Magnetization associated with reversible phase transformation or rearrangement of martensite variants of two kinds of shape memory alloys under the coupling of tensile stress were investigated.One is the austenitic Ni...Magnetization associated with reversible phase transformation or rearrangement of martensite variants of two kinds of shape memory alloys under the coupling of tensile stress were investigated.One is the austenitic Ni_(46)Mn_(28)Ga_(20)Co_(3)Cu_(3)micro wire with the [001] preferred orientation,which exhibits enhanced cyclic stability and large fully recoverable strain(> 8%) due to the stress-induced reversible martensitic transformation at room temperature.The other is the Ni_(54)Mn_(24)Ga_(22)microwire with ferromagnetic martensitic phase,which has preferential orientation and also exhibits large tensile strain.Based on the improved mechanical properties,the strain-magnetization effect of the two kinds of microwire under the coupling of orthogonal magnetic field and tensile stress was performed and the results indicate that the magnetization decreases with the increase of tensile strains.Furthermore,the magnetization mechanism related to the magnetostructural evolution under stress-magnetic coupling was discussed.This study provides a new way for smart magnetic microwires for novel non-contact and non-destructive detection.展开更多
We investigate the effects of strain on the electronic and magnetic properties of ReS2 monolayer with sulfur vacancies using density functional theory.Unstrained ReS2 monolayer with monosulfur vacancy（Vs） and disulf...We investigate the effects of strain on the electronic and magnetic properties of ReS2 monolayer with sulfur vacancies using density functional theory.Unstrained ReS2 monolayer with monosulfur vacancy（Vs） and disulfur vacancy（V（2S））both are nonmagnetic.However,as strain increases to 8%,VS-doped ReS2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment.In particular,for V（2S）-doped ReS2 monolayer,the system becomes a magnetic semiconductor under 6%strain,in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other,and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μb under 7%strain.Our results imply that the strain-manipulated ReS2 monolayer with VS and V（2S） can be a possible candidate for new spintronic applications.展开更多
Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-wei...Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight,portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices.展开更多
基金financially supported by the National High Technology Research and Development Program of China (No.2015AA034101)the State Key Laboratory for Advanced Metals and Materials (No.2018Z-26)+1 种基金the National Natural Science Foundation of China (No.51771121)the Science and Technology Commission of Shanghai Municipality (No.20ZR1437500)。
文摘Magnetization associated with reversible phase transformation or rearrangement of martensite variants of two kinds of shape memory alloys under the coupling of tensile stress were investigated.One is the austenitic Ni_(46)Mn_(28)Ga_(20)Co_(3)Cu_(3)micro wire with the [001] preferred orientation,which exhibits enhanced cyclic stability and large fully recoverable strain(> 8%) due to the stress-induced reversible martensitic transformation at room temperature.The other is the Ni_(54)Mn_(24)Ga_(22)microwire with ferromagnetic martensitic phase,which has preferential orientation and also exhibits large tensile strain.Based on the improved mechanical properties,the strain-magnetization effect of the two kinds of microwire under the coupling of orthogonal magnetic field and tensile stress was performed and the results indicate that the magnetization decreases with the increase of tensile strains.Furthermore,the magnetization mechanism related to the magnetostructural evolution under stress-magnetic coupling was discussed.This study provides a new way for smart magnetic microwires for novel non-contact and non-destructive detection.
基金Project supported by the National Natural Science Foundation of China(Grant No.11547030)
文摘We investigate the effects of strain on the electronic and magnetic properties of ReS2 monolayer with sulfur vacancies using density functional theory.Unstrained ReS2 monolayer with monosulfur vacancy（Vs） and disulfur vacancy（V（2S））both are nonmagnetic.However,as strain increases to 8%,VS-doped ReS2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment.In particular,for V（2S）-doped ReS2 monolayer,the system becomes a magnetic semiconductor under 6%strain,in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other,and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μb under 7%strain.Our results imply that the strain-manipulated ReS2 monolayer with VS and V（2S） can be a possible candidate for new spintronic applications.
基金supported by the National Key R&D Program of China(No.2016YFA0201102)the National Natural Science Foundation of China(Nos.51571208,51301191,51525103,11274321,11474295,51401230)+4 种基金the Youth Innovation Promotion Association of the Chinese Academy of Sciences(No.2016270)the Key Research Program of the Chinese Academy of Sciences(No.KJZD-EW-M05)the Ningbo Major Project for Science and Technology(No.2014B11011)the Ningbo Science and Technology Innovation Team(No.2015B11001)and the Ningbo Natural Science Foundation(No.2015A610110)
文摘Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight,portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices.
