SnS∶Ag thin films were deposited on ITO glasses by pulse electro-deposition. By studying the effect of duty cycle on the properties of SnS∶Ag thin films, the optimum off-time(toff) is obtained to be 5 s, namely, the...SnS∶Ag thin films were deposited on ITO glasses by pulse electro-deposition. By studying the effect of duty cycle on the properties of SnS∶Ag thin films, the optimum off-time(toff) is obtained to be 5 s, namely, the optimal duty cycle is about 67%. The primary phase of SnS∶Ag films deposited on optimum parameters condition is SnS compound with good crystallization, and the films prefer to grow towards (111) plane. The films are dense, smooth and uniform with good microstructure, and the grains in the films are densely packed together, and their direct bandgap is about 1.40 eV. In addition, the bandgap of the films first rises and then drops with the increase of the duty cycle.展开更多
SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300℃) in N2 atmosphere for 2h in order to obta...SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300℃) in N2 atmosphere for 2h in order to obtain sil-ver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogonal struc-ture, and the crystallites in the films were ex-clusively oriented along the(111)direction. With the increase of the annealing temperature, the carrier concentration and mobility of the films first rose and then dropped, whereas their re-sistivity and direct band gap Eg showed the contrary trend. At the annealing temperature of 260℃, the SnS:Ag films had the best properties: the direct bandgap was 1.3 eV, the carrier con-centration was up to 1.132 × 1017 cm-3, and the resistivity was about 3.1 Ωcm.展开更多
SnS：Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase （Ag8SnS6） with g...SnS：Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase （Ag8SnS6） with good crystallization and big grain size. The conductivity of the films was measured by photoelectrochemical test. It is proved that the SnS：Ag films are p-type of semiconductor. Hall measurement shows that the carrier concentration of the films increases, while their resistivity decreases after Ag-doping.展开更多
基金National Nature Sciences Funding of China(61076063)Key Project of Fujian Provincial Department of Science &Technology(2008I0019)Fujian Provincial Natural Science Foundation of China(2009J01285)
文摘SnS∶Ag thin films were deposited on ITO glasses by pulse electro-deposition. By studying the effect of duty cycle on the properties of SnS∶Ag thin films, the optimum off-time(toff) is obtained to be 5 s, namely, the optimal duty cycle is about 67%. The primary phase of SnS∶Ag films deposited on optimum parameters condition is SnS compound with good crystallization, and the films prefer to grow towards (111) plane. The films are dense, smooth and uniform with good microstructure, and the grains in the films are densely packed together, and their direct bandgap is about 1.40 eV. In addition, the bandgap of the films first rises and then drops with the increase of the duty cycle.
文摘SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300℃) in N2 atmosphere for 2h in order to obtain sil-ver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogonal struc-ture, and the crystallites in the films were ex-clusively oriented along the(111)direction. With the increase of the annealing temperature, the carrier concentration and mobility of the films first rose and then dropped, whereas their re-sistivity and direct band gap Eg showed the contrary trend. At the annealing temperature of 260℃, the SnS:Ag films had the best properties: the direct bandgap was 1.3 eV, the carrier con-centration was up to 1.132 × 1017 cm-3, and the resistivity was about 3.1 Ωcm.
基金supported by the Depart ment of Science & Technology of Fujian Province(Nos.2008I0019,2006F5062,2006J0032)the Fuzhou University(Nos.K-081005,XRC-0736)~~
文摘SnS：Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase （Ag8SnS6） with good crystallization and big grain size. The conductivity of the films was measured by photoelectrochemical test. It is proved that the SnS：Ag films are p-type of semiconductor. Hall measurement shows that the carrier concentration of the films increases, while their resistivity decreases after Ag-doping.
