The interracial structure of hard and soft oxides grown by dry oxidation on<100> n-type silicon substrates is examined using high resolution mild X-ray photoelectron spectroscopy (XPS) before and after irradiati...The interracial structure of hard and soft oxides grown by dry oxidation on<100> n-type silicon substrates is examined using high resolution mild X-ray photoelectron spectroscopy (XPS) before and after irradiation. Substantial differences in silicon of silica state (B.E. 103.4 eV), silicon of transitional state (B.E. 101.5 eV), surplus oxygen (B.E. 529.6 eV) and negative two-valence oxygen (B.E. 531.4 eV) are observed between the two kinds of samples. The XPS spectra strongly depend on the conditions of irradiation for soft samples, but do not as remarkablely as soft samples for hard samples. The effects of irradiation doses on XPS are greater than that of irradiation bias fields. Some viewpoints of irradiation induced hole electron pair are proposed to explain the results.展开更多
The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characterist...The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.展开更多
A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation i...A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.展开更多
The first level plasmons of Si in the pure Si state （corresponding to bonding energy （BE） of 116.95 eV） and in the SiO2 state （corresponding to BE of 122.0 eV） of Si-SiO2 prepared by irradiation hard and soft pr...The first level plasmons of Si in the pure Si state （corresponding to bonding energy （BE） of 116.95 eV） and in the SiO2 state （corresponding to BE of 122.0 eV） of Si-SiO2 prepared by irradiation hard and soft processing were studied with XPS before and after 60Co radiation. The experimental results indicate that there was an interface consisting of the two plasmons, this interface was extended by 60Co radiation, the fractions of the plasmon for Si in the Si-SiO2 were changed with the variation of radiation dosage, the difference of the change in fraction of plasmons for the two kinds of samples was that the soft varied faster than hard, the change of concentrations in plasmons for both hard and soft Si-SiO2 irradiated in positive bias field were greater than that in bias-free field. The experimental results are explained from the view point of energy absorbed in form of quantization.展开更多
Core-shell structured SiC@SiO_(2)nanowires and Si@SiO_(2)nanowires were prepared on the surface of carbon/carbon(C/C)composites by a thermal evaporation method using SiO powders as the silicon source and Ni(NO3)2 as t...Core-shell structured SiC@SiO_(2)nanowires and Si@SiO_(2)nanowires were prepared on the surface of carbon/carbon(C/C)composites by a thermal evaporation method using SiO powders as the silicon source and Ni(NO3)2 as the catalyst.The average diameters of SiC@SiO_(2)nanowires and Si@SiO_(2)nanowires are about 145 nm,and the core-shell diameter ratios are about 0.41 and 0.53,respectively.The SiO_(2)shells of such two nanowires resulted from the reaction between SiO and CO and the reaction of SiO itself,respectively,based on the model analysis.The growth of these two nanowires conformed to the vapor-liquid-solid(VLS)mode.In this mode,CO played an important role in the growth of nanowires.There existed a critical partial pressure of CO(pC)determining the microstructure evolution of nanowires into whether SiC@SiO_(2)or Si@SiO_(2).The value of pC was calculated to be 4.01×10^(-15) Pa from the thermodynamic computation.Once the CO partial pressure in the system was greater than the pC,SiO tended to react with CO,causing the formation of SiC@SiO_(2)nanowires.However,the decomposition of SiO played a predominant role and the products mainly consisted of Si@SiO_(2)nanowires.This work may be helpful for the regulation of the growth process and the understanding of the growth mechanism of silicon-based nanowires.展开更多
基金This work was supported by Beijing Zhongguancun Associated Center of Analysis and Measurement
文摘The interracial structure of hard and soft oxides grown by dry oxidation on<100> n-type silicon substrates is examined using high resolution mild X-ray photoelectron spectroscopy (XPS) before and after irradiation. Substantial differences in silicon of silica state (B.E. 103.4 eV), silicon of transitional state (B.E. 101.5 eV), surplus oxygen (B.E. 529.6 eV) and negative two-valence oxygen (B.E. 531.4 eV) are observed between the two kinds of samples. The XPS spectra strongly depend on the conditions of irradiation for soft samples, but do not as remarkablely as soft samples for hard samples. The effects of irradiation doses on XPS are greater than that of irradiation bias fields. Some viewpoints of irradiation induced hole electron pair are proposed to explain the results.
基金Project supported by the National Natural Science Foundation of China.
文摘The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.
文摘A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.
基金Beijing Zhongguancun Associated Center of Analysis and Measurement
文摘The first level plasmons of Si in the pure Si state （corresponding to bonding energy （BE） of 116.95 eV） and in the SiO2 state （corresponding to BE of 122.0 eV） of Si-SiO2 prepared by irradiation hard and soft processing were studied with XPS before and after 60Co radiation. The experimental results indicate that there was an interface consisting of the two plasmons, this interface was extended by 60Co radiation, the fractions of the plasmon for Si in the Si-SiO2 were changed with the variation of radiation dosage, the difference of the change in fraction of plasmons for the two kinds of samples was that the soft varied faster than hard, the change of concentrations in plasmons for both hard and soft Si-SiO2 irradiated in positive bias field were greater than that in bias-free field. The experimental results are explained from the view point of energy absorbed in form of quantization.
基金This work was supported by the National Natural Science Foundation of China(Nos.52061135102,52101098)Innovation Talent Promotion Plan of Shaanxi Province for Science and Technology Innovation Team(No.2020TD-003)+2 种基金Young Talents for Science and Technology Association supported by Shaanxi Province(No.20200406)the Fund of Key Laboratory of National Defense Science and Technology in Northwestern Polytechnical University(No.JCKYS2020607003)Innovation and Entrepreneurship Training Program for College Students(No.202110699088).
文摘Core-shell structured SiC@SiO_(2)nanowires and Si@SiO_(2)nanowires were prepared on the surface of carbon/carbon(C/C)composites by a thermal evaporation method using SiO powders as the silicon source and Ni(NO3)2 as the catalyst.The average diameters of SiC@SiO_(2)nanowires and Si@SiO_(2)nanowires are about 145 nm,and the core-shell diameter ratios are about 0.41 and 0.53,respectively.The SiO_(2)shells of such two nanowires resulted from the reaction between SiO and CO and the reaction of SiO itself,respectively,based on the model analysis.The growth of these two nanowires conformed to the vapor-liquid-solid(VLS)mode.In this mode,CO played an important role in the growth of nanowires.There existed a critical partial pressure of CO(pC)determining the microstructure evolution of nanowires into whether SiC@SiO_(2)or Si@SiO_(2).The value of pC was calculated to be 4.01×10^(-15) Pa from the thermodynamic computation.Once the CO partial pressure in the system was greater than the pC,SiO tended to react with CO,causing the formation of SiC@SiO_(2)nanowires.However,the decomposition of SiO played a predominant role and the products mainly consisted of Si@SiO_(2)nanowires.This work may be helpful for the regulation of the growth process and the understanding of the growth mechanism of silicon-based nanowires.
