An atomic layer deposition （ALD） method has been employed to synthesize Fe3O4/graphene and Ni/graphene composites. The structure and microwave absorbing properties of the as-prepared composites are investigated. The...An atomic layer deposition （ALD） method has been employed to synthesize Fe3O4/graphene and Ni/graphene composites. The structure and microwave absorbing properties of the as-prepared composites are investigated. The surfaces of graphene are densely covered by Fe3O4 or Ni nanoparticles with a narrow size distribution, and the magnetic nanoparticles are well distributed on each graphene sheet without significant conglomeration or large vacancies. The coated graphene materials exhibit remarkably improved electromagnetic （EM） absorption properties compared to the pristine graphene. The optimal reflection loss （RL） reaches -46.4 dB at 15.6 GHz with a thickness of only 1.4 mm for the Fe3O4/graphene composites obtained by applying 100 cycles of Fe2O3 deposition followed by a hydrogen reduction. The enhanced absorption ability arises from the effective impedance matching, multiple interfacial polarization and increased magnetic loss from the added magnetic constituents. Moreover, compared with other recently reported materials, the composites have a lower filling ratio and smaller coating thickness resulting in significantly increased EM absorption properties. This demonstrates that nanoscale surface modification of magnetic particles on graphene by ALD is a very promising way to design lightweight and high-efficiency microwave absorbers.展开更多
In this work, atomic layer deposition （ALD） was employed to fabricate coaxial multi-interface hollow Ni-A12OB-ZnO nanowires. The morpholog34 microstructure, and ZnO shell thickness dependent electromagnetic and micr...In this work, atomic layer deposition （ALD） was employed to fabricate coaxial multi-interface hollow Ni-A12OB-ZnO nanowires. The morpholog34 microstructure, and ZnO shell thickness dependent electromagnetic and microwave absorbing properties of these Ni-A12OB-ZnO nanowires were characterized. Excellent microwave absorbing properties with a minimum reflection loss （RL） of approximately -50 dB at 9.44 GHz were found for the Ni-A12OB-100ZnO nanowires, which was 10 times of Ni-A1203 nanowires. The microwave absorption frequency could be effectively varied by simply adjusting the number of ZnO deposition cycles. The absorption peaks of Ni-A1203-100ZnO and Ni-A12OB-150ZnO nanowires shifted of 5.5 and 6.8 GHz towards lower frequencies, respectively, occupying one third of the investigated frequency band. The enhanced microwave absorption arose from multiple loss mechanisms caused by the unique coaxial multi-interface structure, such as multi-interfacial polarization relaxation, natural and exchange resonances, as well as multiple internal reflections and scattering. These results demonstrate that the ALD method can be used to realize tailored nanoscale structures, making it a highly promising method for obtaining high- efficiency microwave absorbers, and opening a potentially novel route for frecluencv adiustment and microwave ima^in~ fields.展开更多
Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compos...Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and processes.Unfortunately,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory devices.Conventional approaches have limited process flexibility and poor conformality on structured surfaces.Atomic layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film deposition.Accordingly,studies on ALD based oxide semiconductors have dramatically increased recently.Even so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to applications.In this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications.This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors.展开更多
In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-r...In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grownβ-Ga_(2)O_(3)thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and investigated.The PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7×10^(6),and ultra-high detectivity of 4.25×10^(14)Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1000 times and 100 times,respectively.In addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67×10^(4)%,and also exhibit robustness and repeatability,which indicate excellent performance.Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.展开更多
This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film quality.Schottky diode devices are fabricate...This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film quality.Schottky diode devices are fabricated based on the grown Ga_(2)O_(3)films,and the effects of annealing temperature,electrode size,and electrode spacing on the electrical characteristics of the devices are studied.The results show that as the film thickness increases,the breakdown voltage of the fabricated devices also increases.A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 V.The film quality significantly improves as the annealing temperature of the film increases.At a voltage of 5 V,the current of the film annealed at 900℃is 64 times that of the film annealed at 700℃.The optimum annealing temperature for Ohmic contact electrodes is 450℃.At 550℃,the Ohmic contact metal tends to burn,and the performance of the device is reduced.Reducing the electrode spacing increases the forward current of the device but decreases the reverse breakdown voltage.Increasing the Schottky contact electrode size increases the forward current,but the change is not significant,and there is no significant change in the reverse breakdown voltage.The device also performs well at high temperatures,with a reverse breakdown voltage of 220 V at 125℃.展开更多
Currently,there has an ever-growing interest in layered LiNi_(x)Mn_(y)Co_(z)O_(2)(NMCs,x+y+z=1)cathode materials for lithium-ion batteries(LIBs)and lithium metal batteries(LMBs),due to their low cost and high capacity...Currently,there has an ever-growing interest in layered LiNi_(x)Mn_(y)Co_(z)O_(2)(NMCs,x+y+z=1)cathode materials for lithium-ion batteries(LIBs)and lithium metal batteries(LMBs),due to their low cost and high capacity.However,they still suffer from a series of issues,such as Li/Ni cation mixing,irreversible phase transition,and transition metal dissolution.These issues result in severe capacity degradation and limited cyclability of NMCs.Recently,atomic and molecular layer deposition(ALD and MLD)have emerged as a novel tool to tackle these issues,featuring their unique capabilities to fine-tailor NMCs'surfaces for stable interfaces and improved electrochemical performance in LIBs and LMBs.In this review,we specially summarize the recent advances of different ALD and MLD coatings on NMCs and discuss their working mechanisms.We expect that this review will stimulate more efforts to further develop better NMCs using novel ALD/MLD coatings.展开更多
Nanocellulose is a sustainable and eco-friendly nanomaterial derived from renewable biomass. In this study, we utilized the structural advantages of two types of nanocellulose and fabricated freestanding carbonized hy...Nanocellulose is a sustainable and eco-friendly nanomaterial derived from renewable biomass. In this study, we utilized the structural advantages of two types of nanocellulose and fabricated freestanding carbonized hybrid nanocellulose films as electrode materials for supercapacitors. The long cellulose nanofibrils （CNFs） formed a macroporous framework, and the short cellulose nanocrystals were assembled around the CNF framework and generated micro/mesopores. This two-level hierarchical porous structure was successfully preserved during carbonization because of a thin atomic layer deposited （ALD） A1203 conformal coating, which effectively prevented the aggregation of nanocellulose. These carbonized, partially graphitized nanocellulose fibers were interconnected, forming an integrated and highly conductive network with a large specific surface area of 1,244 m2·g-1. The two-level hierarchical porous structure facilitated fast ion transport in the film. When tested as an electrode material with a high mass loading of 4 mg·cm-2 for supercapacitors, the hierarchical porous carbon film derived from hybrid nanocellulose exhibited a specific capacitance of 170 F·g-1 and extraordinary performance at high current densities. Even at a very high current of 50 A-g-l, it retained 65% of its original specific capacitance, which makes it a promising electrode material for high-power applications.展开更多
The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the...The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition （ALD） and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide （Al2O3） is used to fabricate the nanostep. There are three steps of Al2O3 in this structure including 8 nm, 18 nm and 44 inn. The thickness of Al2O3 film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al2O3 film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikaliseh-Technische Bundesanstalt （PTB） and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references.展开更多
文摘An atomic layer deposition （ALD） method has been employed to synthesize Fe3O4/graphene and Ni/graphene composites. The structure and microwave absorbing properties of the as-prepared composites are investigated. The surfaces of graphene are densely covered by Fe3O4 or Ni nanoparticles with a narrow size distribution, and the magnetic nanoparticles are well distributed on each graphene sheet without significant conglomeration or large vacancies. The coated graphene materials exhibit remarkably improved electromagnetic （EM） absorption properties compared to the pristine graphene. The optimal reflection loss （RL） reaches -46.4 dB at 15.6 GHz with a thickness of only 1.4 mm for the Fe3O4/graphene composites obtained by applying 100 cycles of Fe2O3 deposition followed by a hydrogen reduction. The enhanced absorption ability arises from the effective impedance matching, multiple interfacial polarization and increased magnetic loss from the added magnetic constituents. Moreover, compared with other recently reported materials, the composites have a lower filling ratio and smaller coating thickness resulting in significantly increased EM absorption properties. This demonstrates that nanoscale surface modification of magnetic particles on graphene by ALD is a very promising way to design lightweight and high-efficiency microwave absorbers.
文摘In this work, atomic layer deposition （ALD） was employed to fabricate coaxial multi-interface hollow Ni-A12OB-ZnO nanowires. The morpholog34 microstructure, and ZnO shell thickness dependent electromagnetic and microwave absorbing properties of these Ni-A12OB-ZnO nanowires were characterized. Excellent microwave absorbing properties with a minimum reflection loss （RL） of approximately -50 dB at 9.44 GHz were found for the Ni-A12OB-100ZnO nanowires, which was 10 times of Ni-A1203 nanowires. The microwave absorption frequency could be effectively varied by simply adjusting the number of ZnO deposition cycles. The absorption peaks of Ni-A1203-100ZnO and Ni-A12OB-150ZnO nanowires shifted of 5.5 and 6.8 GHz towards lower frequencies, respectively, occupying one third of the investigated frequency band. The enhanced microwave absorption arose from multiple loss mechanisms caused by the unique coaxial multi-interface structure, such as multi-interfacial polarization relaxation, natural and exchange resonances, as well as multiple internal reflections and scattering. These results demonstrate that the ALD method can be used to realize tailored nanoscale structures, making it a highly promising method for obtaining high- efficiency microwave absorbers, and opening a potentially novel route for frecluencv adiustment and microwave ima^in~ fields.
基金supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2020M3H4A3081867)the industry technology R&D program (20006400) funded by the Ministry of Trade,Industry and Energy (MOTIE, Korea)+2 种基金the project number 20010402 funded by the Ministry of Trade,Industry and Energy (MOTIE, Korea)the Industry Technology R&D program (#20010371) funded by the Ministry of Trade,Industry and Energy (MOTIE, Republic of Korea)the Technology Innovation Program (20017382) funded By the Ministryof Trade,Industry and Energy (MOTIE, Korea)
文摘Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and processes.Unfortunately,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory devices.Conventional approaches have limited process flexibility and poor conformality on structured surfaces.Atomic layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film deposition.Accordingly,studies on ALD based oxide semiconductors have dramatically increased recently.Even so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to applications.In this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications.This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors.
基金the Natural Science Basic Research Program in Shaanxi Province of China(2023-JC-YB-574)the National Natural Science Foundation of China(62304178)。
文摘In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grownβ-Ga_(2)O_(3)thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and investigated.The PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7×10^(6),and ultra-high detectivity of 4.25×10^(14)Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1000 times and 100 times,respectively.In addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67×10^(4)%,and also exhibit robustness and repeatability,which indicate excellent performance.Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.
基金the Natural Science Basic Research Program in Shaanxi Province of China(2023-JC-YB-574)the National Natural Science Foundation of China(62204203)。
文摘This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film quality.Schottky diode devices are fabricated based on the grown Ga_(2)O_(3)films,and the effects of annealing temperature,electrode size,and electrode spacing on the electrical characteristics of the devices are studied.The results show that as the film thickness increases,the breakdown voltage of the fabricated devices also increases.A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 V.The film quality significantly improves as the annealing temperature of the film increases.At a voltage of 5 V,the current of the film annealed at 900℃is 64 times that of the film annealed at 700℃.The optimum annealing temperature for Ohmic contact electrodes is 450℃.At 550℃,the Ohmic contact metal tends to burn,and the performance of the device is reduced.Reducing the electrode spacing increases the forward current of the device but decreases the reverse breakdown voltage.Increasing the Schottky contact electrode size increases the forward current,but the change is not significant,and there is no significant change in the reverse breakdown voltage.The device also performs well at high temperatures,with a reverse breakdown voltage of 220 V at 125℃.
基金partial support from the National Science Foundation(No.2132578)the financial research support of the Chancellor's Fund from the University of Arkansas,Fayetteville,AR,USA。
文摘Currently,there has an ever-growing interest in layered LiNi_(x)Mn_(y)Co_(z)O_(2)(NMCs,x+y+z=1)cathode materials for lithium-ion batteries(LIBs)and lithium metal batteries(LMBs),due to their low cost and high capacity.However,they still suffer from a series of issues,such as Li/Ni cation mixing,irreversible phase transition,and transition metal dissolution.These issues result in severe capacity degradation and limited cyclability of NMCs.Recently,atomic and molecular layer deposition(ALD and MLD)have emerged as a novel tool to tackle these issues,featuring their unique capabilities to fine-tailor NMCs'surfaces for stable interfaces and improved electrochemical performance in LIBs and LMBs.In this review,we specially summarize the recent advances of different ALD and MLD coatings on NMCs and discuss their working mechanisms.We expect that this review will stimulate more efforts to further develop better NMCs using novel ALD/MLD coatings.
基金National Ministry of Science and Technology“13thFive-Year”Key Research and Development Program Sub Project for High Performance Computing(2016YFB0200205)2018 Shanghai Public R&D Service Center Construction Project(18DZ2295400)
文摘Nanocellulose is a sustainable and eco-friendly nanomaterial derived from renewable biomass. In this study, we utilized the structural advantages of two types of nanocellulose and fabricated freestanding carbonized hybrid nanocellulose films as electrode materials for supercapacitors. The long cellulose nanofibrils （CNFs） formed a macroporous framework, and the short cellulose nanocrystals were assembled around the CNF framework and generated micro/mesopores. This two-level hierarchical porous structure was successfully preserved during carbonization because of a thin atomic layer deposited （ALD） A1203 conformal coating, which effectively prevented the aggregation of nanocellulose. These carbonized, partially graphitized nanocellulose fibers were interconnected, forming an integrated and highly conductive network with a large specific surface area of 1,244 m2·g-1. The two-level hierarchical porous structure facilitated fast ion transport in the film. When tested as an electrode material with a high mass loading of 4 mg·cm-2 for supercapacitors, the hierarchical porous carbon film derived from hybrid nanocellulose exhibited a specific capacitance of 170 F·g-1 and extraordinary performance at high current densities. Even at a very high current of 50 A-g-l, it retained 65% of its original specific capacitance, which makes it a promising electrode material for high-power applications.
基金Supported by National Natural Science Foundation of China(Grant No.51175418)Major Research Program on Nanomanufacturing of National Natural Science Foundation of China(Grant No.91323303)+1 种基金Fund of the State Key Laboratory of Precision Measuring Technology and Instruments(Tianjin University and Tsinghua University)of China(Grant No.PIL1403)Collaborative Innovation Center of Suzhou Nano Science and Technology of China
文摘The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition （ALD） and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide （Al2O3） is used to fabricate the nanostep. There are three steps of Al2O3 in this structure including 8 nm, 18 nm and 44 inn. The thickness of Al2O3 film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al2O3 film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikaliseh-Technische Bundesanstalt （PTB） and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references.
