针对干式机械化学磨削(Mechanical chemical grinding,MCG)单晶硅过程中易产生磨削烧伤、粉尘多、加工环境差等问题,研制一种可用于湿式MCG单晶硅的新型软磨料砂轮,并对砂轮的磨削性能及其磨削单晶硅的材料去除机理进行研究。根据湿式...针对干式机械化学磨削(Mechanical chemical grinding,MCG)单晶硅过程中易产生磨削烧伤、粉尘多、加工环境差等问题,研制一种可用于湿式MCG单晶硅的新型软磨料砂轮,并对砂轮的磨削性能及其磨削单晶硅的材料去除机理进行研究。根据湿式机械化学磨削单晶硅的加工原理和要求,制备出以二氧化硅为磨料、改性耐水树脂为结合剂的新型软磨料砂轮。采用研制的软磨料砂轮对单晶硅进行磨削试验,通过检测加工硅片的表面/亚表面质量对湿式MCG软磨料砂轮的磨削性能进行分析,并与传统金刚石砂轮、干式MCG软磨料砂轮的磨削性能进行对比。采用X射线光电子能谱仪对磨削前后硅片的表面成分进行检测,分析湿式MCG加工硅片过程中发生的化学反应。结果表明,采用湿式MCG软磨料砂轮加工硅片的表面粗糙度Ra值为0.98 nm,亚表面损伤层深度为15 nm,湿式MCG软磨料砂轮磨削硅片的表面/亚表面质量远优于传统金刚石砂轮,达到干式MCG软磨料砂轮的加工效果,可实现湿磨工况下硅片的低损伤磨削加工。在湿式MCG过程中,单晶硅、二氧化硅磨粒与水发生了化学反应,在硅片表面生成易于去除的硅酸化合物,硅酸化合物进一步通过砂轮磨粒与硅片间的机械摩擦作用被磨粒从单晶硅表面去除,在机械与化学作用复合作用下实现硅片超低损伤磨削加工。展开更多
Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results ...Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.展开更多
文摘针对干式机械化学磨削(Mechanical chemical grinding,MCG)单晶硅过程中易产生磨削烧伤、粉尘多、加工环境差等问题,研制一种可用于湿式MCG单晶硅的新型软磨料砂轮,并对砂轮的磨削性能及其磨削单晶硅的材料去除机理进行研究。根据湿式机械化学磨削单晶硅的加工原理和要求,制备出以二氧化硅为磨料、改性耐水树脂为结合剂的新型软磨料砂轮。采用研制的软磨料砂轮对单晶硅进行磨削试验,通过检测加工硅片的表面/亚表面质量对湿式MCG软磨料砂轮的磨削性能进行分析,并与传统金刚石砂轮、干式MCG软磨料砂轮的磨削性能进行对比。采用X射线光电子能谱仪对磨削前后硅片的表面成分进行检测,分析湿式MCG加工硅片过程中发生的化学反应。结果表明,采用湿式MCG软磨料砂轮加工硅片的表面粗糙度Ra值为0.98 nm,亚表面损伤层深度为15 nm,湿式MCG软磨料砂轮磨削硅片的表面/亚表面质量远优于传统金刚石砂轮,达到干式MCG软磨料砂轮的加工效果,可实现湿磨工况下硅片的低损伤磨削加工。在湿式MCG过程中,单晶硅、二氧化硅磨粒与水发生了化学反应,在硅片表面生成易于去除的硅酸化合物,硅酸化合物进一步通过砂轮磨粒与硅片间的机械摩擦作用被磨粒从单晶硅表面去除,在机械与化学作用复合作用下实现硅片超低损伤磨削加工。
基金Project (50975040) supported by the National Natural Science Foundation of China
文摘Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.
基金National Natural Science Foundation of China(52265056)Natural Science Foundation of Gansu(21JR7RA228)Hongliu Youth Fund of Lanzhou University of Technology(07/062004)。
