Charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence m...Charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence measurements over InAs/InP, and InAs/GaAs based p-i-n structures. In InAs/InP elongated QDs (QDashes) structure, injected carriers were tunneled from the quantum well into QDashes through a thin barrier and subsequently recombined within QDashes. Meanwhile, for InAs/GaAs structure, tunneling kind transport was exhibited in both forward and reverse bias voltage directions. The onset of light took place when the forward bias exceeded 1.3 V (3 V) for InAs/InP (InAs/GaAs) p-i-n structure through electroluminescence measurements. The peak value of emitted laser light for InAs/InP QDashes and InAs/GaAs QDs occurred in 1.55 μm and 1.3 μm, respectively.展开更多
目的观察针刺联合康复训练治疗脑卒中后肩手综合征(shoulder-hand syndrome,SHS)急性期患者的临床疗效和意义。方法将符合诊断和纳入标准的98例脑卒中后SHS患者随机分成观察组和对照组,每组49例。对照组采取常规治疗并配合康复训练,观...目的观察针刺联合康复训练治疗脑卒中后肩手综合征(shoulder-hand syndrome,SHS)急性期患者的临床疗效和意义。方法将符合诊断和纳入标准的98例脑卒中后SHS患者随机分成观察组和对照组,每组49例。对照组采取常规治疗并配合康复训练,观察组在对照组的基础上采用针刺穴位疗法,观察治疗后的临床疗效,比较两组患者治疗前后的肩痛视觉模拟评分(visual analogue scale,VAS)、患侧手肿胀评定、上肢功能评定表评分(disabilities of the arm,shoulder and hand,DASH)和Fugl-Meyer评分(Fugl-Meyer assessment scale,FMA)。结果治疗后,两组患者肩膀VAS评分、患侧手肿胀评分和DASH评分均较治疗前有所下降,FMA评分均较治疗前升高,差异有显著统计学意义(P<0.01),且观察组VAS评分、患侧手肿胀评分和DASH评分均低于对照组,FMA评分高于对照组,差异有统计学意义(P<0.05或P<0.01);观察组临床总有效率为83.7%,与对照组的73.5%比较,差异有统计学意义(P<0.05)。结论针刺联合康复训练对脑卒中后肩手综合征急性期患者的疗效显著,显著改善患侧上肢运动功能,值得临床推广。展开更多
文摘Charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence measurements over InAs/InP, and InAs/GaAs based p-i-n structures. In InAs/InP elongated QDs (QDashes) structure, injected carriers were tunneled from the quantum well into QDashes through a thin barrier and subsequently recombined within QDashes. Meanwhile, for InAs/GaAs structure, tunneling kind transport was exhibited in both forward and reverse bias voltage directions. The onset of light took place when the forward bias exceeded 1.3 V (3 V) for InAs/InP (InAs/GaAs) p-i-n structure through electroluminescence measurements. The peak value of emitted laser light for InAs/InP QDashes and InAs/GaAs QDs occurred in 1.55 μm and 1.3 μm, respectively.
文摘目的观察针刺联合康复训练治疗脑卒中后肩手综合征(shoulder-hand syndrome,SHS)急性期患者的临床疗效和意义。方法将符合诊断和纳入标准的98例脑卒中后SHS患者随机分成观察组和对照组,每组49例。对照组采取常规治疗并配合康复训练,观察组在对照组的基础上采用针刺穴位疗法,观察治疗后的临床疗效,比较两组患者治疗前后的肩痛视觉模拟评分(visual analogue scale,VAS)、患侧手肿胀评定、上肢功能评定表评分(disabilities of the arm,shoulder and hand,DASH)和Fugl-Meyer评分(Fugl-Meyer assessment scale,FMA)。结果治疗后,两组患者肩膀VAS评分、患侧手肿胀评分和DASH评分均较治疗前有所下降,FMA评分均较治疗前升高,差异有显著统计学意义(P<0.01),且观察组VAS评分、患侧手肿胀评分和DASH评分均低于对照组,FMA评分高于对照组,差异有统计学意义(P<0.05或P<0.01);观察组临床总有效率为83.7%,与对照组的73.5%比较,差异有统计学意义(P<0.05)。结论针刺联合康复训练对脑卒中后肩手综合征急性期患者的疗效显著,显著改善患侧上肢运动功能,值得临床推广。
