This paper reports that the nano-sheet carbon films （NSCFs） were fabricated on Si wafer chips with hydrogen- methane gas mixture by means of quartz-tube-type microwave plasma chemical vapour deposition （MWPCVD）. I...This paper reports that the nano-sheet carbon films （NSCFs） were fabricated on Si wafer chips with hydrogen- methane gas mixture by means of quartz-tube-type microwave plasma chemical vapour deposition （MWPCVD）. In order to further improve the field emission （FE） characteristics, a 5-nm Au film was prepared on the samples by using electron beam evaporation. The FE properties were obviously improved due to depositing Au thin film on NSCFs. The FE current density at a macroscopic electric field, E, of 9 V/μm was increased from 12.4 mA/cm2 to 27.2 mA/cm2 and the threshold field was decreased from 2.6 V/μm to 2.0 V/μm for Au-coated carbon films. A modified F-N model considering statistic effects of FE tip structures in the low E region and a space-chavge-limited-current effect in the high E region were applied successfully to explain the FE data of the Au-coated NSCF.展开更多
文摘This paper reports that the nano-sheet carbon films （NSCFs） were fabricated on Si wafer chips with hydrogen- methane gas mixture by means of quartz-tube-type microwave plasma chemical vapour deposition （MWPCVD）. In order to further improve the field emission （FE） characteristics, a 5-nm Au film was prepared on the samples by using electron beam evaporation. The FE properties were obviously improved due to depositing Au thin film on NSCFs. The FE current density at a macroscopic electric field, E, of 9 V/μm was increased from 12.4 mA/cm2 to 27.2 mA/cm2 and the threshold field was decreased from 2.6 V/μm to 2.0 V/μm for Au-coated carbon films. A modified F-N model considering statistic effects of FE tip structures in the low E region and a space-chavge-limited-current effect in the high E region were applied successfully to explain the FE data of the Au-coated NSCF.
