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Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells
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作者 冯列峰 赵昆 +2 位作者 戴海涛 王树国 孙小卫 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第3期366-370,共5页
Negative capacitance (NC) in dye-sensitized solar cells (DSCs) has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carder's transport l... Negative capacitance (NC) in dye-sensitized solar cells (DSCs) has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carder's transport layer is explored theoreti- cally in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current (AC) recombination resistance (Rrac) and the direct current (DC) recombination resistance (Rrdc), which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage. 展开更多
关键词 dye-sensitized solar-cells (DSCs) negative capacitance (NC) small-signal perturbation carrierstransport
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