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Effects of Growth Conditions on the Microstructure Characteristics of CdS Thin Films by AP-MOCVD
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作者 Dong Dong Xiao-Bo Liu Jiang-Bo Li Cheng-Wei Shang Wen-Cheng Hu 《Journal of Electronic Science and Technology》 CAS 2010年第2期149-153,共5页
Growth of cadmium sulfide (CdS) thin films on glass substrates was carried out by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using Cd(S2CNEt2)2 as the single precursor. Changes in th... Growth of cadmium sulfide (CdS) thin films on glass substrates was carried out by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using Cd(S2CNEt2)2 as the single precursor. Changes in the surface morphology of the deposited CdS thin films were investigated by atomic force microscope (AFM) as the function of substrate temperature (Ts), vaporizing temperature (Tv), and Ar flow rate. With the increase of Tv, CdS thin films evolved from pyramidal structure with fine grains to columnar structure with large grains. X-ray diffraction (XRD) patterns indicated that the CdS films had random orientation at the lower Tv and preferred orientation at the higher Tv. In addition, Ts had a great effect on the surface roughness of the CdS films, and a quantum dot-like structural CdS films were obtained in a narrow range of Ts with high Ar flow rate. Furthermore, the optical properties of the CdS films were measured using ultraviolet-visible (UV/VIS) spectrometer. 展开更多
关键词 Index terms---atmospheric pressure cadmium sulfide (CdS) metal-organic chemical vapor deposition (MOCVD) single precursor surface morphology.
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炼厂常压塔的腐蚀分析与设计选材 被引量:3
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作者 谷峰 臧红武 《石油机械》 北大核心 2001年第11期47-48,51,共3页
炼油厂常压蒸馏装置的常压塔运行介质原油中夹带杂质,导致产生低温HCI-H2S-H2O腐蚀、硫及硫化物腐蚀和高温环烷酸腐蚀,其中以高温环烷酸腐蚀尤为突出。防止低温 HCl-H2S-H2O腐蚀常采取原油深度脱盐,脱(盐)... 炼油厂常压蒸馏装置的常压塔运行介质原油中夹带杂质,导致产生低温HCI-H2S-H2O腐蚀、硫及硫化物腐蚀和高温环烷酸腐蚀,其中以高温环烷酸腐蚀尤为突出。防止低温 HCl-H2S-H2O腐蚀常采取原油深度脱盐,脱(盐)后注碱,塔顶挥发线注氨、注缓蚀剂和注水等防腐工艺;防止高温环烷酸腐蚀可将常压塔的主体材料采用20R+316L复合钢板,常压塔内件采用普通碳钢渗铝材料。中原 250×104t/a常压蒸馏装置的常压塔下部塔体制造时采用 20R+316L复合钢板来防止环烷酸腐蚀。 展开更多
关键词 炼油 常压塔 腐蚀 防腐 选材
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