The potential of GaN as a wide band gap semiconductor is explored for application as double drift region mixed tunneling avalanche transit time （MITATT） diodes for operation at 120 GHz, 220 GHz and 0.35 THz using so...The potential of GaN as a wide band gap semiconductor is explored for application as double drift region mixed tunneling avalanche transit time （MITATT） diodes for operation at 120 GHz, 220 GHz and 0.35 THz using some computer simulation methods developed by our group. The salient features of our results have uncovered some peculiarities of the GaN based MITATT devices. An efficiency of more than 20% right up to a frequency of 0.35 THz （from the GaN MITATT diode） seems highly encouraging but a power output of only 0.76 W is indicative of its dismal fate. The existence of a noise measure minimum at the operating frequency of 0.35 THz is again exhilarating but the value of the minimum is miserably high i.e. more than 33 dB. Thus, although GaN is a wide band gap semiconductor, the disparate carrier velocities prevent its full potential from being exploited for application as MTATT diodes.展开更多
Because of both ozone gas and ozone solution are instable which limits the application of ozone, to solve the storage problem, it is necessary to find a kind ofideal ozone carrier which can combine ozone as an ＂ozoni...Because of both ozone gas and ozone solution are instable which limits the application of ozone, to solve the storage problem, it is necessary to find a kind ofideal ozone carrier which can combine ozone as an ＂ozonic compound＂ in which the bond strength between ozone and carrier should not be too high or too low, to appropriately release ozone from the ozonic compound. Combining Criegee’s three-step reaction mechanism of ozone and olefins, the charge, covalent bond levels and energy levels of ozone, ethylene, butadiene and their ozonic compounds were calculated by the first-principles calculation method based on density functional theory methods. The stability of the ozonide, or the bond strength between ozone and ions of carrier were controlled felicitously to release ozone from the ozonide with proper velocity. Ozone antimicrobial was composed on the above principle. It can be used conveniently, especially for common families.展开更多
文摘The potential of GaN as a wide band gap semiconductor is explored for application as double drift region mixed tunneling avalanche transit time （MITATT） diodes for operation at 120 GHz, 220 GHz and 0.35 THz using some computer simulation methods developed by our group. The salient features of our results have uncovered some peculiarities of the GaN based MITATT devices. An efficiency of more than 20% right up to a frequency of 0.35 THz （from the GaN MITATT diode） seems highly encouraging but a power output of only 0.76 W is indicative of its dismal fate. The existence of a noise measure minimum at the operating frequency of 0.35 THz is again exhilarating but the value of the minimum is miserably high i.e. more than 33 dB. Thus, although GaN is a wide band gap semiconductor, the disparate carrier velocities prevent its full potential from being exploited for application as MTATT diodes.
文摘Because of both ozone gas and ozone solution are instable which limits the application of ozone, to solve the storage problem, it is necessary to find a kind ofideal ozone carrier which can combine ozone as an ＂ozonic compound＂ in which the bond strength between ozone and carrier should not be too high or too low, to appropriately release ozone from the ozonic compound. Combining Criegee’s three-step reaction mechanism of ozone and olefins, the charge, covalent bond levels and energy levels of ozone, ethylene, butadiene and their ozonic compounds were calculated by the first-principles calculation method based on density functional theory methods. The stability of the ozonide, or the bond strength between ozone and ions of carrier were controlled felicitously to release ozone from the ozonide with proper velocity. Ozone antimicrobial was composed on the above principle. It can be used conveniently, especially for common families.
