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Optical and scintillation properties of Bi_4Si_3O_(12):RE(RE=Eu^(3+), Sm^(3+),Ho^(3+), Tb^(3+))single crystals 被引量:2
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作者 Xuefeng Xiao Jiayue Xu +3 位作者 Haicheng Wei Yaoqing Chu Bobo Yang Xuefeng Zhang 《Journal of Rare Earths》 SCIE EI CAS CSCD 2019年第3期260-264,共5页
Bi_4 Si_3 O_(12):RE(BSO:RE, RE = Eu^(3+), Sm^(3+), Ho^(3+), Tb^(3+)) crystals were grown by the modified vertical Bridgeman method, and doping effects on scintillation properties were investigated. Under γ-ray irradi... Bi_4 Si_3 O_(12):RE(BSO:RE, RE = Eu^(3+), Sm^(3+), Ho^(3+), Tb^(3+)) crystals were grown by the modified vertical Bridgeman method, and doping effects on scintillation properties were investigated. Under γ-ray irradiation, the light yield of BSO doped with small doses of Eu^(3+) increases slightly, and the energy resolution improves significantly compared to pure BSO, therefore the ability of distinguishing between particles will be improved for BSO crystals with a small amount of Eu^(3+) dopant. The results show that a small amount of Eu^(3+) doping can sensitize the Bi^(3+) ions. The sensitization effect enables the reduction of intrinsic defects, and thus improves the scintillation properties. However, the relative light yield of BSO:Tb(1.0 mol%) crystal is 4.3%, which is smaller than 5.0% of pure BSO. The improved light yield and energy resolution in the BSO:Eu and BSO:Sm crystals are considered an impressive achievement in the optimization of this scintillator which is already suitable for applications such as dual-readout calorimeters and homogeneous hadron calorimeters. 展开更多
关键词 BSO crystal vertical bridgeman method Scintillation characteristics RELATIVE light YIELD RARE earths
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6英寸半绝缘GaAs单晶VGF和VB联合生长技术
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作者 周春锋 兰天平 +2 位作者 边义午 曹志颖 罗惠英 《半导体技术》 CAS 北大核心 2020年第5期383-389,共7页
为了生长6英寸(1英寸=2.54 cm)半绝缘GaAs单晶,采用水平梯度凝固(HGF)法合成GaAs多晶。将装有籽晶、GaAs多晶、氧化硼和碳粉的热解氮化硼(PBN)坩埚装入石英管内并抽真空后密封。然后将石英管装入单晶炉内,升温熔化多晶并熔接籽晶后,采... 为了生长6英寸(1英寸=2.54 cm)半绝缘GaAs单晶,采用水平梯度凝固(HGF)法合成GaAs多晶。将装有籽晶、GaAs多晶、氧化硼和碳粉的热解氮化硼(PBN)坩埚装入石英管内并抽真空后密封。然后将石英管装入单晶炉内,升温熔化多晶并熔接籽晶后,采用垂直梯度凝固(VGF)法生长晶体肩部,采用垂直布里奇曼(VB)法生长晶体等径部分。在对VGF和VB晶体生长法进行理论分析的基础上,采取优化支撑结构、增加VGF晶体生长降温速率、优化VB晶体生长速度等措施提高6英寸GaAs晶体生长的成晶率至48%以上。基于半绝缘GaAs补偿理论,采取过量碳粉掺杂和El2的控制等措施,提高晶体电阻率至大于4×10^7Ω·cm,降低电阻率不均匀性至小于25%。通过优化生长界面,使GaAs单晶的位错密度降低至小于104 cm^-2。 展开更多
关键词 GAAS 半绝缘单晶 单晶生长 垂直梯度凝固(VGF)法 垂直布里奇曼(VB)法
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