After cumulative discharge of gas discharge tube(GDT),it is easy to form a short circuit pathway between the two electrodes,which increases the failure risk and causes severe influences on the protected object.To redu...After cumulative discharge of gas discharge tube(GDT),it is easy to form a short circuit pathway between the two electrodes,which increases the failure risk and causes severe influences on the protected object.To reduce the failure risk of GDT and improve cumulative discharge times before failure,this work aims to suppress the formation of two short-circuit pathways by optimizing the tube wall structure,the electrode materials and the electrode structure.A total of five improved GDT samples are designed by focusing on the insulation resistance change that occurs after the improvement;then,by combining these designs with the microscopic morphology changes inside the cavity and the differences in deposition composition,the reasons for the differences in the GDT failure risk are also analyzed.The experimental results show that compared with GDT of traditional structure and material,the method of adding grooves at both ends of the tube wall can effectively block the deposition pathway of the tube wall,and the cumulative discharge time before device failure is increased by 149%.On this basis,when the iron-nickel electrode is replaced with a tungsten-copper electrode,the difference in the electrode’s surface splash characteristics further extends the discharge time before failure by 183%.In addition,when compared with the traditional electrode structure,the method of adding an annular structure at the electrode edge to block the splashing pathway for the particles on the electrode surface shows no positive effect,and the cumulative discharge time before the failure of the two structures is reduced by 22.8%and 49.7%,respectively.Among these improved structures,the samples with grooves at both ends of the tube wall and tungsten-copper as their electrode material have the lowest failure risk.展开更多
基金supported by National Natural Science Foundation of China(No.U1834204)。
文摘After cumulative discharge of gas discharge tube(GDT),it is easy to form a short circuit pathway between the two electrodes,which increases the failure risk and causes severe influences on the protected object.To reduce the failure risk of GDT and improve cumulative discharge times before failure,this work aims to suppress the formation of two short-circuit pathways by optimizing the tube wall structure,the electrode materials and the electrode structure.A total of five improved GDT samples are designed by focusing on the insulation resistance change that occurs after the improvement;then,by combining these designs with the microscopic morphology changes inside the cavity and the differences in deposition composition,the reasons for the differences in the GDT failure risk are also analyzed.The experimental results show that compared with GDT of traditional structure and material,the method of adding grooves at both ends of the tube wall can effectively block the deposition pathway of the tube wall,and the cumulative discharge time before device failure is increased by 149%.On this basis,when the iron-nickel electrode is replaced with a tungsten-copper electrode,the difference in the electrode’s surface splash characteristics further extends the discharge time before failure by 183%.In addition,when compared with the traditional electrode structure,the method of adding an annular structure at the electrode edge to block the splashing pathway for the particles on the electrode surface shows no positive effect,and the cumulative discharge time before the failure of the two structures is reduced by 22.8%and 49.7%,respectively.Among these improved structures,the samples with grooves at both ends of the tube wall and tungsten-copper as their electrode material have the lowest failure risk.
