基于多天线正交频分复用(MIMO-OFDM)系统提出了一种根据信道状态信息进行自适应比特交织的混合自动重传请求(HARQ)方案,它充分利用信道的状态信息对每次重传的比特进行交织来获得频率分集增益和平均各个比特间的可靠性。仿真结果表明,在...基于多天线正交频分复用(MIMO-OFDM)系统提出了一种根据信道状态信息进行自适应比特交织的混合自动重传请求(HARQ)方案,它充分利用信道的状态信息对每次重传的比特进行交织来获得频率分集增益和平均各个比特间的可靠性。仿真结果表明,在Type III HARQ类型(包括Chase合并和部分冗余递增)下,该方案可以有效降低系统的误码率性能。展开更多
Considerable research has considered the design of low-power and high-speed devices.Designing integrated circuits with low-power consumption is an important issue due to the rapid growth of high-speed devices.Embedded...Considerable research has considered the design of low-power and high-speed devices.Designing integrated circuits with low-power consumption is an important issue due to the rapid growth of high-speed devices.Embedded static random-access memory(SRAM)units are necessary components in fast mobile computing.Traditional SRAM cells are more energyconsuming and with lower performances.The major constraints in SRAM cells are their reliability and low power.The objectives of the proposed method are to provide a high read stability,low energy consumption,and better writing abilities.A transmission gate-based multi-threshold single-ended Schmitt trigger(ST)9T SRAM cell in a bit-interleaving structure without a write-back scheme is proposed.Herein,an ST inverter with a single bit-line design is used to attain the high read stability.A negative assist technique is applied to alter the trip voltage of the single-ended ST inverter.The multithreshold complementary metal oxide semiconductor(MTCMOS)technique is adopted to reduce the leakage power in the proposed single-ended TGST 9T SRAM cell.The proposed system uses a combination of standard and ST inverters,which results in a large read stability.Compared with the previous ST 9T,ST 11T,11T,10T,and 7T SRAM cells,the proposed cell is implemented in Cadence Virtuoso ADE with 45-nm CMOS technology and consumes 35.80%,42.09%,31.60%,12.54%,and 31.60%less energy for read operations and 73.59%,93.95%,92.76%,89.23%,and 85.78%less energy for write operations,respectively.展开更多
文摘基于多天线正交频分复用(MIMO-OFDM)系统提出了一种根据信道状态信息进行自适应比特交织的混合自动重传请求(HARQ)方案,它充分利用信道的状态信息对每次重传的比特进行交织来获得频率分集增益和平均各个比特间的可靠性。仿真结果表明,在Type III HARQ类型(包括Chase合并和部分冗余递增)下,该方案可以有效降低系统的误码率性能。
文摘Considerable research has considered the design of low-power and high-speed devices.Designing integrated circuits with low-power consumption is an important issue due to the rapid growth of high-speed devices.Embedded static random-access memory(SRAM)units are necessary components in fast mobile computing.Traditional SRAM cells are more energyconsuming and with lower performances.The major constraints in SRAM cells are their reliability and low power.The objectives of the proposed method are to provide a high read stability,low energy consumption,and better writing abilities.A transmission gate-based multi-threshold single-ended Schmitt trigger(ST)9T SRAM cell in a bit-interleaving structure without a write-back scheme is proposed.Herein,an ST inverter with a single bit-line design is used to attain the high read stability.A negative assist technique is applied to alter the trip voltage of the single-ended ST inverter.The multithreshold complementary metal oxide semiconductor(MTCMOS)technique is adopted to reduce the leakage power in the proposed single-ended TGST 9T SRAM cell.The proposed system uses a combination of standard and ST inverters,which results in a large read stability.Compared with the previous ST 9T,ST 11T,11T,10T,and 7T SRAM cells,the proposed cell is implemented in Cadence Virtuoso ADE with 45-nm CMOS technology and consumes 35.80%,42.09%,31.60%,12.54%,and 31.60%less energy for read operations and 73.59%,93.95%,92.76%,89.23%,and 85.78%less energy for write operations,respectively.
