In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor （HEMT） with a U-type gate foot. The U-gate Al...In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor （HEMT） with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate A1GaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications.展开更多
In order to explore the propagation law of gas explosion in U type laneways,the propagation law of flame and shock wave in U type duct were experimentally and theoret- ically investigated.It is shown that the shock wa...In order to explore the propagation law of gas explosion in U type laneways,the propagation law of flame and shock wave in U type duct were experimentally and theoret- ically investigated.It is shown that the shock wave takes on the complicated stress state and the flame takes on complicated change rules in the U type duct.The propagation process of gas explosion in bend duct is the mutual action of explosion wave,flame and complicate flow,the destruction in bend surface is especially serious.In the mine exploita- tion and laneway design,the bend laneway should be avoided,especially continuous bend laneway.展开更多
基金Project supported by the Major Program of the National Natural Science Foundation of China （Grant No. 60890191） and the National Key Basic Research Program of China （Grant No. 2010CB327503）.
文摘In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor （HEMT） with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate A1GaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications.
基金the National Natural Science Foundation of China(50674047,50534090,50574093)State Key Base Development Plan(2005CB221506)
文摘In order to explore the propagation law of gas explosion in U type laneways,the propagation law of flame and shock wave in U type duct were experimentally and theoret- ically investigated.It is shown that the shock wave takes on the complicated stress state and the flame takes on complicated change rules in the U type duct.The propagation process of gas explosion in bend duct is the mutual action of explosion wave,flame and complicate flow,the destruction in bend surface is especially serious.In the mine exploita- tion and laneway design,the bend laneway should be avoided,especially continuous bend laneway.
