The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated ...The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated using capacitance-voltage （C V） measurements. The experimental results show that the interface states density （Dit） can be obviously decreased by the POA in NO ambient （NO-POA） and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Dit on POA temperature and time has been also discussed in detail.展开更多
We study a series of（HfO2）x（Al2O3）1-x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 e V and the conduction band offset of Hf AlO is 1.11–1.72 e V. The conduction band offsets...We study a series of（HfO2）x（Al2O3）1-x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 e V and the conduction band offset of Hf AlO is 1.11–1.72 e V. The conduction band offsets of（Hf O2）x（Al2O3）1-x are increased with the increase of the Al composition, and the（HfO2）x（Al2O3）1-x offer acceptable barrier heights（〉 1 e V）for both electrons and holes. With a higher conduction band offset,（Hf O2）x（Al2O3）1-x/4H-SiC MOS capacitors result in a ～ 3 orders of magnitude lower gate leakage current at an effective electric field of 15 MV/cm and roughly the same effective breakdown field of ～ 25 MV/cm compared to HfO2. Considering the tradeoff among the band gap, the band offset, and the dielectric constant, we conclude that the optimum Al2O3 concentration is about 30% for an alternative gate dielectric in 4H-Si C power MOS-based transistors.展开更多
In order to improve dry sliding wear resistance of pure aluminum against steel, aluminum-based composites reinforced with different contents of SiC,MoS2 and SiC/MoS2 particles were synthesized by press and sintering o...In order to improve dry sliding wear resistance of pure aluminum against steel, aluminum-based composites reinforced with different contents of SiC,MoS2 and SiC/MoS2 particles were synthesized by press and sintering of the corresponding powder mixtures. The microstructural evaluations showed a dense microstructure which were in good agreement with the result of density and hardness measurements. The results of pin on disk wear tests performed against an AISI 52100 steel pin at a constant load and sliding velocity showed that there was a critical content for both types of the reinforcements at which the lowest wear rate was obtained, i.e. 10 vol.% and 2 vol.%, respectively,for Al/SiC and Al/MoS2 composites. However,the lowest wear rate and friction of coefficient were attained for Al/10 SiC/2 MoS2 hybrid composite. According to the scanning electron microscope observations, the predominant wear mechanism was changed from adhesion to abrasion mostly whenMoS2 particles were incorporated in the pure aluminum. Mild delamination was identified as the main wear mechanism for Al/SiC and Al/SiC/MoS2 composites. The frictional traces and worn surfaces of Al/SiC/MoS2 composites approached to those of Al/SiC composites,indicating the dominant role of SiC particles in tribological behavior of the hybrid composites.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61234006)the State Grid of China(No.sgri-wd-71-14-003)
文摘The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated using capacitance-voltage （C V） measurements. The experimental results show that the interface states density （Dit） can be obviously decreased by the POA in NO ambient （NO-POA） and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Dit on POA temperature and time has been also discussed in detail.
基金supported by the National Natural Science Foundation of China(Grant Nos.51272202 and 61234006)the Science Project of State Grid,China(Grant No.SGRI-WD-71-14-004)
文摘We study a series of（HfO2）x（Al2O3）1-x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 e V and the conduction band offset of Hf AlO is 1.11–1.72 e V. The conduction band offsets of（Hf O2）x（Al2O3）1-x are increased with the increase of the Al composition, and the（HfO2）x（Al2O3）1-x offer acceptable barrier heights（〉 1 e V）for both electrons and holes. With a higher conduction band offset,（Hf O2）x（Al2O3）1-x/4H-SiC MOS capacitors result in a ～ 3 orders of magnitude lower gate leakage current at an effective electric field of 15 MV/cm and roughly the same effective breakdown field of ～ 25 MV/cm compared to HfO2. Considering the tradeoff among the band gap, the band offset, and the dielectric constant, we conclude that the optimum Al2O3 concentration is about 30% for an alternative gate dielectric in 4H-Si C power MOS-based transistors.
文摘In order to improve dry sliding wear resistance of pure aluminum against steel, aluminum-based composites reinforced with different contents of SiC,MoS2 and SiC/MoS2 particles were synthesized by press and sintering of the corresponding powder mixtures. The microstructural evaluations showed a dense microstructure which were in good agreement with the result of density and hardness measurements. The results of pin on disk wear tests performed against an AISI 52100 steel pin at a constant load and sliding velocity showed that there was a critical content for both types of the reinforcements at which the lowest wear rate was obtained, i.e. 10 vol.% and 2 vol.%, respectively,for Al/SiC and Al/MoS2 composites. However,the lowest wear rate and friction of coefficient were attained for Al/10 SiC/2 MoS2 hybrid composite. According to the scanning electron microscope observations, the predominant wear mechanism was changed from adhesion to abrasion mostly whenMoS2 particles were incorporated in the pure aluminum. Mild delamination was identified as the main wear mechanism for Al/SiC and Al/SiC/MoS2 composites. The frictional traces and worn surfaces of Al/SiC/MoS2 composites approached to those of Al/SiC composites,indicating the dominant role of SiC particles in tribological behavior of the hybrid composites.
