The performance of a partially depleted silicon-on-insulator (PDSO1) dynamic threshold MOSFET (DT- MOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce t...The performance of a partially depleted silicon-on-insulator (PDSO1) dynamic threshold MOSFET (DT- MOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce the body resistance greatly, but the body capacitance also increases significantly at the same time. To solve this problem, a novel SOl DTMOSFET structure (drain/source-on-local-insulator structure) is proposed. From ISE simulation, the improvement in delay, obtained by optimizing p-n junction depth and silicon film thickness, is very significant. At the same time, we find that the drive current increases significantly as the thickness of the silicon film increases. Furthermore, only one additional mask is needed to form the local SIMOX, and other fabrication processes are fully compatible with conventional CMOS/SOI technology.展开更多
采用多项式符号代数理论建立了包含时序元件的整个同步时序电路的统一多项式符号描述形式,并采用WGL(weighted general lists)模型进行多项式的符号运算.在时序电路统一多项式描述和及其WGL运算的基础上,通过对有限状态机的简化比较,提...采用多项式符号代数理论建立了包含时序元件的整个同步时序电路的统一多项式符号描述形式,并采用WGL(weighted general lists)模型进行多项式的符号运算.在时序电路统一多项式描述和及其WGL运算的基础上,通过对有限状态机的简化比较,提出一种完全考虑周期的时序特性的时钟周期确定算法.该方法打破了传统上认为时钟周期要不小于实际传输延迟的认识;通过对多种现有方法的实验比较,该方法可以在不增加计算复杂度的情况下比现有方法找到更精确的时钟周期;实验还表明电路正常工作的时钟周期可以在不使用流水的情况下比实际传输延迟小很多.展开更多
提出了一种用于高侧开关的短路限流及保护电路。电路采用二级保护的方式,当短路检测电压不为零且低于参考电压时,限制栅源电压,对电路限流;当短路检测电压高于参考电压时,则延时一段时间后关断功率管。芯片采用0.18μm 100 V BCD工艺流...提出了一种用于高侧开关的短路限流及保护电路。电路采用二级保护的方式,当短路检测电压不为零且低于参考电压时,限制栅源电压,对电路限流;当短路检测电压高于参考电压时,则延时一段时间后关断功率管。芯片采用0.18μm 100 V BCD工艺流片。测试结果表明,在先工作后短路和先短路后工作两种情况下,功率管均处于正常工作状态。电路工作电压范围为4~80 V,短路延时时间约200μs,输出最大可持续电流可达80 A。展开更多
文摘The performance of a partially depleted silicon-on-insulator (PDSO1) dynamic threshold MOSFET (DT- MOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce the body resistance greatly, but the body capacitance also increases significantly at the same time. To solve this problem, a novel SOl DTMOSFET structure (drain/source-on-local-insulator structure) is proposed. From ISE simulation, the improvement in delay, obtained by optimizing p-n junction depth and silicon film thickness, is very significant. At the same time, we find that the drive current increases significantly as the thickness of the silicon film increases. Furthermore, only one additional mask is needed to form the local SIMOX, and other fabrication processes are fully compatible with conventional CMOS/SOI technology.
文摘采用多项式符号代数理论建立了包含时序元件的整个同步时序电路的统一多项式符号描述形式,并采用WGL(weighted general lists)模型进行多项式的符号运算.在时序电路统一多项式描述和及其WGL运算的基础上,通过对有限状态机的简化比较,提出一种完全考虑周期的时序特性的时钟周期确定算法.该方法打破了传统上认为时钟周期要不小于实际传输延迟的认识;通过对多种现有方法的实验比较,该方法可以在不增加计算复杂度的情况下比现有方法找到更精确的时钟周期;实验还表明电路正常工作的时钟周期可以在不使用流水的情况下比实际传输延迟小很多.