Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation o...Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.展开更多
A wideband CMOS power amplifier with high gain and excellent gain flatness for X-Ku-band radar phased array is proposed in this paper. Excellent gain flatness is achieved with transformer based matching networks(TMNs)...A wideband CMOS power amplifier with high gain and excellent gain flatness for X-Ku-band radar phased array is proposed in this paper. Excellent gain flatness is achieved with transformer based matching networks(TMNs), in which the gain fluctuation of an inter-stage matching network can be compensated by the proposed design methods. The circuit is fabricated in the TSMC 65 nm RF CMOS process. The proposed technique is verified by the measurement results, which show that the wideband PA achieves gain of 21-22.5 dB with only±0.75 dB gain fluctuation and 13-14.6 dBm flat output power between 7.5 and 15.5 GHz,and a little more ripple in the rest of the X-Ku band due to the inaccuracy of passive modelling at high frequency. The circuit delivers saturated and 1 dB-compressed output power of 14.6 and 11.3 dBm respectively at 13 GHz, for a maximal poweradded efficiency(PAE) of 23%.展开更多
基于SiC衬底的0.25μm GaN HEMT工艺,设计了一款X～Ku波段宽带1W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性,并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一...基于SiC衬底的0.25μm GaN HEMT工艺,设计了一款X～Ku波段宽带1W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性,并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一级管芯采用负反馈结构,降低匹配网络的Q值,通过带通匹配网络拓扑,实现了宽带匹配。测试结果表明,在28V的工作电压下,8～18GHz的频率内驱动放大器实现了输出功率大于30dBm,功率附加效率大于21%,功率增益大于15dB。芯片尺寸为:2.20mm×1.45mm。该芯片电路具有频带宽、效率高、尺寸小的特点,主要用于毫米波收发组件、无线通讯等领域,具有广泛的应用前景。展开更多
文摘Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.
基金Project supported partly by the National Natural Science Foundation of China(No.60123456)partly by the National 13th Five-Year Project
文摘A wideband CMOS power amplifier with high gain and excellent gain flatness for X-Ku-band radar phased array is proposed in this paper. Excellent gain flatness is achieved with transformer based matching networks(TMNs), in which the gain fluctuation of an inter-stage matching network can be compensated by the proposed design methods. The circuit is fabricated in the TSMC 65 nm RF CMOS process. The proposed technique is verified by the measurement results, which show that the wideband PA achieves gain of 21-22.5 dB with only±0.75 dB gain fluctuation and 13-14.6 dBm flat output power between 7.5 and 15.5 GHz,and a little more ripple in the rest of the X-Ku band due to the inaccuracy of passive modelling at high frequency. The circuit delivers saturated and 1 dB-compressed output power of 14.6 and 11.3 dBm respectively at 13 GHz, for a maximal poweradded efficiency(PAE) of 23%.
文摘基于SiC衬底的0.25μm GaN HEMT工艺,设计了一款X～Ku波段宽带1W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性,并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一级管芯采用负反馈结构,降低匹配网络的Q值,通过带通匹配网络拓扑,实现了宽带匹配。测试结果表明,在28V的工作电压下,8～18GHz的频率内驱动放大器实现了输出功率大于30dBm,功率附加效率大于21%,功率增益大于15dB。芯片尺寸为:2.20mm×1.45mm。该芯片电路具有频带宽、效率高、尺寸小的特点,主要用于毫米波收发组件、无线通讯等领域,具有广泛的应用前景。
