In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that c...In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that can determine both the optimum bias point and the frequency point for achieving the minimum noise figure is put forward. The method can be used to determine the optimum impedance over a relevant wider operating frequency range. The results show that this kind of optimizing method is more suitable for the WLAN circuits design. The LNA gain is optimized and the noise figure （NF） is reduced. This method can also achieve the noise match and power match simultaneously. This proposal is applied on designing a LNA for IEEE 802.1 la WLAN. The LNA exhibits a power gain large than 16 dB from 5.15 to 5.825 GHz range. The noise figure is lower than 2 dB. The OIP3 is -8 dBm. Also the LNA is matched to 50 Ω input impedance with 6 mA DC current for differential design.展开更多
By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0....By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the device give good DC characteristics (β > 100) and high-frequency performance (fT = 67 GHz), thus meeting the requirements for technical specifications in 0.35 μm SiGe BiCMOS process technology.展开更多
文摘In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that can determine both the optimum bias point and the frequency point for achieving the minimum noise figure is put forward. The method can be used to determine the optimum impedance over a relevant wider operating frequency range. The results show that this kind of optimizing method is more suitable for the WLAN circuits design. The LNA gain is optimized and the noise figure （NF） is reduced. This method can also achieve the noise match and power match simultaneously. This proposal is applied on designing a LNA for IEEE 802.1 la WLAN. The LNA exhibits a power gain large than 16 dB from 5.15 to 5.825 GHz range. The noise figure is lower than 2 dB. The OIP3 is -8 dBm. Also the LNA is matched to 50 Ω input impedance with 6 mA DC current for differential design.
文摘By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the device give good DC characteristics (β > 100) and high-frequency performance (fT = 67 GHz), thus meeting the requirements for technical specifications in 0.35 μm SiGe BiCMOS process technology.
