为了提高现有电除尘器的除尘效果,提出一种横向双极电除尘器,将其与常规电除尘器在相同条件下进行伏安特性、压力损失、除尘效率性能对比。结果表明:横向双极电除尘器的压力损失比常规电除尘器约高30%;横向双极电除尘器的伏安特性优于...为了提高现有电除尘器的除尘效果,提出一种横向双极电除尘器,将其与常规电除尘器在相同条件下进行伏安特性、压力损失、除尘效率性能对比。结果表明:横向双极电除尘器的压力损失比常规电除尘器约高30%;横向双极电除尘器的伏安特性优于普通电除尘器;在平均场强2.1~3.2 k V/cm,平均风速1.0~1.5 m/s的范围内,常温常压下,对中位径为25.405μm的烧结粉尘的除尘效率,横向双极电除尘器与常规电除尘器相比有显著提高,并且随着电场平均风速的提高,横向双极电除尘器的优势更加明显。展开更多
Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28...Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28-nm technology and 0.2-lm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.展开更多
Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus...Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor （PMOS） and an N metal-oxide semiconductor （NMOS） are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will irlcrease as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.展开更多
A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector lo...A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.展开更多
The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range of 200 to 420 K.Device simulation results show that the charge sharing collection increases by 66...The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range of 200 to 420 K.Device simulation results show that the charge sharing collection increases by 66%-325% when the temperature rises.The LETth of a MBU in two SRAM cells and one DICE cell is also quantified.Besides charge sharing, the circuit response＇s temperature dependence also has a significant influence on the LETth.展开更多
A floating conductor exhibits a bipolar corona phenomenon with microscopic discharge characteristics that are still unclear.In this study,a plasma simulation model of the bipolar corona with 108 chemical reaction equa...A floating conductor exhibits a bipolar corona phenomenon with microscopic discharge characteristics that are still unclear.In this study,a plasma simulation model of the bipolar corona with 108 chemical reaction equations is established by combining hydrodynamics and plasma chemical reactions.The evolution characteristics of electrons,positive ions,negative ions and neutral particles,as well as the distribution characteristics of space charges are analyzed,and the evolutionary flow of microscopic particles is summarized.The results indicate that the positive end of the bipolar corona initiates discharge before the negative end,but the plasma chemistry at the negative end is more vigorous.The electron generation rate can reach 1240 mol(m^(3) s)^(-1),and the dissipation rate can reach 34 mol(m^(3) s)^(-1).The positive ion swarm is dominated by O_(4)^(+),and the maximum generation rate can reach 440 mol((m^(3) s)^(-1).The negative ion swarm is mainly O_(2) and O_(4).The O_(2) content is approximately 1.5-3 times that of O_(4),and the maximum reaction rate can reach 51 mol(m^(3) s)^(-1).The final destination of neutral particles is an accumulation in the form of O_(3) and NO,and the amount of O3 produced is approximately 4-6 times that of NO.The positive end of the bipolar corona is dominated by positive space charges,which continue to develop and spread outwards in the form of a pulse wave.The negative end exhibits a space charge distribution structure of concentrated positive charges and diffused negative charges.The validity of the microscopic simulation analysis is verified by the macroscopic discharge phenomenon.展开更多
Charge transport in suspended monolayer graphene is simulated by a numerical deterministic approach,based on a discontinuous Galerkin(DG)method,for solving the semiclassical Boltzmann equation for electrons.Both the c...Charge transport in suspended monolayer graphene is simulated by a numerical deterministic approach,based on a discontinuous Galerkin(DG)method,for solving the semiclassical Boltzmann equation for electrons.Both the conduction and valence bands are included and the interband scatterings are taken into account.The use of a Direct Simulation Monte Carlo(DSMC)approach,which properly describes the interband scatterings,is computationally very expensive because the va-lence band is very populated and a huge number of particles is needed.Also the choice of simulating holes instead of electrons does not overcome the problem because there is a certain degree of ambiguity in the generation and recombination terms of electron-hole pairs.Often,direct solutions of the Boltzmann equations with a DSMC neglect the interband scatterings on the basis of physical arguments.The DG approach does not suffer from the previous drawbacks and requires a reasonable computing effort.In the present paper the importance of the interband scatterings is accurately evaluated for several values of the Fermi energy,addressing the issue related to the validity of neglecting the generation-recombination terms.It is found out that the inclusion of the interband scatterings produces huge variations in the average values,as the current,with zero Fermi energy while,as expected,the effect of the interband scattering becomes negligible by increasing the absolute value of the Fermi energy.展开更多
Graphene nanoribbons are considered as one of the most promising ways to design electron devices where the active area is made of graphene.In fact,graphene nanoribbons present a gap between the valence and the conduct...Graphene nanoribbons are considered as one of the most promising ways to design electron devices where the active area is made of graphene.In fact,graphene nanoribbons present a gap between the valence and the conduction bands as in standard semiconductors such as Si or GaAs,at variancewith large area graphenewhich is gapless,a feature that hampers a good performance of graphene field effect transistors.To use graphene nanoribbons as a semiconductor,an accurate analysis of their electron properties is needed.Here,electron transport in graphene nanoribbons is investigated by solving the semiclassical Boltzmann equation with a discontinuous Galerkin method.All the electron-phonon scattering mechanisms are included.The adopted energy band structure is that devised in[1]while according to[2]the edge effects are described as an additional scattering stemming from the Berry-Mondragon model which is valid in presence of edge disorder.With this approach a spacial 1D transport problem has been solved,even if it remains two dimensional in the wavevector space.A degradation of charge velocities,and consequently of the mobilities,is found by reducing the nanoribbon width due mainly to the edge scattering.展开更多
文摘为了提高现有电除尘器的除尘效果,提出一种横向双极电除尘器,将其与常规电除尘器在相同条件下进行伏安特性、压力损失、除尘效率性能对比。结果表明:横向双极电除尘器的压力损失比常规电除尘器约高30%;横向双极电除尘器的伏安特性优于普通电除尘器;在平均场强2.1~3.2 k V/cm,平均风速1.0~1.5 m/s的范围内,常温常压下,对中位径为25.405μm的烧结粉尘的除尘效率,横向双极电除尘器与常规电除尘器相比有显著提高,并且随着电场平均风速的提高,横向双极电除尘器的优势更加明显。
基金supported by the National Natural Science Foundation of China(Nos.61434007 and 61376109)
文摘Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28-nm technology and 0.2-lm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.
基金Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004)the National Natural Science Foundation of China (Grant Nos. 61076025 and 61006070)
文摘Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor （PMOS） and an N metal-oxide semiconductor （NMOS） are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will irlcrease as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60976013)
文摘A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.
基金supported by the National Natural Science Foundation of China (No. 60836009)the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20079998015)
文摘The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range of 200 to 420 K.Device simulation results show that the charge sharing collection increases by 66%-325% when the temperature rises.The LETth of a MBU in two SRAM cells and one DICE cell is also quantified.Besides charge sharing, the circuit response＇s temperature dependence also has a significant influence on the LETth.
基金supported by the Aeronautical Science Foundation of China(No.201944057001)the National Key Research and Development Program of China(No.2017YFC1501506).
文摘A floating conductor exhibits a bipolar corona phenomenon with microscopic discharge characteristics that are still unclear.In this study,a plasma simulation model of the bipolar corona with 108 chemical reaction equations is established by combining hydrodynamics and plasma chemical reactions.The evolution characteristics of electrons,positive ions,negative ions and neutral particles,as well as the distribution characteristics of space charges are analyzed,and the evolutionary flow of microscopic particles is summarized.The results indicate that the positive end of the bipolar corona initiates discharge before the negative end,but the plasma chemistry at the negative end is more vigorous.The electron generation rate can reach 1240 mol(m^(3) s)^(-1),and the dissipation rate can reach 34 mol(m^(3) s)^(-1).The positive ion swarm is dominated by O_(4)^(+),and the maximum generation rate can reach 440 mol((m^(3) s)^(-1).The negative ion swarm is mainly O_(2) and O_(4).The O_(2) content is approximately 1.5-3 times that of O_(4),and the maximum reaction rate can reach 51 mol(m^(3) s)^(-1).The final destination of neutral particles is an accumulation in the form of O_(3) and NO,and the amount of O3 produced is approximately 4-6 times that of NO.The positive end of the bipolar corona is dominated by positive space charges,which continue to develop and spread outwards in the form of a pulse wave.The negative end exhibits a space charge distribution structure of concentrated positive charges and diffused negative charges.The validity of the microscopic simulation analysis is verified by the macroscopic discharge phenomenon.
文摘Charge transport in suspended monolayer graphene is simulated by a numerical deterministic approach,based on a discontinuous Galerkin(DG)method,for solving the semiclassical Boltzmann equation for electrons.Both the conduction and valence bands are included and the interband scatterings are taken into account.The use of a Direct Simulation Monte Carlo(DSMC)approach,which properly describes the interband scatterings,is computationally very expensive because the va-lence band is very populated and a huge number of particles is needed.Also the choice of simulating holes instead of electrons does not overcome the problem because there is a certain degree of ambiguity in the generation and recombination terms of electron-hole pairs.Often,direct solutions of the Boltzmann equations with a DSMC neglect the interband scatterings on the basis of physical arguments.The DG approach does not suffer from the previous drawbacks and requires a reasonable computing effort.In the present paper the importance of the interband scatterings is accurately evaluated for several values of the Fermi energy,addressing the issue related to the validity of neglecting the generation-recombination terms.It is found out that the inclusion of the interband scatterings produces huge variations in the average values,as the current,with zero Fermi energy while,as expected,the effect of the interband scattering becomes negligible by increasing the absolute value of the Fermi energy.
基金the support from INdAM(GNFM)and from Universita degli Studi di Catania,Piano della Ricerca 2020/2022 Linea di intervento 2“QICT”the financial support from the project AIM,Mobilita dei Ricercatori Asse I del PON R&I 2014-2020,proposta AIM1893589the financial support from Progetto Giovani GNFM 2020“Trasporto di cariche e fononi in strutture a bassa dimensione”.
文摘Graphene nanoribbons are considered as one of the most promising ways to design electron devices where the active area is made of graphene.In fact,graphene nanoribbons present a gap between the valence and the conduction bands as in standard semiconductors such as Si or GaAs,at variancewith large area graphenewhich is gapless,a feature that hampers a good performance of graphene field effect transistors.To use graphene nanoribbons as a semiconductor,an accurate analysis of their electron properties is needed.Here,electron transport in graphene nanoribbons is investigated by solving the semiclassical Boltzmann equation with a discontinuous Galerkin method.All the electron-phonon scattering mechanisms are included.The adopted energy band structure is that devised in[1]while according to[2]the edge effects are described as an additional scattering stemming from the Berry-Mondragon model which is valid in presence of edge disorder.With this approach a spacial 1D transport problem has been solved,even if it remains two dimensional in the wavevector space.A degradation of charge velocities,and consequently of the mobilities,is found by reducing the nanoribbon width due mainly to the edge scattering.
