A novel DLC film deposition method was proposed to realize the deposition of DLC film on the surface of complex shaped workpiece.Meanwhile,Si-DLC film was deposited on the surface of M2 high-speed steel(HSS M2)and 304...A novel DLC film deposition method was proposed to realize the deposition of DLC film on the surface of complex shaped workpiece.Meanwhile,Si-DLC film was deposited on the surface of M2 high-speed steel(HSS M2)and 304 stainless steel(304SS),and the microstructure,surface roughness,mechanical properties,corrosion resistance and tribological properties of Si-DLC films were characterized in detail.Results show that Si-DLC film at different axial positions of the auxiliary cathode possesses similar microstructure,film thickness and surface roughness,and the as-deposited Si-DLC film shows the low intrinsic stress of<0.3 GPa.Compared with the 304SS substrate,the Si-DLC film presents more noble corrosion potential,lower corrosion current density and higher polarization resistance,exhibiting higher corrosion resistance.Moreover,the Si-DLC film exhibits higher hardness,elastic factor and plastic factor than HSS M2 substrate and the corresponding adhesive strength is more than 10 N.The Si-DLC film sliding against GCr15 steel ball shows a lower friction coefficient than that of HSS M2 substrate and the wear rate of GCr15 steel ball sliding against the Si-DLC is lower than that of HSS M2 substrate.In addition,this novel method was used to deposit Si-DLC film on gears,drills and bearings without rotating sample racks.As a consequence,this method possesses great potential and can be generalized for the deposition of DLC film on the surface of complex shape workpiece.展开更多
Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) ...Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.展开更多
The infrared transmission spectra of a 0.54-μm-thick Ge film and a 20-μm-thick Si film were experimentally measured. As the incident radiation was in the wavelength range from 1.5 μm to 10 μm, the Ge film demonstr...The infrared transmission spectra of a 0.54-μm-thick Ge film and a 20-μm-thick Si film were experimentally measured. As the incident radiation was in the wavelength range from 1.5 μm to 10 μm, the Ge film demonstrated a strongly spectral coherence. However, thermal radiation of the Ge film was found to be spatially incoherent due to its extreme thinness. The Si film exhibited significantly spectral and spatial coherence. The results confirmed that thermal radiation of a monolayer film could be coherent spectrally and spatially if the film thickness was comparable with the wavelength. The optical characteristic matrix method was applied to calculate the transmission spectra of the Si and Ge film, and the results agreed well with the measurements. This method was further used to analyze two multilayer films composed of five low emissive layers. Their emissivities were found to be highly emissive at a certain zenith angle, and the emissive peak could be controlled by careful selection of film thickness.展开更多
In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer...In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer were prepared by means of spin coating technique and mechanical mixing of organic and inorganic materials.V_(2)O_(5)was studied for its effects on the surface morphology,chemical composition,and optical transmittance of PEDOT:PSS films.The findings of the study show that the addition of V_(2)O_(5)particles changes the surface morphology of PEDOT:PSS films and promotes its superior ohmic contact with the Si interface.Furthermore,PEDOT:PSS incorporated with V_(2)O_(5)particles that have outstanding optical and semiconductor properties reduces the rate of carrier recombination at the device interface and blocks electron transport to the anode in the fabricated Si-based solar cells.When compared to conventional PEDOT:PSS/Si planar heterojunction solar cells,the fill factor,photoelectric conversion efficiency,open-circuit voltage,and short-circuit current density of the devices prepared in this study can be significantly improved,reaching up to 70.98%,15.17%,652 mV and 32.8 mA/cm^(2),respectively.This research provides a promising and effective method for improving the photoelectric conversion performance of PEDOT:PSS/Si heterojunction solar cells,which enables the application of V_(2)O_(5)in Si solar cells.展开更多
由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力,GaN/Si 基器件成为一个研究热点。然而,GaN 与 Si 之间的热失配容易引起薄膜开裂,这是限制 LED 及其它电子器件结构生长的一个关键问题。近年来...由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力,GaN/Si 基器件成为一个研究热点。然而,GaN 与 Si 之间的热失配容易引起薄膜开裂,这是限制 LED 及其它电子器件结构生长的一个关键问题。近年来,随着工艺的发展,GaN 晶体质量得到大幅度的提高。同时不少研究小组成功地在Si 衬底上制造出 LED。介绍了 GaN 薄膜开裂问题及近期硅衬底 GaN 基 LED 的研究进展。展开更多
Hydrogen bonding configurations and hydrogen content in hydrogenated amorphous silicon (a-Si:H) thin films prepared at different precursor gas temperatures with undiluted silane have been investigated by means of Four...Hydrogen bonding configurations and hydrogen content in hydrogenated amorphous silicon (a-Si:H) thin films prepared at different precursor gas temperatures with undiluted silane have been investigated by means of Fourier transform infrared (FTIR) spectroscopy.The results show that the gas temperature before precursor gases entering the glow-discharge zone re-markably influences the hydrogen bonding configurations and the hydrogen content in a-Si:H thin films.The hydrogen content decreases from 18% down to 11% when increasing the gas temperature from room temperature (RT) to 433 K.Meanwhile,the clustered hydrogen at the physical film surface or at the internal surfaces of the microvoids decreases,indicating that a-Si:H thin films are densified at higher precursor gas temperatures.For a-Si:H thin films deposited at gas temperature of 433 K,the isolated silicon-hydrogen bonding configuration is predominant in the testing films.展开更多
The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic ...The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic field profiles is obtained quantitatively by using Lorentz fit.The results indicate that the gradient value of the magnetic field profile near by the substrate,which is produced by a coil current with 137.7A if a SmCo permanent magnet is equipped under the substrate holder,is the largest;when the SmCo permanent magnet is taken away,the larger one is produced by the coil current with 137.7A and the smallest one produced by a coil current with 115.2A.High deposition rate of a-Si∶H film is observed near by the substrate with high magnetic field gradient.But uneven deposition rate along the radius of the sample holder is also found by infrared analysis technology when sample is deposited in magnetic field profile,which is produced by the coil current with 137.7A if the SmCo permanent magnet is equipped under the substrate holder.展开更多
基金financially supported by the National Key R&D Program of China(No.2018YFB0703801)the Sichuan Science and Technology Program(No.2019YFSY0012)the CAS"Light of West China"Program。
文摘A novel DLC film deposition method was proposed to realize the deposition of DLC film on the surface of complex shaped workpiece.Meanwhile,Si-DLC film was deposited on the surface of M2 high-speed steel(HSS M2)and 304 stainless steel(304SS),and the microstructure,surface roughness,mechanical properties,corrosion resistance and tribological properties of Si-DLC films were characterized in detail.Results show that Si-DLC film at different axial positions of the auxiliary cathode possesses similar microstructure,film thickness and surface roughness,and the as-deposited Si-DLC film shows the low intrinsic stress of<0.3 GPa.Compared with the 304SS substrate,the Si-DLC film presents more noble corrosion potential,lower corrosion current density and higher polarization resistance,exhibiting higher corrosion resistance.Moreover,the Si-DLC film exhibits higher hardness,elastic factor and plastic factor than HSS M2 substrate and the corresponding adhesive strength is more than 10 N.The Si-DLC film sliding against GCr15 steel ball shows a lower friction coefficient than that of HSS M2 substrate and the wear rate of GCr15 steel ball sliding against the Si-DLC is lower than that of HSS M2 substrate.In addition,this novel method was used to deposit Si-DLC film on gears,drills and bearings without rotating sample racks.As a consequence,this method possesses great potential and can be generalized for the deposition of DLC film on the surface of complex shape workpiece.
基金Project(51271012)supported by the National Natural Science Foundation of China
文摘Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.
基金Supported by the National Natural Science Foundation of China (Grant No. 50376025)
文摘The infrared transmission spectra of a 0.54-μm-thick Ge film and a 20-μm-thick Si film were experimentally measured. As the incident radiation was in the wavelength range from 1.5 μm to 10 μm, the Ge film demonstrated a strongly spectral coherence. However, thermal radiation of the Ge film was found to be spatially incoherent due to its extreme thinness. The Si film exhibited significantly spectral and spatial coherence. The results confirmed that thermal radiation of a monolayer film could be coherent spectrally and spatially if the film thickness was comparable with the wavelength. The optical characteristic matrix method was applied to calculate the transmission spectra of the Si and Ge film, and the results agreed well with the measurements. This method was further used to analyze two multilayer films composed of five low emissive layers. Their emissivities were found to be highly emissive at a certain zenith angle, and the emissive peak could be controlled by careful selection of film thickness.
基金supported by the National Natural Science Foundation of China(Grant No.52164050,51762043,61764009,51974143)National Key R&D Program of China(No.2018YFC1901801,No.2018YFC1901805)+1 种基金Major Science and Technology Project of Yunnan Province(202202AB080010,2019ZE00703)Yunnan University“Double First-class”Construction Joint Special Project-major project(202201BF070001-018).
文摘In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer were prepared by means of spin coating technique and mechanical mixing of organic and inorganic materials.V_(2)O_(5)was studied for its effects on the surface morphology,chemical composition,and optical transmittance of PEDOT:PSS films.The findings of the study show that the addition of V_(2)O_(5)particles changes the surface morphology of PEDOT:PSS films and promotes its superior ohmic contact with the Si interface.Furthermore,PEDOT:PSS incorporated with V_(2)O_(5)particles that have outstanding optical and semiconductor properties reduces the rate of carrier recombination at the device interface and blocks electron transport to the anode in the fabricated Si-based solar cells.When compared to conventional PEDOT:PSS/Si planar heterojunction solar cells,the fill factor,photoelectric conversion efficiency,open-circuit voltage,and short-circuit current density of the devices prepared in this study can be significantly improved,reaching up to 70.98%,15.17%,652 mV and 32.8 mA/cm^(2),respectively.This research provides a promising and effective method for improving the photoelectric conversion performance of PEDOT:PSS/Si heterojunction solar cells,which enables the application of V_(2)O_(5)in Si solar cells.
文摘由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力,GaN/Si 基器件成为一个研究热点。然而,GaN 与 Si 之间的热失配容易引起薄膜开裂,这是限制 LED 及其它电子器件结构生长的一个关键问题。近年来,随着工艺的发展,GaN 晶体质量得到大幅度的提高。同时不少研究小组成功地在Si 衬底上制造出 LED。介绍了 GaN 薄膜开裂问题及近期硅衬底 GaN 基 LED 的研究进展。
基金supported by the Ministry of Education of People’s Republic of China (Grant No. J2009JBPY003)
文摘Hydrogen bonding configurations and hydrogen content in hydrogenated amorphous silicon (a-Si:H) thin films prepared at different precursor gas temperatures with undiluted silane have been investigated by means of Fourier transform infrared (FTIR) spectroscopy.The results show that the gas temperature before precursor gases entering the glow-discharge zone re-markably influences the hydrogen bonding configurations and the hydrogen content in a-Si:H thin films.The hydrogen content decreases from 18% down to 11% when increasing the gas temperature from room temperature (RT) to 433 K.Meanwhile,the clustered hydrogen at the physical film surface or at the internal surfaces of the microvoids decreases,indicating that a-Si:H thin films are densified at higher precursor gas temperatures.For a-Si:H thin films deposited at gas temperature of 433 K,the isolated silicon-hydrogen bonding configuration is predominant in the testing films.
文摘The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic field profiles is obtained quantitatively by using Lorentz fit.The results indicate that the gradient value of the magnetic field profile near by the substrate,which is produced by a coil current with 137.7A if a SmCo permanent magnet is equipped under the substrate holder,is the largest;when the SmCo permanent magnet is taken away,the larger one is produced by the coil current with 137.7A and the smallest one produced by a coil current with 115.2A.High deposition rate of a-Si∶H film is observed near by the substrate with high magnetic field gradient.But uneven deposition rate along the radius of the sample holder is also found by infrared analysis technology when sample is deposited in magnetic field profile,which is produced by the coil current with 137.7A if the SmCo permanent magnet is equipped under the substrate holder.
