The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in s...The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation.Moreover,the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element.During the initial annealing of co-implanted Ge,it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies,resulting in the reduced vacancy-assisted diffusion of phosphorus.The maximum activation concentration of about 4.4 ×10^(20) cm^(-3) with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm^(2).The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61904155)the Science and technology Project of Fujian Provincial Department of Education,China(Grant No.JAT200484)+1 种基金the Natural Science Foundation of Fujian Province,China(Grant No.2018J05115)the Scientific Research Projects of Xiamen University of Technology,China(Grant No.YKJCX2020078).
文摘The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation.Moreover,the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element.During the initial annealing of co-implanted Ge,it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies,resulting in the reduced vacancy-assisted diffusion of phosphorus.The maximum activation concentration of about 4.4 ×10^(20) cm^(-3) with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm^(2).The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.
