BACKGROUND Ulcerative colitis is a chronic inflammatory disease of the colon with an unknown etiology.Alkaline sphingomyelinase(alk-SMase)is specifically expressed by intestinal epithelial cells,and has been reported ...BACKGROUND Ulcerative colitis is a chronic inflammatory disease of the colon with an unknown etiology.Alkaline sphingomyelinase(alk-SMase)is specifically expressed by intestinal epithelial cells,and has been reported to play an anti-inflammatory role.However,the underlying mechanism is still unclear.AIM To explore the mechanism of alk-SMase anti-inflammatory effects on intestinal barrier function and oxidative stress in dextran sulfate sodium(DSS)-induced colitis.METHODS Mice were administered 3%DSS drinking water,and disease activity index was determined to evaluate the status of colitis.Intestinal permeability was evaluated by gavage administration of fluorescein isothiocyanate dextran,and bacterial translocation was evaluated by measuring serum lipopolysaccharide.Intestinal epithelial cell ultrastructure was observed by electron microscopy.Western blotting and quantitative real-time reverse transcription-polymerase chain reaction were used to detect the expression of intestinal barrier proteins and mRNA,respectively.Serum oxidant and antioxidant marker levels were analyzed using commercial kits to assess oxidative stress levels.RESULTS Compared to wild-type(WT)mice,inflammation and intestinal permeability in alk-SMase knockout(KO)mice were more severe beginning 4 d after DSS induction.The mRNA and protein levels of intestinal barrier proteins,including zonula occludens-1,occludin,claudin-3,claudin-5,claudin-8,mucin 2,and secretory immunoglobulin A,were significantly reduced on 4 d after DSS treatment.Ultrastructural observations revealed progressive damage to the tight junctions of intestinal epithelial cells.Furthermore,by day 4,mitochondria appeared swollen and degenerated.Additionally,compared to WT mice,serum malondialdehyde levels in KO mice were higher,and the antioxidant capacity was significantly lower.The expression of the transcription factor nuclear factor erythroid 2-related factor 2(Nrf2)in the colonic mucosal tissue of KO mice was significantly decreased after DSS treatment.mRNA levels of Nrf2-re展开更多
We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal ...We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CME展开更多
We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier s...We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.展开更多
The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acid...The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole（BTA）,by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.展开更多
The surface roughness seriously affects the performance of devices after barrier CMP. Due to the high surface roughness of copper line, the local resistance of a device will be high when working, then the copper line ...The surface roughness seriously affects the performance of devices after barrier CMP. Due to the high surface roughness of copper line, the local resistance of a device will be high when working, then the copper line will overheat prompting the generation of electro-migration and the circuit will lose efficacy. Reducing the surface roughness of the copper line in barrier CMP is still an important research topic. The main factors influencing the surface roughness of copper line in alkaline barrier slurry are analyzed in the paper. Aimed at influencing the law on the surface roughness of copper line, using a new type of alkaline barrier slurry with a different p H of the chelating agent and changing the content of non-ionic surfactant, we then analyze the influencing law both on the surface roughness of copper line, and the influence mechanism. The experimental results show that with a chelating agent with a low p H value in the barrier slurry, the surface roughness of the copper line is 1.03 nm and it is the lowest in all of the barrier slurries, and with the increase of non-ionic surfactant concentration, the surface roughness of copper line is reduced to 0.43 nm, meeting the demand of further development of integrated circuits.展开更多
Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barr...Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this study, we developed a new benzotriazole-free barrier slurry named FA/O barrier slurry, containing 20 mL/L of the chelating agent FA/O, 5 mL/L surfactant, and a 1：5 concentration of abrasive particles. By controlling the polishing slurry ingredients, the removal rate of different materials could be controlled. For process integration considerations, the effect of the FA/O barrier slurry on the dielectric layer of the patterned Cu wafer was investigated. After CMP processing by the FA/O barrier slurry, the characteristics of the dielectric material were tested. The results showed that the dielectric characteristics met demands for industrial production. The current leakage was of pA scale. The resistance and capacitance were 2.4 k and 2.3 pF, respectively. The dishing and erosion defects were both below 30 nm in size. CMP-processed wafers using this barrier slurry could meet industrial production demands.展开更多
基金the Natural Science Foundation of Hainan Province,No.823MS046the Talent Program of Hainan Medical University,No.XRC2022007.
文摘BACKGROUND Ulcerative colitis is a chronic inflammatory disease of the colon with an unknown etiology.Alkaline sphingomyelinase(alk-SMase)is specifically expressed by intestinal epithelial cells,and has been reported to play an anti-inflammatory role.However,the underlying mechanism is still unclear.AIM To explore the mechanism of alk-SMase anti-inflammatory effects on intestinal barrier function and oxidative stress in dextran sulfate sodium(DSS)-induced colitis.METHODS Mice were administered 3%DSS drinking water,and disease activity index was determined to evaluate the status of colitis.Intestinal permeability was evaluated by gavage administration of fluorescein isothiocyanate dextran,and bacterial translocation was evaluated by measuring serum lipopolysaccharide.Intestinal epithelial cell ultrastructure was observed by electron microscopy.Western blotting and quantitative real-time reverse transcription-polymerase chain reaction were used to detect the expression of intestinal barrier proteins and mRNA,respectively.Serum oxidant and antioxidant marker levels were analyzed using commercial kits to assess oxidative stress levels.RESULTS Compared to wild-type(WT)mice,inflammation and intestinal permeability in alk-SMase knockout(KO)mice were more severe beginning 4 d after DSS induction.The mRNA and protein levels of intestinal barrier proteins,including zonula occludens-1,occludin,claudin-3,claudin-5,claudin-8,mucin 2,and secretory immunoglobulin A,were significantly reduced on 4 d after DSS treatment.Ultrastructural observations revealed progressive damage to the tight junctions of intestinal epithelial cells.Furthermore,by day 4,mitochondria appeared swollen and degenerated.Additionally,compared to WT mice,serum malondialdehyde levels in KO mice were higher,and the antioxidant capacity was significantly lower.The expression of the transcription factor nuclear factor erythroid 2-related factor 2(Nrf2)in the colonic mucosal tissue of KO mice was significantly decreased after DSS treatment.mRNA levels of Nrf2-re
基金Project supported by the Natural Science Foundation of Hebei Province,China(No.E2013202247)the Department of Education Fund of Hebei Province,China(No.2011128)
文摘We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CME
基金Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308)the National Natural Science Foundation of China(No.10676008)+1 种基金the Tianjin Natural Science Foundation of China(No.10JCZDJC15500)the Fund Project of Hebei Provincial Department of Education,China(No.2011128)
文摘We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.
基金supported by the Special Project Items No.2 in National Long-term Technology Development Plan,China(No.2009ZX02308)
文摘The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole（BTA）,by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.
文摘The surface roughness seriously affects the performance of devices after barrier CMP. Due to the high surface roughness of copper line, the local resistance of a device will be high when working, then the copper line will overheat prompting the generation of electro-migration and the circuit will lose efficacy. Reducing the surface roughness of the copper line in barrier CMP is still an important research topic. The main factors influencing the surface roughness of copper line in alkaline barrier slurry are analyzed in the paper. Aimed at influencing the law on the surface roughness of copper line, using a new type of alkaline barrier slurry with a different p H of the chelating agent and changing the content of non-ionic surfactant, we then analyze the influencing law both on the surface roughness of copper line, and the influence mechanism. The experimental results show that with a chelating agent with a low p H value in the barrier slurry, the surface roughness of the copper line is 1.03 nm and it is the lowest in all of the barrier slurries, and with the increase of non-ionic surfactant concentration, the surface roughness of copper line is reduced to 0.43 nm, meeting the demand of further development of integrated circuits.
基金supported by the Special Project Items No.2 in National Long-Term Technology Development Plan(No.2009ZX02308)the Natural Science Foundation of Hebei Province(No.F2012202094)the Doctoral Program Foundation of Xinjiang Normal University Plan(No.XJNUBS1226)
文摘Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this study, we developed a new benzotriazole-free barrier slurry named FA/O barrier slurry, containing 20 mL/L of the chelating agent FA/O, 5 mL/L surfactant, and a 1：5 concentration of abrasive particles. By controlling the polishing slurry ingredients, the removal rate of different materials could be controlled. For process integration considerations, the effect of the FA/O barrier slurry on the dielectric layer of the patterned Cu wafer was investigated. After CMP processing by the FA/O barrier slurry, the characteristics of the dielectric material were tested. The results showed that the dielectric characteristics met demands for industrial production. The current leakage was of pA scale. The resistance and capacitance were 2.4 k and 2.3 pF, respectively. The dishing and erosion defects were both below 30 nm in size. CMP-processed wafers using this barrier slurry could meet industrial production demands.
