A novel level shift circuit featuring with high dV/dt noise immunity and improved negative V_S capacity is proposed in this paper.Compared with the conventional structure,the proposed circuit adopting two cross-couple...A novel level shift circuit featuring with high dV/dt noise immunity and improved negative V_S capacity is proposed in this paper.Compared with the conventional structure,the proposed circuit adopting two cross-coupled PMOS transistors realizes the selective filtering ability by exploiting the path which filters out the noise introduced by the dV/dt.In addition,a differential noise cancellation circuit is proposed to enhance the noise immunity further.Meanwhile,the negative V_S capacity is improved by unifying the detected reference voltage and the logic block＇s threshold voltage.A high voltage half bridge gate drive IC adopting the presented structure is experimentally realized by using a usual 600 V BCD process and achieves the stable operation up to 65 V/ns of the dV/dt characteristics.展开更多
The effect of volume fraction V_M and carbon content(%C)_M of martensite was studied on the fa- tigue crack propagation behaviour of plain carbon martensite plus ferrite M+F dual-phase steel.The experimental results s...The effect of volume fraction V_M and carbon content(%C)_M of martensite was studied on the fa- tigue crack propagation behaviour of plain carbon martensite plus ferrite M+F dual-phase steel.The experimental results show that the △K_(th)decreases and da/dn increases with increasing V_M and (%C)_M at a load ratio R=0.05.High△K_(th)values are obtained by obvious crack closing ability caused by high roughness of the fractured surfaces.展开更多
文摘A novel level shift circuit featuring with high dV/dt noise immunity and improved negative V_S capacity is proposed in this paper.Compared with the conventional structure,the proposed circuit adopting two cross-coupled PMOS transistors realizes the selective filtering ability by exploiting the path which filters out the noise introduced by the dV/dt.In addition,a differential noise cancellation circuit is proposed to enhance the noise immunity further.Meanwhile,the negative V_S capacity is improved by unifying the detected reference voltage and the logic block＇s threshold voltage.A high voltage half bridge gate drive IC adopting the presented structure is experimentally realized by using a usual 600 V BCD process and achieves the stable operation up to 65 V/ns of the dV/dt characteristics.
文摘The effect of volume fraction V_M and carbon content(%C)_M of martensite was studied on the fa- tigue crack propagation behaviour of plain carbon martensite plus ferrite M+F dual-phase steel.The experimental results show that the △K_(th)decreases and da/dn increases with increasing V_M and (%C)_M at a load ratio R=0.05.High△K_(th)values are obtained by obvious crack closing ability caused by high roughness of the fractured surfaces.
