SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed ...SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed by heat-treatment. This membrane was characterized by XRD （X-ray diffraction）, FE-SEM （field emission scanning electron microscopy） and BET （Brunauer-Emmett-Teller） instruments. Hydrogen permeation test was conducted at 0.1 MPa pressure and also variation of temperatures. The obtained value of heat-treated membrane after dip-coating at 298 K was obtained as 1.61 × 10-6 mol/（m2·s·Pa）.展开更多
A series ofn-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering. Their structural properties, I-V curves, photovoltaic effects and photo-response spectra were studied. The photoelectric conve...A series ofn-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering. Their structural properties, I-V curves, photovoltaic effects and photo-response spectra were studied. The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated. It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction. The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/n- SiC/p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing. It shows that the photoresponse ofn-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si. There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.展开更多
文摘SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed by heat-treatment. This membrane was characterized by XRD （X-ray diffraction）, FE-SEM （field emission scanning electron microscopy） and BET （Brunauer-Emmett-Teller） instruments. Hydrogen permeation test was conducted at 0.1 MPa pressure and also variation of temperatures. The obtained value of heat-treated membrane after dip-coating at 298 K was obtained as 1.61 × 10-6 mol/（m2·s·Pa）.
基金Project supported by the National Natural Science Foundation of China(No.50532070)the Funds of Chinese Academy of Sciences for Knowledge Innovation Program(No.KJCX3.5YW.W01)
文摘A series ofn-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering. Their structural properties, I-V curves, photovoltaic effects and photo-response spectra were studied. The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated. It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction. The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/n- SiC/p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing. It shows that the photoresponse ofn-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si. There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.
