Expected for many promising applications in the field of electronics and optoelectronics, a reliable method for the characterization of graphene electrical transport properties is desired to predict its device perform...Expected for many promising applications in the field of electronics and optoelectronics, a reliable method for the characterization of graphene electrical transport properties is desired to predict its device performance or provide feedback for its synthesis.However, the commonly used methods of extracting carrier mobility from graphene field effect transistor or Hall-bar is time consuming, expensive, and significantly affected by the device fabrication process other than graphene itself.Here we reported a general and simple method to evaluate the electrical transport performance of graphene by the van der Pauw–Hall measurement.By annealing graphene in vacuum to remove the adsorbed dopants and then exposing it in ambient surroundings, carrier mobility as a function of density can be measured with the increase of carrier density due to the dopant re-adsorption from the surroundings.Further, the relationship between the carrier mobility and density can be simply fitted with a power equation to the first level approximation, with which any pair of measured carrier mobility and density can be normalized to an arbitrary carrier density for comparison.We experimentally demonstrated the reliability of the method, which is much simpler than making devices and may promote the standard making for graphene characterization.展开更多
With the increasing availability of large-area graphene, the ability to rapidly and accurately assess the quality of the electrical properties has become critically important. For practical applications, spatial varia...With the increasing availability of large-area graphene, the ability to rapidly and accurately assess the quality of the electrical properties has become critically important. For practical applications, spatial variability in carrier density and carrier mobility must be controlled and minimized. We present a simple framework for assessing the quality and homogeneity of large-area graphene devices. The field effect in both exfoliated graphene devices encapsulated in hexagonal boron nitride and chemical vapor-deposited （CVD） devices was measured in dual current-voltage configurations and used to derive a single, gate-dependent effective shape factor, t, for each device, β is a sensitive indicator of spatial homogeneity that can be obtained from samples of arbitrary shape. All 50 devices investigated in this study show a variation （up to tenfold） in β as a function of the gate bias. Finite element simulations suggest that spatial doping inhomogeneity, rather than mobility inhomogeneity, is the primary cause of the gate dependence of β, and that measurable variations of β can be caused by doping variations as small as 10^10 cm^-2. Our results suggest that local variations in the position of the Dirac point alter the current flow and thus the effective sample shape as a function of the gate bias. We also found that such variations lead to systematic errors in carrier mobility calculations, which can be revealed by inspecting the corresponding β factor.展开更多
For plane singly-connected domains with insulating boundary and four point-sized contacts, C<sub>0</sub> …C<sub>3</sub>, van der Pauw derived a famous equation relating the two trans-...For plane singly-connected domains with insulating boundary and four point-sized contacts, C<sub>0</sub> …C<sub>3</sub>, van der Pauw derived a famous equation relating the two trans-resistances R<sub>01,23</sub>, R<sub>12,30</sub> with the sheet resistance without any other parameters. If the domain has one hole van der Pauw’s equation becomes an inequality with upper and lower bounds, the envelopes. This was conjectured by Szymański et al. in 2013, and only recently it was proven by Miyoshi et al. with elaborate mathematical tools. The present article gives new proofs closer to physical intuition and partly with simpler mathematics. It relies heavily on conformal transformation and it expresses for the first time the trans-resistances and the lower envelope in terms of Jacobi functions, elliptic integrals, and the modular lambda elliptic function. New simple formulae for the asymptotic limit of a very large hole are also given.展开更多
The objective of this work research is the use of four-point measurements and so-called Van Der Pauw methods in measuring the resistivity of copper thin films widely used in the manufacture of planar components such a...The objective of this work research is the use of four-point measurements and so-called Van Der Pauw methods in measuring the resistivity of copper thin films widely used in the manufacture of planar components such as inductor and others. Aligned configuration and square configuration are commonly used to measure thin films resistivity before use. But differences in values between the two configurations according to frequency and thickness were observed according to the authors. Measurements with both configurations on the same thin films must make it possible to know measurements evolution as a function of frequency and thickness. The observation of measuring frequency ranges of each configuration and the minimum thicknesses to have solid copper resistivity are the main contributions of the paper. This electrical characterization is carried out on copper thin films deposited on alumina substrates (50 mm × 20 mm × 635 μm) using RF sputtering technique. Copper thin films with various thicknesses (3.3 μm, 3.6 μm and 5.2 μm) were characterized. Low-frequency electrical characterization of these thin films was performed by four-point measurement method and using an HP 4284A type LCRmeter over the frequency range of 20 Hz to 1 MHz. Van der Pauw’s method was used to calculate resistivity. These studies allowed us to know influence of measurement configurations and influence of parameters such as frequency and thickness of the copper thin films on resistivity.展开更多
为实现对于电导率的准确测量,研究Van Der Pauw原理及其应用于电导率绝对测量的理论依据,设计径轴二维可调的四电极结构.分析电极的对称性、电导池的封闭性对测量结果的影响,实验结果证明对称性好、结构封闭的Van Der Pauw法电导率计,...为实现对于电导率的准确测量,研究Van Der Pauw原理及其应用于电导率绝对测量的理论依据,设计径轴二维可调的四电极结构.分析电极的对称性、电导池的封闭性对测量结果的影响,实验结果证明对称性好、结构封闭的Van Der Pauw法电导率计,对溶液电导率具有较高的测量精度,并能够实现绝对测量.基于Van Der Pauw法的电导池常数κ仅与电极长度有关的原则,设计几种不同电极长度的电极,开展多种不同电导率溶液的测量实验,得出不同电导池常数κ的最佳测量范围.运用电导池常数为0.1cm-1的电极,对电导率为20~500μS/cm内的多个实际水样进行测量,相对误差小于1.0%.结果表明该新型电导率测量方法具有很好的应用前景和推广价值.展开更多
采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pau...采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pauw法测量了ZAO薄膜的电学特性,结果显示其电导率在500℃达到最大值.测量了ZAO薄膜的室温微区光致发光和变温发光光谱,观测到了ZnO自由激子、束缚在中性施主中心(D0)上的束缚激子以及束缚在离化施主中心(D+0)上的束缚激子发射.展开更多
In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO: Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycry...In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO: Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycrystal with a hexagonal structure andc-axis preferred orientation. The intense UV emissions and weak deep-level green emissions were observed. The films show high transparency, conductivity and high carrier concentration. Van der Pauw measurements show that the films are n-type degenerate semiconductor. The lowest resistivity is 6.7×10?4 Ω⊙cm at room temperature. These films exhibit a carrier density above 1020 cm?3. The conduction mechanism was discussed. The behavior of metallic conduction can be observed in the high temperature range.展开更多
We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P...We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P-STM）. The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.展开更多
The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite...The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.展开更多
基金supported by the National Natural Science Foundation of China (51772043 and 51802036)the Open Foundation of National Engineering Research Center of Electromagnetic Radiation Control Materials (ZYGX2017K003-3)+2 种基金Sichuan Science and Technology Program (2018GZ0434)the support from the Shenzhen Peacock Plan (1208040050847074)the Office of Naval Research (ONR) support Grant (NAVY N00014-17-1-2973)
文摘Expected for many promising applications in the field of electronics and optoelectronics, a reliable method for the characterization of graphene electrical transport properties is desired to predict its device performance or provide feedback for its synthesis.However, the commonly used methods of extracting carrier mobility from graphene field effect transistor or Hall-bar is time consuming, expensive, and significantly affected by the device fabrication process other than graphene itself.Here we reported a general and simple method to evaluate the electrical transport performance of graphene by the van der Pauw–Hall measurement.By annealing graphene in vacuum to remove the adsorbed dopants and then exposing it in ambient surroundings, carrier mobility as a function of density can be measured with the increase of carrier density due to the dopant re-adsorption from the surroundings.Further, the relationship between the carrier mobility and density can be simply fitted with a power equation to the first level approximation, with which any pair of measured carrier mobility and density can be normalized to an arbitrary carrier density for comparison.We experimentally demonstrated the reliability of the method, which is much simpler than making devices and may promote the standard making for graphene characterization.
文摘With the increasing availability of large-area graphene, the ability to rapidly and accurately assess the quality of the electrical properties has become critically important. For practical applications, spatial variability in carrier density and carrier mobility must be controlled and minimized. We present a simple framework for assessing the quality and homogeneity of large-area graphene devices. The field effect in both exfoliated graphene devices encapsulated in hexagonal boron nitride and chemical vapor-deposited （CVD） devices was measured in dual current-voltage configurations and used to derive a single, gate-dependent effective shape factor, t, for each device, β is a sensitive indicator of spatial homogeneity that can be obtained from samples of arbitrary shape. All 50 devices investigated in this study show a variation （up to tenfold） in β as a function of the gate bias. Finite element simulations suggest that spatial doping inhomogeneity, rather than mobility inhomogeneity, is the primary cause of the gate dependence of β, and that measurable variations of β can be caused by doping variations as small as 10^10 cm^-2. Our results suggest that local variations in the position of the Dirac point alter the current flow and thus the effective sample shape as a function of the gate bias. We also found that such variations lead to systematic errors in carrier mobility calculations, which can be revealed by inspecting the corresponding β factor.
文摘For plane singly-connected domains with insulating boundary and four point-sized contacts, C<sub>0</sub> …C<sub>3</sub>, van der Pauw derived a famous equation relating the two trans-resistances R<sub>01,23</sub>, R<sub>12,30</sub> with the sheet resistance without any other parameters. If the domain has one hole van der Pauw’s equation becomes an inequality with upper and lower bounds, the envelopes. This was conjectured by Szymański et al. in 2013, and only recently it was proven by Miyoshi et al. with elaborate mathematical tools. The present article gives new proofs closer to physical intuition and partly with simpler mathematics. It relies heavily on conformal transformation and it expresses for the first time the trans-resistances and the lower envelope in terms of Jacobi functions, elliptic integrals, and the modular lambda elliptic function. New simple formulae for the asymptotic limit of a very large hole are also given.
文摘The objective of this work research is the use of four-point measurements and so-called Van Der Pauw methods in measuring the resistivity of copper thin films widely used in the manufacture of planar components such as inductor and others. Aligned configuration and square configuration are commonly used to measure thin films resistivity before use. But differences in values between the two configurations according to frequency and thickness were observed according to the authors. Measurements with both configurations on the same thin films must make it possible to know measurements evolution as a function of frequency and thickness. The observation of measuring frequency ranges of each configuration and the minimum thicknesses to have solid copper resistivity are the main contributions of the paper. This electrical characterization is carried out on copper thin films deposited on alumina substrates (50 mm × 20 mm × 635 μm) using RF sputtering technique. Copper thin films with various thicknesses (3.3 μm, 3.6 μm and 5.2 μm) were characterized. Low-frequency electrical characterization of these thin films was performed by four-point measurement method and using an HP 4284A type LCRmeter over the frequency range of 20 Hz to 1 MHz. Van der Pauw’s method was used to calculate resistivity. These studies allowed us to know influence of measurement configurations and influence of parameters such as frequency and thickness of the copper thin films on resistivity.
文摘为实现对于电导率的准确测量,研究Van Der Pauw原理及其应用于电导率绝对测量的理论依据,设计径轴二维可调的四电极结构.分析电极的对称性、电导池的封闭性对测量结果的影响,实验结果证明对称性好、结构封闭的Van Der Pauw法电导率计,对溶液电导率具有较高的测量精度,并能够实现绝对测量.基于Van Der Pauw法的电导池常数κ仅与电极长度有关的原则,设计几种不同电极长度的电极,开展多种不同电导率溶液的测量实验,得出不同电导池常数κ的最佳测量范围.运用电导池常数为0.1cm-1的电极,对电导率为20~500μS/cm内的多个实际水样进行测量,相对误差小于1.0%.结果表明该新型电导率测量方法具有很好的应用前景和推广价值.
文摘采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pauw法测量了ZAO薄膜的电学特性,结果显示其电导率在500℃达到最大值.测量了ZAO薄膜的室温微区光致发光和变温发光光谱,观测到了ZnO自由激子、束缚在中性施主中心(D0)上的束缚激子以及束缚在离化施主中心(D+0)上的束缚激子发射.
基金This work was supported by the National Natural Science Foundation of China(Grant Nos.60176003 and 60376009).
文摘In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO: Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycrystal with a hexagonal structure andc-axis preferred orientation. The intense UV emissions and weak deep-level green emissions were observed. The films show high transparency, conductivity and high carrier concentration. Van der Pauw measurements show that the films are n-type degenerate semiconductor. The lowest resistivity is 6.7×10?4 Ω⊙cm at room temperature. These films exhibit a carrier density above 1020 cm?3. The conduction mechanism was discussed. The behavior of metallic conduction can be observed in the high temperature range.
基金supported by the Science Fund from the Ministry of Science and Technology of China(Grant No.2013CBA01600)the National Key Research&Development Project of China(Grant No.2016YFA0202300)+1 种基金the National Natural Science Foundation of China(Grant Nos.61474141,61674170,61335006,61390501,51325204,and 51210003)the Chinese Academy of Sciences(CAS) and Youth Innovation Promotion Association of CAS(Grant No.20150005)
文摘We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P-STM）. The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.
文摘The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.
