Two kinds of continuous-wave GaN-based ultraviolet laser diodes（LDs） operated at room temperature and with different emission wavelengths are demonstrated.The LDs epitaxial layers are grown on GaN substrate by metal...Two kinds of continuous-wave GaN-based ultraviolet laser diodes（LDs） operated at room temperature and with different emission wavelengths are demonstrated.The LDs epitaxial layers are grown on GaN substrate by metalorganic chemical vapor deposition,with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of the ultraviolet LDs are investigated under direct-current injection at room temperature.The stimulated emission peak wavelength of first LD is 392.9 nm,the threshold current density and voltage is 1.5kA/cm^2 and 5.0 V,respectively.The output light power is 80 mW under the 4.0 kA/cm^2 injection current density.The stimulated emission peak wavelength of second LD is 381.9 nm,the threshold current density the voltage is2.8 kA/cm^2 and 5.5 V,respectively.The output light power is 14 mW under a 4.0 kA/cm^2 injection current density.展开更多
绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了...绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了基于0.15μm SOI工艺的1.5 V MOS器件电特性在高温下的退化机理和抑制方法,通过增加栅氧厚度、降低阱浓度、调整轻掺杂漏离子注入工艺等优化方法,实现了一种性能良好的短沟道高温SOI CMOS器件,在25~250℃温度范围内,该器件阈值电压漂移量<30%,饱和电流漂移量<15%,漏电流<1 nA/μm。此外采用仿真的方法分析了器件在高温下的漏区电势和电场的变化规律,将栅诱导漏极泄漏电流效应与器件高温漏电流关联起来,从而定性地解释了SOI短沟道器件高温漏电流退化的机理。展开更多
基金Projects the supported by the National Key R&D Program of China(Nos.2016YFB0401801,2016YFB0400803)the National Natural Science Foundation of China(Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,61376089)+1 种基金the Science Challenge Project(No.JCKY2016212A503)the One Hundred Person Project of the Chinese Academy of Sciences
文摘Two kinds of continuous-wave GaN-based ultraviolet laser diodes（LDs） operated at room temperature and with different emission wavelengths are demonstrated.The LDs epitaxial layers are grown on GaN substrate by metalorganic chemical vapor deposition,with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of the ultraviolet LDs are investigated under direct-current injection at room temperature.The stimulated emission peak wavelength of first LD is 392.9 nm,the threshold current density and voltage is 1.5kA/cm^2 and 5.0 V,respectively.The output light power is 80 mW under the 4.0 kA/cm^2 injection current density.The stimulated emission peak wavelength of second LD is 381.9 nm,the threshold current density the voltage is2.8 kA/cm^2 and 5.5 V,respectively.The output light power is 14 mW under a 4.0 kA/cm^2 injection current density.
文摘绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了基于0.15μm SOI工艺的1.5 V MOS器件电特性在高温下的退化机理和抑制方法,通过增加栅氧厚度、降低阱浓度、调整轻掺杂漏离子注入工艺等优化方法,实现了一种性能良好的短沟道高温SOI CMOS器件,在25~250℃温度范围内,该器件阈值电压漂移量<30%,饱和电流漂移量<15%,漏电流<1 nA/μm。此外采用仿真的方法分析了器件在高温下的漏区电势和电场的变化规律,将栅诱导漏极泄漏电流效应与器件高温漏电流关联起来,从而定性地解释了SOI短沟道器件高温漏电流退化的机理。
