The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons ...The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.展开更多
Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching mea...Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching measurements.The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gatedrain capacitance characteristic curves.Frequency-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation dielectric.Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.展开更多
The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory.However,such a weakness can be used as an ass...The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory.However,such a weakness can be used as an asset for generating the random bits,which is valuable in a hardware security system.In this work,a forming-free electronic bipolar Pt/Ti/Ta2O5/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device.The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the"oxygen grabbing"process.The stochasticity of the electrons trapping/detrapping governs the random distribution of the set/reset switching voltages of the device,making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal.The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.展开更多
Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectro...Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectronic applications.Herein,a comprehensive investigation of the two-dimensional(2D)charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K.To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs,an empirical equation was derived from a theoretical trapping model,and a carrier velocity distribution was determined from the differentiation of the transient response.Furthermore,charge trapping and de-trapping in shallow-and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate.The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.展开更多
基金Project supported by the National Instrumentation Program,China(Grant No.2011YQ040082)the National Natural Science Foundation of China(Grant Nos.61274081,51372205,and 51202197)+1 种基金the National 973 Project of China(Grant No.2011CB610400),the China Postdoctoral Science Foundation(Grant No.2014M550509)the 111 Project of China(Grant No.B08040)
文摘The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.
基金the National Natural Science Foundation of China under Grant 61822407,Grant 61527816,Grant 11634002,Grant 61631021,Grant 62074161,Grant 62004213,and Grant U20A20208in part by the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(CAS)under Grant QYZDB-SSW-JSC012+2 种基金in part by the Youth Innovation Promotion Association of CASin part by the University of CASthe Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,CAS.
文摘Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching measurements.The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gatedrain capacitance characteristic curves.Frequency-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation dielectric.Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.
基金Project supported by the National Natural Science Foundation of China(Grant No.61832007)the National Key Research and Development Program of China(Grant No.2018YFB1003304)。
文摘The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory.However,such a weakness can be used as an asset for generating the random bits,which is valuable in a hardware security system.In this work,a forming-free electronic bipolar Pt/Ti/Ta2O5/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device.The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the"oxygen grabbing"process.The stochasticity of the electrons trapping/detrapping governs the random distribution of the set/reset switching voltages of the device,making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal.The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.
基金supported by the National Research Foundation of Korea grant funded by the Korea government(MSIT)(NRF-2021R1A2C2012855).
文摘Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectronic applications.Herein,a comprehensive investigation of the two-dimensional(2D)charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K.To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs,an empirical equation was derived from a theoretical trapping model,and a carrier velocity distribution was determined from the differentiation of the transient response.Furthermore,charge trapping and de-trapping in shallow-and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate.The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.
