器MRAM的芯片抗扰度及电路优化提供理论参考。展开更多
针对典型数字信号控制器(Digital Signal Controller,DSC)的电磁兼容问题,提出了电磁特性与温度特性相结合的分析方法,研究了环境温度对其传导电磁敏感度的影响.结合电磁敏感度行为级模型结构,分析了电磁干扰的作用机制,导出了DSC中金属...针对典型数字信号控制器(Digital Signal Controller,DSC)的电磁兼容问题,提出了电磁特性与温度特性相结合的分析方法,研究了环境温度对其传导电磁敏感度的影响.结合电磁敏感度行为级模型结构,分析了电磁干扰的作用机制,导出了DSC中金属-氧化物-半导体(Metal-Oxide-Semiconductor,MOS)器件阈值电压和迁移率随环境温度的变化关系;利用直接功率注入与环境温度联合控制技术,从实验和仿真两个方面分析了模型各部分特征参数在不同温度下的变化,揭示了电磁敏感度在不同环境温度下变化的内在因素,并测试了不同温度下典型DSC的电磁敏感度阈值.结果表明,DSC敏感度行为单元中MOS器件阈值电压和迁移率在不同温度下的变化,会造成其电磁敏感度随环境温度产生显著漂移.展开更多
To promote the modeling standardization process of the integrated circuits, an improved electrical simulation model for a direct power injection （DPI） setup which was used to measure the conducted immunity of a 16-b...To promote the modeling standardization process of the integrated circuits, an improved electrical simulation model for a direct power injection （DPI） setup which was used to measure the conducted immunity of a 16-bit microcontroller to radio frequency aggression was investigated. Based on the existing model of the same microcontroller, the PDN module was modified by adding the core, PLL and MD network models, which could reflect the actual electric distribution situation within the microcontroller more accurately. By comparing the simulation results with the measurement results, the effectiveness of the modified model can be improved to 500 MHz, and its uncertainty is within ＋1.8 dB （＋2 dB is acceptable）. Then, to improve the simulation accuracy of the complete model in the high frequency range, the I/O model which contained the dynamic and nonlinear characteristics reflecting the variation of the internal impedance of the microcontroller with increasing the frequency of the external noise was introduced. By comparing the simulation results with the measurement results, the effectiveness of the second modified model can be improved up to 1.4 GHz with the uncertainty of ~1.8 dB. Thus, a conclusion can be reached that the proposed model can be applied to a much wider frequency range with a smaller uncertainty than the latest model of the similar type. Furthermore, associated with the electromagnetic emission testing platform model, the PDN module can also be used to predict the electromagnetic conducted and radiated emission characteristics. This modeling method can also be applied to other integrated circuits, which is very helpful to the standardization of the IC electromagnetic compatibility （EMC） modeling process.展开更多
A certain amount of ammonia reducer were directly injected into the 4102BZLQ Diesel engine's combustion chamber when the combustion temperature decreases to 1573-1073K, NOx generated could be reduced to 1.11g/(kW&...A certain amount of ammonia reducer were directly injected into the 4102BZLQ Diesel engine's combustion chamber when the combustion temperature decreases to 1573-1073K, NOx generated could be reduced to 1.11g/(kW·h). Based on PRF combustion mechanism, NO was tested by using the heavy-duty diesel engine test cycle of ESC thirteen conditions[1], the ammonia spray angle and amount were tested and optimized in different conditions. The test results show that the thermal efficiency of Diesel engine does not decrease while NO exhaust decreases.展开更多
考虑到芯片实际应用环境的复杂性,针对体硅(silicon,Si)和绝缘体上硅(silicon on insulator,SOI)两种工艺的静态随机存储器(static random-access memory,SRAM),测试研究温度效应分别对这两种不同工艺存储器芯片敏感度的影响.依据两种...考虑到芯片实际应用环境的复杂性,针对体硅(silicon,Si)和绝缘体上硅(silicon on insulator,SOI)两种工艺的静态随机存储器(static random-access memory,SRAM),测试研究温度效应分别对这两种不同工艺存储器芯片敏感度的影响.依据两种工艺下金属氧化物半导体(metal oxide semiconductor,MOS)器件结构的异同,对两种工艺下MOS器件的温度效应进行了对比分析;结合温箱和直接功率注入法(direct power injection,DPI)的测试设备,搭建了一个可用于评估温度和电磁干扰(electromagnetic interference,EMI)共同作用到SRAM的测试平台.通过理论与试验研究发现随着温度的升高,两款不同工艺的SRAM存储器芯片敏感度阈值都会增加,且在100 MHz之后SOI工艺的敏感度阈值增加普遍大于体Si工艺,这对于SOI和体Si工艺集成电路在高低温环境下电磁兼容性的研究具有一定意义.展开更多
针对电压不平衡条件下VSC-MVDC系统的控制,提出了基于比例积分微分（proportional-integral-derivative,PID）加谐振（proportional-integral-derivative plus resonant,PIDR）的滑模直接功率控制（sliding mode control direct power c...针对电压不平衡条件下VSC-MVDC系统的控制,提出了基于比例积分微分（proportional-integral-derivative,PID）加谐振（proportional-integral-derivative plus resonant,PIDR）的滑模直接功率控制（sliding mode control direct power control,SMC DPC）策略。推导出一种在保证网侧电流无畸变的条件下对有功和无功纹波幅值之比连续调节的方法。为消除无功纹波对有功输出的影响,提出一种逆向有功纹波注入的策略。应用滑模控制方法设计了包含比例、积分、微分和谐振等控制律的跟踪控制器。其中,谐振控制用于消除有功和无功动态之间耦合对控制性能的影响,有功和无功参考的微分通过简单的代数运算得到。有功和无功纹波控制目标实质相同,对有功采用PIDR而无功采用PID即可实现精确的功率控制。基于SIMULINK/MATLAB平台对一个两端VSC-MVDC系统进行仿真实验,验证了该PIDRSMC DPC策略的有效性。展开更多
提出1种描述微控制器直接功率注入(direct power injection,DPI)测量电磁传导抗扰度特性的模型.该模型在国际已有模型的基础上,在PDN模块中增加了内核网络、PLL,A/D网络等模型,能更精确的反映PDN的物理情况,同时能实现集成电路电磁兼容...提出1种描述微控制器直接功率注入(direct power injection,DPI)测量电磁传导抗扰度特性的模型.该模型在国际已有模型的基础上,在PDN模块中增加了内核网络、PLL,A/D网络等模型,能更精确的反映PDN的物理情况,同时能实现集成电路电磁兼容模型的标准化建模.最后,在不同频率的射频电磁干扰下对微控制器被测I/O端口抗扰度进行仿真分析,并与测量结果对比,结果表明在500 MHz以下,模型预测抗扰度的不确定度在允许范围内.该模型应用于PCB级别,可精确仿真PCB板的电磁兼容情况,仿真精度远高于使用IBIS模型.展开更多
文摘采用直接功率注入法(direct power injection,DPI)对一款新型磁随机存储器(magneto resistive random access memory,MRAM)芯片进行了抗干扰测试。在存储数字“0”和“1”的情况下,对MRAM的电源引脚、数据引脚、控制引脚进行了干扰注入,对比了各引脚的失效功率。测试结果表明:MRAM在存储数字“0”时的敏感度比数字“1”时的敏感度低;与干扰从地引脚注入相比,干扰从电源引脚注入时芯片的敏感度更高;读取电路电磁敏感度和输出引脚与电源引脚具有较大相关性。这一研究结果可为提升新型存储器MRAM的芯片抗扰度及电路优化提供理论参考。
文摘针对典型数字信号控制器(Digital Signal Controller,DSC)的电磁兼容问题,提出了电磁特性与温度特性相结合的分析方法,研究了环境温度对其传导电磁敏感度的影响.结合电磁敏感度行为级模型结构,分析了电磁干扰的作用机制,导出了DSC中金属-氧化物-半导体(Metal-Oxide-Semiconductor,MOS)器件阈值电压和迁移率随环境温度的变化关系;利用直接功率注入与环境温度联合控制技术,从实验和仿真两个方面分析了模型各部分特征参数在不同温度下的变化,揭示了电磁敏感度在不同环境温度下变化的内在因素,并测试了不同温度下典型DSC的电磁敏感度阈值.结果表明,DSC敏感度行为单元中MOS器件阈值电压和迁移率在不同温度下的变化,会造成其电磁敏感度随环境温度产生显著漂移.
基金Project(2007dfa71250) supported by the International Science and Technology Cooperative Program of ChinaProject(20062250) supported by the Doctor Fund of North China Electric Power University, China
文摘To promote the modeling standardization process of the integrated circuits, an improved electrical simulation model for a direct power injection （DPI） setup which was used to measure the conducted immunity of a 16-bit microcontroller to radio frequency aggression was investigated. Based on the existing model of the same microcontroller, the PDN module was modified by adding the core, PLL and MD network models, which could reflect the actual electric distribution situation within the microcontroller more accurately. By comparing the simulation results with the measurement results, the effectiveness of the modified model can be improved to 500 MHz, and its uncertainty is within ＋1.8 dB （＋2 dB is acceptable）. Then, to improve the simulation accuracy of the complete model in the high frequency range, the I/O model which contained the dynamic and nonlinear characteristics reflecting the variation of the internal impedance of the microcontroller with increasing the frequency of the external noise was introduced. By comparing the simulation results with the measurement results, the effectiveness of the second modified model can be improved up to 1.4 GHz with the uncertainty of ~1.8 dB. Thus, a conclusion can be reached that the proposed model can be applied to a much wider frequency range with a smaller uncertainty than the latest model of the similar type. Furthermore, associated with the electromagnetic emission testing platform model, the PDN module can also be used to predict the electromagnetic conducted and radiated emission characteristics. This modeling method can also be applied to other integrated circuits, which is very helpful to the standardization of the IC electromagnetic compatibility （EMC） modeling process.
基金Sponsored by the Hunan Science and Technology Agency Science Research Program 09(2009GK3091)the Hunan Provincial Education Department Science Research Program 09(09C1138)
文摘A certain amount of ammonia reducer were directly injected into the 4102BZLQ Diesel engine's combustion chamber when the combustion temperature decreases to 1573-1073K, NOx generated could be reduced to 1.11g/(kW·h). Based on PRF combustion mechanism, NO was tested by using the heavy-duty diesel engine test cycle of ESC thirteen conditions[1], the ammonia spray angle and amount were tested and optimized in different conditions. The test results show that the thermal efficiency of Diesel engine does not decrease while NO exhaust decreases.
文摘针对电压不平衡条件下VSC-MVDC系统的控制,提出了基于比例积分微分（proportional-integral-derivative,PID）加谐振（proportional-integral-derivative plus resonant,PIDR）的滑模直接功率控制（sliding mode control direct power control,SMC DPC）策略。推导出一种在保证网侧电流无畸变的条件下对有功和无功纹波幅值之比连续调节的方法。为消除无功纹波对有功输出的影响,提出一种逆向有功纹波注入的策略。应用滑模控制方法设计了包含比例、积分、微分和谐振等控制律的跟踪控制器。其中,谐振控制用于消除有功和无功动态之间耦合对控制性能的影响,有功和无功参考的微分通过简单的代数运算得到。有功和无功纹波控制目标实质相同,对有功采用PIDR而无功采用PID即可实现精确的功率控制。基于SIMULINK/MATLAB平台对一个两端VSC-MVDC系统进行仿真实验,验证了该PIDRSMC DPC策略的有效性。
文摘提出1种描述微控制器直接功率注入(direct power injection,DPI)测量电磁传导抗扰度特性的模型.该模型在国际已有模型的基础上,在PDN模块中增加了内核网络、PLL,A/D网络等模型,能更精确的反映PDN的物理情况,同时能实现集成电路电磁兼容模型的标准化建模.最后,在不同频率的射频电磁干扰下对微控制器被测I/O端口抗扰度进行仿真分析,并与测量结果对比,结果表明在500 MHz以下,模型预测抗扰度的不确定度在允许范围内.该模型应用于PCB级别,可精确仿真PCB板的电磁兼容情况,仿真精度远高于使用IBIS模型.
