In this paper, the characterization of single event multiple cell upsets(MCUs) in a custom SRAM is performed in a 65 nm triple-well CMOS technology, and O(linear energy transfer(LET) = 3.1 Me V cm2/mg), Ti(LET = 22.2 ...In this paper, the characterization of single event multiple cell upsets(MCUs) in a custom SRAM is performed in a 65 nm triple-well CMOS technology, and O(linear energy transfer(LET) = 3.1 Me V cm2/mg), Ti(LET = 22.2 Me V cm2/mg) and Ge(LET = 37.4 Me V cm2/mg) particles are employed. The experimental results show that the percentage of MCU events in total upset events is 71.11%, 83.47% and 85.53% at O, Ti and Ge exposures. Moreover, due to the vertical well isolation layout, 100%(O), 100%(Ti) and 98.11%(Ge) MCU cluster just present at one or two adjacent columns, but there are still 4 cell upsets in one MCU cluster appearing on the same word wire. The characterization indicates that MCUs have become the main source of soft errors in SRAM, and even though combining the storage array interleaving distance(ID) scheme with the error detection and correction(EDAC) technique, the MCUs cannot be completely eliminated, new radiation hardened by design techniques still need to be further studied.展开更多
Security in Ad Hoc network is an important issue under the opening circumstance of application service. Some protocols and models of security auditing have been proposed to ensure rationality of contracting strategy a...Security in Ad Hoc network is an important issue under the opening circumstance of application service. Some protocols and models of security auditing have been proposed to ensure rationality of contracting strategy and operating regulation and used to identify abnormal operation. Model of security auditing based on access control of devices will be advanced to register sign of devices and property of event of access control and to audit those actions. In the end, the model is analyzed and simulated.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61504169)the Preliminary Research Program of National University of Defense Technology of China(Grant No.0100066314001)
文摘In this paper, the characterization of single event multiple cell upsets(MCUs) in a custom SRAM is performed in a 65 nm triple-well CMOS technology, and O(linear energy transfer(LET) = 3.1 Me V cm2/mg), Ti(LET = 22.2 Me V cm2/mg) and Ge(LET = 37.4 Me V cm2/mg) particles are employed. The experimental results show that the percentage of MCU events in total upset events is 71.11%, 83.47% and 85.53% at O, Ti and Ge exposures. Moreover, due to the vertical well isolation layout, 100%(O), 100%(Ti) and 98.11%(Ge) MCU cluster just present at one or two adjacent columns, but there are still 4 cell upsets in one MCU cluster appearing on the same word wire. The characterization indicates that MCUs have become the main source of soft errors in SRAM, and even though combining the storage array interleaving distance(ID) scheme with the error detection and correction(EDAC) technique, the MCUs cannot be completely eliminated, new radiation hardened by design techniques still need to be further studied.
文摘Security in Ad Hoc network is an important issue under the opening circumstance of application service. Some protocols and models of security auditing have been proposed to ensure rationality of contracting strategy and operating regulation and used to identify abnormal operation. Model of security auditing based on access control of devices will be advanced to register sign of devices and property of event of access control and to audit those actions. In the end, the model is analyzed and simulated.
