Porous silicon pillar array（PSPA） samples which are ideal substantial materials with dominant electronic and luminescence properties were prepared by surface etching method. ZnO nanorods with or without Mn doping gr...Porous silicon pillar array（PSPA） samples which are ideal substantial materials with dominant electronic and luminescence properties were prepared by surface etching method. ZnO nanorods with or without Mn doping grown uniformly and aligned onto PSPA regardless of lattice matching show various photoluminescence（PL）properties. The doped Mn ions in ZnO nanorods were directly observed by X-ray photoelectron spectroscopy（XPS）,and ZnO structures were detected by X-ray diffraction（XRD）. As the doping concentration increases,XRD peaks of ZnO nanorods shift to low angle. The influences of doping Mn ions on luminescence properties of ZnO nanorods were investigated. Except for the ultraviolet（UV） PL band, the broad PL band is observed at visible region. The band could be divided into three separate bands（orange, green and red） by Lorentzian deconvolution. The intensity of orange PL band firstly increases then decreases, and then gets the maximum at the doping Mn-to-Zn molar ratio of 2.0：100.0 which is the most effective doping concentration. The green PL band is attributed to zinc vacancy of ZnO, the orange PL band to Mn ions recombination of itself, and the red PL band to oxygen vacancy of ZnO, respectively. As the Mn-doped ZnO nanorods could emit yellow green luminescence excited by UV radiation, and doped Mn ions could improve the color rendering index of the luminescence, the nanorods could be used as promising white-light emitters in the future.展开更多
Highly oriented ZnO nanorod arrays were successfully prepared on the indium tin oxide （ITO） substrate using a galvanostatic electrodeposition method. The ITO substrate was pretreated with ZnO nanoparticles via simpl...Highly oriented ZnO nanorod arrays were successfully prepared on the indium tin oxide （ITO） substrate using a galvanostatic electrodeposition method. The ITO substrate was pretreated with ZnO nanoparticles via simple low-temperature solution route. The crystallinity, microstructure of surface, and optical properties of the obtained ZnO were characterized by X-ray diffraction, scanning electron microscope, and transmittance spectrum. The results indicate that the average diameter of ZnO nanorod arrays is about 30 nm, and the narrow size distribution ranges from 20 to 50 nm. The nanorod arrays are growing along wavelength of incident is over 380 nm, the ZnO nanorod arrays growth mechanism of the nanorod arrays was discussed. [001] direction with an orientation perpendicular to the substrate. When the show a high optical transmission of above 95%. Furthermore, the possible展开更多
High density ZnO-nanorod arrays(rod length 1.59μm)were successfully synthesized via a microwave-assisted solution-phase method using zinc chloride and ammonia solution as reactants.The influence of concentration of a...High density ZnO-nanorod arrays(rod length 1.59μm)were successfully synthesized via a microwave-assisted solution-phase method using zinc chloride and ammonia solution as reactants.The influence of concentration of ammonia solution, work power,and microwave irradiation time on the morphology and size of final products was carefully investigated.The crystal structure,chemical composition and morphologies of final products were characterized using X-ray powder diffraction(XRD), scanning electron microscopy(SEM)and photoluminescence(PL).The as-synthesized ZnO is composed of single crystalline and possesses three photoluminescence emissions centered at 400,469 and 534.5 nm,respectively.展开更多
基金financially supported by the National Natural Science Foundation of China (No.11104008)the Beijing Natural Science Foundation (No.4142040)the Fundamental Research Funds for Central Universities of China (No. 212-105560GK)
文摘Porous silicon pillar array（PSPA） samples which are ideal substantial materials with dominant electronic and luminescence properties were prepared by surface etching method. ZnO nanorods with or without Mn doping grown uniformly and aligned onto PSPA regardless of lattice matching show various photoluminescence（PL）properties. The doped Mn ions in ZnO nanorods were directly observed by X-ray photoelectron spectroscopy（XPS）,and ZnO structures were detected by X-ray diffraction（XRD）. As the doping concentration increases,XRD peaks of ZnO nanorods shift to low angle. The influences of doping Mn ions on luminescence properties of ZnO nanorods were investigated. Except for the ultraviolet（UV） PL band, the broad PL band is observed at visible region. The band could be divided into three separate bands（orange, green and red） by Lorentzian deconvolution. The intensity of orange PL band firstly increases then decreases, and then gets the maximum at the doping Mn-to-Zn molar ratio of 2.0：100.0 which is the most effective doping concentration. The green PL band is attributed to zinc vacancy of ZnO, the orange PL band to Mn ions recombination of itself, and the red PL band to oxygen vacancy of ZnO, respectively. As the Mn-doped ZnO nanorods could emit yellow green luminescence excited by UV radiation, and doped Mn ions could improve the color rendering index of the luminescence, the nanorods could be used as promising white-light emitters in the future.
基金the National Natural Science Foundation1 of China (No. 50528404)the National High-Tech Research and Development Program of China (No. 2006AA03Z224)
文摘Highly oriented ZnO nanorod arrays were successfully prepared on the indium tin oxide （ITO） substrate using a galvanostatic electrodeposition method. The ITO substrate was pretreated with ZnO nanoparticles via simple low-temperature solution route. The crystallinity, microstructure of surface, and optical properties of the obtained ZnO were characterized by X-ray diffraction, scanning electron microscope, and transmittance spectrum. The results indicate that the average diameter of ZnO nanorod arrays is about 30 nm, and the narrow size distribution ranges from 20 to 50 nm. The nanorod arrays are growing along wavelength of incident is over 380 nm, the ZnO nanorod arrays growth mechanism of the nanorod arrays was discussed. [001] direction with an orientation perpendicular to the substrate. When the show a high optical transmission of above 95%. Furthermore, the possible
基金Project supported by the Postdoctoral Science Foundation of Central South University,ChinaProjects(50621063,30700008)supported by the National Natural Science Foundation of China
文摘High density ZnO-nanorod arrays(rod length 1.59μm)were successfully synthesized via a microwave-assisted solution-phase method using zinc chloride and ammonia solution as reactants.The influence of concentration of ammonia solution, work power,and microwave irradiation time on the morphology and size of final products was carefully investigated.The crystal structure,chemical composition and morphologies of final products were characterized using X-ray powder diffraction(XRD), scanning electron microscopy(SEM)and photoluminescence(PL).The as-synthesized ZnO is composed of single crystalline and possesses three photoluminescence emissions centered at 400,469 and 534.5 nm,respectively.
