A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480...A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al2O3, which was formed at the early stage of annealing.展开更多
A technique to improve and accelerate aluminum induced crystallization（AIC） by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hy...A technique to improve and accelerate aluminum induced crystallization（AIC） by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC.This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm^2/（V·s）.The possible mechanism of AIC assisted by hydrogen radicals is also discussed.展开更多
A novel way of producing superhydrophobic surfaces by applying a self-assembled monolayer(SAM)to silicon micro/nano-textured surfaces is presented in this paper.The micro/nano-textured surfaces on silicon substrates w...A novel way of producing superhydrophobic surfaces by applying a self-assembled monolayer(SAM)to silicon micro/nano-textured surfaces is presented in this paper.The micro/nano-textured surfaces on silicon substrates were generated by the aluminum-induced crystallization(AIC)of amorphous silicon(a-Si)technique.Octadecyltrichlorosilane(OTS)SAMs were then applied to the textured surfaces by dip coating.The topography and wetting properties of the resulting surfaces were characterized using scanning electron microscopy(SEM)and a video-based contact angle measurement system.The results show that by introducing OTS SAMs on the silicon micro/nano-textured surfaces,superhydrophobic surfaces with water contact angles(WCAs)of 155°were obtained,as compared to the WCAs of OTS-modified smooth silicon surfaces of about 112°.Surface topography was found to directly influence the WCA as predicted by the Cassie-Baxter model.展开更多
采用金属铝诱导晶化非晶硅薄膜的方法制备多晶硅薄膜。研究了不同的退火温度对a-S i薄膜晶化的影响,采用XRD,R am an,SEM等测试手段分析了实验结果。实验结果发现非晶硅薄膜在400℃下退火20 m in薄膜仍为非晶结构(a-S i),在450℃下退火2...采用金属铝诱导晶化非晶硅薄膜的方法制备多晶硅薄膜。研究了不同的退火温度对a-S i薄膜晶化的影响,采用XRD,R am an,SEM等测试手段分析了实验结果。实验结果发现非晶硅薄膜在400℃下退火20 m in薄膜仍为非晶结构(a-S i),在450℃下退火20 m in后非晶硅开始晶化且随着温度的升高,且晶化程度加强。展开更多
应用晶化非晶硅(a-Si)薄膜铝诱导方法,采用X射线衍射(X-ray diffraction,XRD)、光学显微镜(Optical Microscopy,OM)和原子力显微镜(Atomic Force Microscopy,AFM)等测试手段,研究了退火条件对样品晶化的影响.结果表明,样品在300℃下退...应用晶化非晶硅(a-Si)薄膜铝诱导方法,采用X射线衍射(X-ray diffraction,XRD)、光学显微镜(Optical Microscopy,OM)和原子力显微镜(Atomic Force Microscopy,AFM)等测试手段,研究了退火条件对样品晶化的影响.结果表明,样品在300℃下退火后仍为非晶态;退火温度为400℃时,样品开始晶化.随着退火时间的增加,薄膜晶化程度越来越高,晶粒越来越大,同时薄膜表面粗糙度增加.展开更多
基金supported by the National Basic Research Program of China ("973" Project) (Grant No 2010CB933803)the National Natural Science Foundation of China (Grant No 2102042)the Visiting Scholar Foundation of State Key Lab of Silicon Materials, Zhejiang Uni-versity ( Grant No SKL 2009-12)
文摘A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al2O3, which was formed at the early stage of annealing.
基金supported by the National Natural Science Foundation of China(No.61076006)the National High Technology Research and Development Program of China(No.2008AA03A335)
文摘A technique to improve and accelerate aluminum induced crystallization（AIC） by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC.This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm^2/（V·s）.The possible mechanism of AIC assisted by hydrogen radicals is also discussed.
基金This material is based on work supported by the US National Science Foundation under Grant Nos.CMMI-0600642 and CMMI-0645040.
文摘A novel way of producing superhydrophobic surfaces by applying a self-assembled monolayer(SAM)to silicon micro/nano-textured surfaces is presented in this paper.The micro/nano-textured surfaces on silicon substrates were generated by the aluminum-induced crystallization(AIC)of amorphous silicon(a-Si)technique.Octadecyltrichlorosilane(OTS)SAMs were then applied to the textured surfaces by dip coating.The topography and wetting properties of the resulting surfaces were characterized using scanning electron microscopy(SEM)and a video-based contact angle measurement system.The results show that by introducing OTS SAMs on the silicon micro/nano-textured surfaces,superhydrophobic surfaces with water contact angles(WCAs)of 155°were obtained,as compared to the WCAs of OTS-modified smooth silicon surfaces of about 112°.Surface topography was found to directly influence the WCA as predicted by the Cassie-Baxter model.
文摘采用金属铝诱导晶化非晶硅薄膜的方法制备多晶硅薄膜。研究了不同的退火温度对a-S i薄膜晶化的影响,采用XRD,R am an,SEM等测试手段分析了实验结果。实验结果发现非晶硅薄膜在400℃下退火20 m in薄膜仍为非晶结构(a-S i),在450℃下退火20 m in后非晶硅开始晶化且随着温度的升高,且晶化程度加强。
文摘应用晶化非晶硅(a-Si)薄膜铝诱导方法,采用X射线衍射(X-ray diffraction,XRD)、光学显微镜(Optical Microscopy,OM)和原子力显微镜(Atomic Force Microscopy,AFM)等测试手段,研究了退火条件对样品晶化的影响.结果表明,样品在300℃下退火后仍为非晶态;退火温度为400℃时,样品开始晶化.随着退火时间的增加,薄膜晶化程度越来越高,晶粒越来越大,同时薄膜表面粗糙度增加.
