Multiferroic nanodots can be harnessed to aid the development of the next generation of nonvolatile data storage and multi-functional devices. In this paper, we review the computational aspects of multiferroic nanodot...Multiferroic nanodots can be harnessed to aid the development of the next generation of nonvolatile data storage and multi-functional devices. In this paper, we review the computational aspects of multiferroic nanodot materials and designs that hold promise for the future memory technology. Conception, methodology, and sys- tematical studies are discussed, followed by some up-to-date experimental progress towards the ultimate limits. At the end of this paper, we outline some challenges remaining in multiferroic research, and how the first principles based approach can be employed as an important tool providing critical information to understand the emergent phenomena in multiferroics.展开更多
A vortex domain wall's(VW) magnetic racetrack memory's high performance depends on VW structural stability,high speed, low power consumption and high storage density. In this study, these critical parameters w...A vortex domain wall's(VW) magnetic racetrack memory's high performance depends on VW structural stability,high speed, low power consumption and high storage density. In this study, these critical parameters were investigated in magnetic multi-segmented nanowires using micromagnetic simulation. Thus, an offset magnetic nanowire with a junction at the center was proposed for this purpose. This junction was implemented by shifting one portion of the magnetic nanowire horizontally in the x-direction(l) and vertically(d) in the y-direction. The VW structure became stable by manipulating magnetic properties, such as magnetic saturation(M_(4)) and magnetic anisotropy energy(K_(u)). In this case, increasing the values of M_(4) ≥ 800 kA/m keeps the VW structure stable during its dynamics and pinning and depinning in offset nanowires,which contributes to maintenance of the storage memory's lifetime for a longer period. It was also found that the VW moved with a speed of 500 m/s, which is desirable for VW racetrack memory devices. Moreover, it was revealed that the VW velocity could be controlled by adjusting the offset area dimensions(l and d), which helps to drive the VW by using low current densities and reducing the thermal-magnetic spin fluctuations. Further, the depinning current density of the VW(J_(d)) over the offset area increases as d increases and l decreases. In addition, magnetic properties, such as the M_(4) and K_(u),can affect the depinning process of the VW through the offset area. For high storage density, magnetic nanowires(multisegmented) with four junctions were designed. In total, six states were found with high VW stability, which means three bits per cell. Herein, we observed that the depinning current density(J_(d)) for moving the VW from one state to another was highly influenced by the offset area geometry(l and d) and the material's magnetic properties, such as the M_(4) and K_(u).展开更多
基金supported by the Eastern Scholar Program from the Shanghai Municipal Education Commissionthe National Natural Science Foundation of China (Grant No. 11274222)the Shanghai Supercomputer Center, and the Shanghai Shuguang Program (Grant No. 12SG34)
文摘Multiferroic nanodots can be harnessed to aid the development of the next generation of nonvolatile data storage and multi-functional devices. In this paper, we review the computational aspects of multiferroic nanodot materials and designs that hold promise for the future memory technology. Conception, methodology, and sys- tematical studies are discussed, followed by some up-to-date experimental progress towards the ultimate limits. At the end of this paper, we outline some challenges remaining in multiferroic research, and how the first principles based approach can be employed as an important tool providing critical information to understand the emergent phenomena in multiferroics.
文摘A vortex domain wall's(VW) magnetic racetrack memory's high performance depends on VW structural stability,high speed, low power consumption and high storage density. In this study, these critical parameters were investigated in magnetic multi-segmented nanowires using micromagnetic simulation. Thus, an offset magnetic nanowire with a junction at the center was proposed for this purpose. This junction was implemented by shifting one portion of the magnetic nanowire horizontally in the x-direction(l) and vertically(d) in the y-direction. The VW structure became stable by manipulating magnetic properties, such as magnetic saturation(M_(4)) and magnetic anisotropy energy(K_(u)). In this case, increasing the values of M_(4) ≥ 800 kA/m keeps the VW structure stable during its dynamics and pinning and depinning in offset nanowires,which contributes to maintenance of the storage memory's lifetime for a longer period. It was also found that the VW moved with a speed of 500 m/s, which is desirable for VW racetrack memory devices. Moreover, it was revealed that the VW velocity could be controlled by adjusting the offset area dimensions(l and d), which helps to drive the VW by using low current densities and reducing the thermal-magnetic spin fluctuations. Further, the depinning current density of the VW(J_(d)) over the offset area increases as d increases and l decreases. In addition, magnetic properties, such as the M_(4) and K_(u),can affect the depinning process of the VW through the offset area. For high storage density, magnetic nanowires(multisegmented) with four junctions were designed. In total, six states were found with high VW stability, which means three bits per cell. Herein, we observed that the depinning current density(J_(d)) for moving the VW from one state to another was highly influenced by the offset area geometry(l and d) and the material's magnetic properties, such as the M_(4) and K_(u).
