HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al（Pt）/HfGdO/Ge MOS structures were investigated at room temperatu...HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al（Pt）/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.展开更多
The(001) oriented BiFeO_3 thin film was deposited on the Nb: SrTiO_3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO_3/Nb: SrTiO_3 het...The(001) oriented BiFeO_3 thin film was deposited on the Nb: SrTiO_3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO_3/Nb: SrTiO_3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.展开更多
基金Project supported by the Natural Science Foundation of Shanghai(No.15ZR1418700)the Natural Science Foundation of China(Nos.51272159,61405118)the Natural Science Foundation of Zhejiang(Nos.LY15A040001,LQ13A040004)
文摘HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al（Pt）/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.
基金Funded by the National Natural Science Foundation of China(Nos.61201046 and 61306057)the Beijing Natural Science Foundation of China(Nos.4162013,2132023 and 4164082)+2 种基金the Beijing Postdoctoral Research Foundation(No.2015ZZ-33)the Scientific Research Project of Beijing Educational Committee(No.KM201610005005)the Scientific Research Foundation for Returned Overseas Chinese Scholars,State Education Ministry
文摘The(001) oriented BiFeO_3 thin film was deposited on the Nb: SrTiO_3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO_3/Nb: SrTiO_3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
