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Floquet变换及其在电子结构计算中的应用
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作者 张丹 付佳 田虹 《计算数学》 CSCD 北大核心 2024年第3期385-396,共12页
Floquet变换是研究具有周期平移不变性算子的数学工具,本文从这个视角讨论了周期体系量子特征值问题的基本数学性质,由Floquet变换得到Bloch函数,通过Floquet逆变换定义Wannier函数.在此过程中,证明了作用于周期单元平方可积函数的算子H... Floquet变换是研究具有周期平移不变性算子的数学工具,本文从这个视角讨论了周期体系量子特征值问题的基本数学性质,由Floquet变换得到Bloch函数,通过Floquet逆变换定义Wannier函数.在此过程中,证明了作用于周期单元平方可积函数的算子H(k)的自伴性及预解集紧性、Wannier函数作为L^(2)(R^(d))基底的正交性与完备性.还证明了孤立能带关于的连续可微性,介绍了非孤立能带组的光滑化.最后,从Wannier函数的Floquet变换出发,介绍了能带的插值计算. 展开更多
关键词 Floquet变换 wannier函数 量子特征值 第一性原理 能带插值计算
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Construction of maximally localized Wannier functions
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作者 Junbo Zhu Zhu Chen Biao Wu 《Frontiers of physics》 SCIE CSCD 2017年第5期51-55,共5页
We present a general method for constructing maximally localized Wannier functions. It consists of three steps: (i) picking a localized trial wave function, (ii) performing a full band projection, and (iii) ort... We present a general method for constructing maximally localized Wannier functions. It consists of three steps: (i) picking a localized trial wave function, (ii) performing a full band projection, and (iii) orthonormalizing with the LSwdin method. Our method is capable of producing maximally localized Wannier functions without further minimization, and it can be applied straightforwardly to random potentials without using supercells. The effectiveness of our method is demonstrated for both simple bands and composite bands. 展开更多
关键词 wannier function random potential~ cold atomic gases
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导电高分子的Wannier函数构造
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作者 童国平 《浙江师大学报(自然科学版)》 1992年第1期47-51,共5页
由于导电高分子是宽能带体系;对于该体系来说,紧束缚近似下的SSH模型是过于粗糙的。本文对晶格原胞的波函数作了适当的线性组合,给出了导电高分子的Wannier函数。将其应用于一维方势阱模型,结果表明其局域性相当好。
关键词 wannier函数 导电塑料 宽能带体系
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Electronic Transport Calculations Using Maximally-Localized Wannier Functions
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作者 王能平 《Communications in Theoretical Physics》 SCIE CAS CSCD 2011年第1期158-170,共13页
I present a method to calculate the ballistic transport properties of atomic-scale structures under bias. The electronic structure of the system is calculated using the Kohn-Sham scheme of density functionai theory (... I present a method to calculate the ballistic transport properties of atomic-scale structures under bias. The electronic structure of the system is calculated using the Kohn-Sham scheme of density functionai theory (DFT). The DFT eigenvectors are then transformed into a set of maximaily localized Wannier functions (MLWFs) [N. Maxzari and D. Vanderbilt, Phys. Rev. B 56 (1997) 12847]. The MLWFs are used as a minimai basis set to obtain the Hamitonian matrices of the scattering region and the adjacent leads, which are needed for transport calculation using the nonequilibrium Green's function formalism. The coupling of the scattering region to the semi-infinite leads is described by the self-energies of the leads. Using the nonequilibrium Green's function method, one calculates self-consistently the charge distribution of the system under bias and evaluates the transmission and current through the system. To solve the Poisson equation within the scheme of MLWFs I introduce a computationally efficient method. The method is applied to a molecular hydrogen contact in two transition metal monatomic wires (Cu and Pt). It is found that for Pt the I-V characteristics is approximately linear dependence, however, for Cu the I-V characteristics manifests a linear dependence at low bias voltages and exhibits apparent nonlinearity at higher bias voltages. I have also calculated the transmission in the zero bias voltage limit for a single CO molecule adsorbed on Cu and Pt monatomic wires. While a chemical scissor effect occurs for the Cu monatomic wire with an adsorbed CO molecule, it is absent for the Pt monatomie wire due to the contribution of d-orbitals at the Fermi energy, 展开更多
关键词 ballistic transport nonequilibrium Green's function density functional theory wannier function
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基于自洽GW方法的碳化硅准粒子能带结构计算 被引量:2
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作者 高尚鹏 祝桐 《物理学报》 SCIE EI CAS CSCD 北大核心 2012年第13期381-386,共6页
在多体微扰理论的框架下,分别采用G_0W_0方法和准粒子自洽GW方法计算3C-SiC和2H-SiC的准粒子能级.由一个平均Monkhorst-Pack网格点上的准粒子能级和准粒子波函数出发,结合最局域Wannier函数插值,得到3C-SiC和2H-SiC的自洽准粒子能带结构... 在多体微扰理论的框架下,分别采用G_0W_0方法和准粒子自洽GW方法计算3C-SiC和2H-SiC的准粒子能级.由一个平均Monkhorst-Pack网格点上的准粒子能级和准粒子波函数出发,结合最局域Wannier函数插值,得到3C-SiC和2H-SiC的自洽准粒子能带结构.3C-SiC的价带顶在Γ点,导带底在X点.DFT-LDA,G_0W_0和准粒子自洽GW给出的3C-SiC间接禁带宽度分别为1.30eV,2.23 eV和2.88eV 2H-SiC价带顶在Γ点,导带底在K点.采用DFT-LDA,G_0W_0和准粒子自洽GW方法得到的间接禁带宽度分别为2.12 eV,3.12 eV和3.75 eV.计算基于赝势方法,对于3C-SiC和2H-SiC的准粒子自洽GW计算给出的禁带宽度均比实验值略大. 展开更多
关键词 GW方法 最局域wannier函数 SIC 能带结构
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The nonlinear Wannier function in square Krnig-Penney model
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作者 薛锐 梁兆新 李卫东 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第10期4130-4135,共6页
The nonlinear Wannier functions in square Kronig-Penney potential are investigated with the help of a set of exact nonlinear Bloch solutions. The nonlinear interaction makes the Wannier functions fall off as non-expon... The nonlinear Wannier functions in square Kronig-Penney potential are investigated with the help of a set of exact nonlinear Bloch solutions. The nonlinear interaction makes the Wannier functions fall off as non-exponential law with distance and enhances the tunneling coupling between the neighbor sites. 展开更多
关键词 exact nonlinear Bloch solution nonlinear wannier function
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Wannier-Stark阶梯与Bloch振荡
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作者 田强 马本 《北京师范大学学报(自然科学版)》 CAS CSCD 1996年第3期338-340,共3页
通过Green函数建立Wannier-Start阶梯与Bloch振荡之间的直接联系,处于WannierStark阶梯上的电子几率密度随时间的变化就是Bloch振荡.
关键词 BLOCH振荡 超晶格 能带 W-S阶梯 格林函数
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