The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. ...The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. Through optimizing the process parameters,an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films,the resistivity of the ZAO film is as low as 4.5×10-4 Ω·cm and the average transmissivity in the visible region is around 80%,the optical and electrical properties meet the application requirements.展开更多
According to the basic infrared stealth mechanism of low infrared emissivity powders,the ZAO powder materials were prepared by liquid coprecipitation method,and the starting materials were Zn( NO3) 6H2O and Al( NO3) 3...According to the basic infrared stealth mechanism of low infrared emissivity powders,the ZAO powder materials were prepared by liquid coprecipitation method,and the starting materials were Zn( NO3) 6H2O and Al( NO3) 39H2O. The process parameters were obtained,and the relationship between technology parameters and infrared emissivity was investigated. The temperature of thermal treatment,crystal structure and surface micrograph of ZAO powder was analyzed by the help of TG-DTA,XRD and SEM. The infrared stealth performance of ZAO powder was studied by IR-2 emissivity spectroscopy. Results showed that the infrared emissivity was the lowest when pH was 8. 0,calcination temperature was 1100 ℃,calcination time was 2 h,and the Al2O3doping content was 3% ( mass percentage) . The crystal structure of doped ZAO powder was lead-zinc, and there exists distortion of crystal lattice in nanocrystalline ZnO. The average particle size was 10 μm. The lowest infrared emissivity reached to 0. 61 at between 8 μm and 14 μm. It means that the ZAO powders will be excellent infrared stealthy materials.展开更多
文摘The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. Through optimizing the process parameters,an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films,the resistivity of the ZAO film is as low as 4.5×10-4 Ω·cm and the average transmissivity in the visible region is around 80%,the optical and electrical properties meet the application requirements.
基金Sponsored by the Young Academic Backbone Funding Schemes of Harbin Normal University (Grant No KGB200906)China Postdoctoral Science Foundation( Grant No20100471069)Science and Technology Research Projects of Heilongjiang Provincial Education Department (Grant No11551119)
文摘According to the basic infrared stealth mechanism of low infrared emissivity powders,the ZAO powder materials were prepared by liquid coprecipitation method,and the starting materials were Zn( NO3) 6H2O and Al( NO3) 39H2O. The process parameters were obtained,and the relationship between technology parameters and infrared emissivity was investigated. The temperature of thermal treatment,crystal structure and surface micrograph of ZAO powder was analyzed by the help of TG-DTA,XRD and SEM. The infrared stealth performance of ZAO powder was studied by IR-2 emissivity spectroscopy. Results showed that the infrared emissivity was the lowest when pH was 8. 0,calcination temperature was 1100 ℃,calcination time was 2 h,and the Al2O3doping content was 3% ( mass percentage) . The crystal structure of doped ZAO powder was lead-zinc, and there exists distortion of crystal lattice in nanocrystalline ZnO. The average particle size was 10 μm. The lowest infrared emissivity reached to 0. 61 at between 8 μm and 14 μm. It means that the ZAO powders will be excellent infrared stealthy materials.
