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基于SI4463的低功耗无线窖池测温系统的设计与应用 被引量:13
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作者 王志勇 孙顺远 徐保国 《计算机测量与控制》 北大核心 2014年第2期519-521,524,共4页
针对在现代白酒窖池固态发酵过程中测温方式落后的问题,文章提出了一种实时监测酒醅发酵过程中温度变化的低功耗无线测温系统,并对系统架构和软硬件进行了详细的分析说明;系统以STM8L为微处理器,SI4463为无线通信模块,Labview开发人性... 针对在现代白酒窖池固态发酵过程中测温方式落后的问题,文章提出了一种实时监测酒醅发酵过程中温度变化的低功耗无线测温系统,并对系统架构和软硬件进行了详细的分析说明;系统以STM8L为微处理器,SI4463为无线通信模块,Labview开发人性化操作软件界面,通过最小二乘法分段线性拟合PT100电阻和温度的一阶关系保证系统精度;节点间采用通过跳频机制和周期性唤醒机制确保MAC通信稳定和低功耗;该系统性能稳定,在实际运用中取得良好效果,采用3 000 mAh3.6V的锂电池供电可运行4年以上。 展开更多
关键词 PT100 无线通信 si4463 LABVIEW
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355nm纳秒脉冲激光在硅表面照射形成微结构及其荧光检测 被引量:13
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作者 刘春阳 孙立东 +4 位作者 傅星 孙凤鸣 胡春光 Peter Zeppenfeld 胡小唐 《中国激光》 EI CAS CSCD 北大核心 2010年第8期2139-2142,共4页
利用自主研发设计的波长为355 nm的纳秒脉冲激光微加工系统,在硅(100)表面进行照射加工,形成了线槽宽度约25μm的微结构。利用荧光显微检测和光谱检测等观测手段,对形成的线槽结构进行观测分析,发现加工过的区域可以发生强烈的光致发... 利用自主研发设计的波长为355 nm的纳秒脉冲激光微加工系统,在硅(100)表面进行照射加工,形成了线槽宽度约25μm的微结构。利用荧光显微检测和光谱检测等观测手段,对形成的线槽结构进行观测分析,发现加工过的区域可以发生强烈的光致发光现象。使用波长范围为400~440 nm的照明光照射加工区域,可以激发出波长范围为400~700 nm的荧光,且荧光光强随时间呈现指数衰减变化。从而证实了纳秒脉冲激光的照射加工改变了硅材料的光学属性,为利用脉冲激光加工制备硅基光电器件和结构进行了探索。 展开更多
关键词 激光技术 纳秒脉冲激光 微加工 荧光检测 硅(100)
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带隙法测定SiGe/Si材料的应变状态 被引量:3
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作者 成步文 姚飞 +6 位作者 薛春来 张建国 李传波 毛容伟 左玉华 罗丽萍 王启明 《物理学报》 SCIE EI CAS CSCD 北大核心 2005年第9期4350-4353,共4页
从固体模型理论的结果出发,计算了生长于Si(100)衬底上x值小于0.85的Si1-xGex合金材料(能带结构为类Si结构)的间接带隙与应变的关系,结果表明,应变的SiGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果,提出... 从固体模型理论的结果出发,计算了生长于Si(100)衬底上x值小于0.85的Si1-xGex合金材料(能带结构为类Si结构)的间接带隙与应变的关系,结果表明,应变的SiGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果,提出了用测量带隙来间接测定SiGeSi应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应变状态下的SiGeSi多量子阱材料的应变弛豫度,两者可以较好的符合,表明带隙法测量SiGe应变弛豫度是可行的. 展开更多
关键词 siGE合金 应变 带隙 siGE/si 合金材料 间接测定 带隙 si1-XGEX x射线双晶衍射法 si(100) 应变弛豫
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Nb_5N_6 thin film on silicon and silicon oxide: A good material for terahertz detection 被引量:5
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作者 LU XueHui HE Ning KANG Lin CHEN Jian JIN BiaoBing WU PeiHeng 《Chinese Science Bulletin》 SCIE EI CAS 2009年第18期3344-3346,共3页
Voltage responsivity of bolometer will benefit from high temperature coefficient of resistance (TCR) of the material. The Nb5N6 thin solid films we proposed in this paper have high TCR, compared with the commonly-used... Voltage responsivity of bolometer will benefit from high temperature coefficient of resistance (TCR) of the material. The Nb5N6 thin solid films we proposed in this paper have high TCR, compared with the commonly-used materials such as Nb and Bi. The films were sputtered on Si(100), SiO2/Si(100), SiO2 substrates by using radio frequency (rf) magnetron sputtering. The deposition conditions have been optimized to get high TCR. The highest TCR is over 0.91% K-1 at 300 K and up to 4.5% K -1―7% K-1 at 78 K, which is good enough to be used in terahertz detection and thermometer fabrication in the range from 78 K to 300 K. 展开更多
关键词 常用材料 二氧化硅 太赫兹 检测 薄膜 si(100) 电阻温度系数 磁控溅射
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Si(100)和蓝宝石(0001)衬底上3C-SiC的Raman研究(英文) 被引量:4
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作者 孙国胜 罗木昌 +5 位作者 王雷 赵万顺 孙艳玲 曾一平 李晋闽 林兰英 《发光学报》 EI CAS CSCD 北大核心 2003年第4期421-425,共5页
单晶Si和蓝宝石 (0 0 0 1)是两种重要的 3C SiC异质外延衬底材料 ,然而 ,由于Si及蓝宝石和 3C SiC之间大的晶格失配度和热膨胀系数失配度 ,在 3C SiC中会产生很大的内应力 ,直接影响 3C SiC的电学特性。Raman散射测试是一个功能很强的... 单晶Si和蓝宝石 (0 0 0 1)是两种重要的 3C SiC异质外延衬底材料 ,然而 ,由于Si及蓝宝石和 3C SiC之间大的晶格失配度和热膨胀系数失配度 ,在 3C SiC中会产生很大的内应力 ,直接影响 3C SiC的电学特性。Raman散射测试是一个功能很强的测试方法 ,其强度、宽度、Raman位移等有关Raman参数可以给出有关SiC晶体质量的信息 ,其中包括内应力。利用背散射几何构置的Raman方法研究了Si(10 0 )和蓝宝石 (0 0 0 1)衬底上LPCVD方法生长的SiC外延薄膜 ,在生长的所有样品中均观察到了典型的 3C SiC的TO和LO声子峰 ,在3C SiC/Si材料中 ,这两个声子峰分别位于 970 3cm-1和 796 0cm-1,在 3C SiC/蓝宝石材料中 ,分别位于96 5 1cm-1和 80 1 2cm-1,这一结果表明这两种外延材料均为 3C SiC晶型。利用一个 3C SiC自由膜作为无应力标准样品 ,并根据 3C SiC/Si和 3C SiC/蓝宝石的TO和LO声子峰Raman位移相对于自由膜的移动量 ,得到 3C SiC中的内应力约分别为 1GPa和 4GPa。实验发现在这两种材料的TO声子峰的Raman位移移动方向相反 ,通过比较 3C SiC、Si和蓝宝石的热膨胀系数 ,预期Si衬底上的 3C SiC外延膜受到的应力为张应力 ,而蓝宝石衬底上 3C SiC受到的应力则为压应力。 展开更多
关键词 3C-siC 碳化硅 拉曼光谱 RAMAN光谱 蓝宝石(0001)衬底 晶格失配度 热膨胀系数失配度 背散射
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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect
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作者 冯亚辉 郭红霞 +7 位作者 刘益维 欧阳晓平 张晋新 马武英 张凤祁 白如雪 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第1期554-562,共9页
The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi... The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents. 展开更多
关键词 silicon–germanium heterojunction bipolar transistor(si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE)
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Ti/Si(100)样品在快速退火(RTA)时的界面反应的研究 被引量:4
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作者 朱永法 曹立礼 +1 位作者 林惠旺 陈立 《真空科学与技术》 CSCD 1993年第1期34-42,共9页
运用俄歇电子能谱(AES)、X射线光电子能谱(XPS)以及卢瑟福背散射谱(RBS)研究了Ti/Si(100)样品在快速热退火(RTA)过程中的界面反应机理及物种分布。研究结果表明,Ti/Si(100)样品在600℃快速热退火10s后,界面上的钛和硅就发生了明显的界... 运用俄歇电子能谱(AES)、X射线光电子能谱(XPS)以及卢瑟福背散射谱(RBS)研究了Ti/Si(100)样品在快速热退火(RTA)过程中的界面反应机理及物种分布。研究结果表明,Ti/Si(100)样品在600℃快速热退火10s后,界面上的钛和硅就发生了明显的界面反应,形成了TiSi_2金属硅化物相。在750℃RTA后,TiSi_2相已基本形成完善,再提高RTA温度,TiSi_2相增加甚少。快速热退火过程不同于一般的慢退火过程,主要通过TiSi_2晶格传递Si,从而促使界面处的钛和硅的继续反应。界面扩散的速度很快,TiSi_2物相的形成速度由Ti和Si的反应速度限制,不受Si扩散效应的影响。此外,俄歇线形分析还揭示了,在硅化物的形成过程中,钛硅物相在各界面层中的存在形式。 展开更多
关键词 TI si(100) 退火 界面反应 硅化钛
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用低能电子衍射研究氢在Si(100)表面吸附引起的相变 被引量:1
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作者 胡晓明 林彰达 《物理学报》 SCIE EI CAS CSCD 北大核心 1996年第6期985-989,共5页
描述了用低能电子衍射(LEED)研究不同温度下在Si(100)-c(8×8)表面吸氢引起的一系列相变过程。实验发现:在液氮温度下,在Si(100)-c(8×8)表面连续吸氢将引起表面经Si(100)-(4×1)-H向(2×1)-H最终向(1×1)-H转变;... 描述了用低能电子衍射(LEED)研究不同温度下在Si(100)-c(8×8)表面吸氢引起的一系列相变过程。实验发现:在液氮温度下,在Si(100)-c(8×8)表面连续吸氢将引起表面经Si(100)-(4×1)-H向(2×1)-H最终向(1×1)-H转变;而在从700℃到室温间的不同温度下饱和吸氢,实验中观察到:Si(100)-c(8×8)表面将先转变至Si(100)-c(4×4)-H,然后至(2×1)-最终至(1×1)-H。 展开更多
关键词 低能电子衍射 si(100) 表面物理
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Square ZnO nano-column and its thermal evolution 被引量:2
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作者 HUANG BinWang, ZHAN HuaHan, WU YaPing, CHEN XiaoHang & KANG JunYong Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China 《Science China(Technological Sciences)》 SCIE EI CAS 2010年第2期309-312,共4页
Square ZnO nano-columns have been manufactured by molecular beam epitaxy on p-type Si (100) substrate. The morphology and the evolution sequences after thermal annealing were investigated by in-situ scanning tunneling... Square ZnO nano-columns have been manufactured by molecular beam epitaxy on p-type Si (100) substrate. The morphology and the evolution sequences after thermal annealing were investigated by in-situ scanning tunneling microscopy. We associated the morphology and microstructure evolution with the cubic Si (100) substrate, large lattice mismatching, the coexistence of wurtzite and zincblende phases of ZnO, and the thermal effect. 展开更多
关键词 ZNO SQUARE nano-column anneal wurtzite PHASE ZINCBLENDE PHASE si (100)
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硅基HA/Al_2O_3复合生物涂层的制备与表征 被引量:2
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作者 吴振军 杨妍 +1 位作者 陈宗璋 李素芳 《功能材料》 EI CAS CSCD 北大核心 2008年第8期1355-1358,共4页
通过磁控溅射沉积、阳极氧化与溶胶-凝胶结合的多步技术在Si(100)表面制备了HA/Al_2O_3复合生物涂层材料。采用TG-DSC测定了复合涂层中HA外层的烧成温度,采用XRD、FT-IR以及EDS分析了Si(100)基HA/Al_2O_3复合生物涂层的组成,并借助SEM... 通过磁控溅射沉积、阳极氧化与溶胶-凝胶结合的多步技术在Si(100)表面制备了HA/Al_2O_3复合生物涂层材料。采用TG-DSC测定了复合涂层中HA外层的烧成温度,采用XRD、FT-IR以及EDS分析了Si(100)基HA/Al_2O_3复合生物涂层的组成,并借助SEM研究了复合涂层的表面与截面的微观形貌。研究表明,凝胶完全转变为HA外层的最低温度约为550℃,凝胶经600℃处理30min后可在Si(100)- Al_2O_3基上形成具有一定数量纳米细孔且含有少量CO_3的HA外层;HA外层嵌入Si(100)基阳极氧化Al_2O_3多孔层的孔洞中构成HA/Al_2O_3复合生物涂层。 展开更多
关键词 si(100) HA/Al2O3 复合生物涂层 阳极氧化 溶胶-凝胶
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金刚石膜在Si(100)衬底上的选择沉积 被引量:2
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作者 常开朋 程文娟 +3 位作者 江锦春 张阳 朱鹤孙 沈德忠 《人工晶体学报》 EI CAS CSCD 北大核心 2003年第6期610-612,共3页
采用自行设计的微波等离子体化学气相沉积系统,利用铜网作为模板实现了在sj(100)衬底上金刚石膜的选择沉积。用场发射扫描电子显微镜(SEM)、Raman散射谱对样品进行了表征与分析。并与同样生长条件下未采用模板时得到的金刚石样品进行了... 采用自行设计的微波等离子体化学气相沉积系统,利用铜网作为模板实现了在sj(100)衬底上金刚石膜的选择沉积。用场发射扫描电子显微镜(SEM)、Raman散射谱对样品进行了表征与分析。并与同样生长条件下未采用模板时得到的金刚石样品进行了比较。结果发现,采用模板后,金刚石膜的成核密度和质量都得到很大提高。 展开更多
关键词 金刚石膜 si(100) 硅衬底 微波等离子体化学气相沉积 铜网 模板 选择沉积
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Structure and magneto-electrical properties of Fe-C films prepared by magnetron sputtering 被引量:3
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作者 MA Lei LIU ZhongWu +3 位作者 ZENG DeChang YU HongYa ZHONG XiaPing ZHANG XiaoZhong 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第9期1594-1598,共5页
Fe-doped amorphous FexCl~ granular films were prepared on n-Si (100) substrates by d.c. magnetron sputtering. The structur- al properties of FexC1-x films were investigated by X-ray diffraction (XRD), atomic force... Fe-doped amorphous FexCl~ granular films were prepared on n-Si (100) substrates by d.c. magnetron sputtering. The structur- al properties of FexC1-x films were investigated by X-ray diffraction (XRD), atomic force microscope (AFM) and Raman spec- troscopy. The results show that the iron and carbon of as-deposited films are in amorphous state, and the FexC1-x films are di- amond-like carbon (DLC) films. After doping iron into the DLC films, a smooth surface morphology of the FexC1-x films has been obtained with the surface roughness Ra of about 0.231 nm for x=18at%. The FexC1-x films have good soft magnetic prop- erties with the coercivity of approximately 20 Oe. A high positive magnetoresistance (MR) up to 93% with x=lat% was ob- served in a FexCl-x granular film at 300 K. The resistance characteristic of Fe-C films is changed at about 230 K and the positive MR effect can be understood by the p-n heterojunction theory. 展开更多
关键词 carbon films Fe-doped DLC films MAGNETOREsiSTANCE magnetron sputtering
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Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si (111) Substrate
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作者 薛宪营 王玉柱 +5 位作者 贾全杰 王勇 陈雨 姜晓明 朱燕艳 蒋最敏 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第6期1649-1652,共4页
Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing... Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor ell and the strain relaxation degree ε are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic. 展开更多
关键词 ATOMIC-LAYER DEPOsiTION ERBIUM OXIDE-FILMS GROWTH si(100) siLICON si(001)
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A direct atomic layer deposition method for growth of ultra-thin lubricant tungsten disulfide films 被引量:2
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作者 SUN YongFeng CHAI ZhiMin +1 位作者 LU XinChun HE DanNong 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2017年第1期51-57,共7页
We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide (WS2) films. The WS2 films were deposited on a Si (100) substrate and a zinc sulfide (ZnS) film coated the Si (100) subs... We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide (WS2) films. The WS2 films were deposited on a Si (100) substrate and a zinc sulfide (ZnS) film coated the Si (100) substrate using tungsten hexacarbonyl and hydrogen sulfide as precursors. The ZnS film served as an intermediate layer to facilitate the nucleation and growth of the WS2 films. The thickness of the WS2 films was measured via scanning electron microscope, the microstructure was probed with an X-ray diffractometer and a transmission electron microscope. The friction coefficient was measured with a ball-on-disk tester under dry nitrogen. The results reveal that the WS2 films deposited on both substrates are N175 nm and have (002) and (101) crystal orientations. The WS2 film deposited on the ZnS coated Si substrate exhibits a stronger (002) orientation and a denser crystal structure than that deposited on the Si substrate. The WS2 films on both substrates have low friction coefficients. How- ever, due to the stronger (002) orientation and denser crystal structure, the friction coefficient of the WS2 film deposited on ZnS coated Si substrate is smaller with longer wear life. 展开更多
关键词 atomic layer deposition tungsten disulfide crystal orientation FRICTION
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基于SI1000的无线数据采集系统的设计 被引量:1
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作者 陈北辰 施延林 《吉林化工学院学报》 CAS 2012年第11期104-108,共5页
提出了一种基于Si1000无线片上系统的数据采集系统的设计方法,详细阐述了系统结构、节点的软硬件设计方案及射频电路关键参数的选择.节点采用电池供电,非常适合户外近距离无线数据采集的应用,并可以通过上位机监控程序实现对数据的采集... 提出了一种基于Si1000无线片上系统的数据采集系统的设计方法,详细阐述了系统结构、节点的软硬件设计方案及射频电路关键参数的选择.节点采用电池供电,非常适合户外近距离无线数据采集的应用,并可以通过上位机监控程序实现对数据的采集及对各节点收发动作的控制. 展开更多
关键词 si1000 EZRadioPro 数据采集 LABVIEW
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Si(100)衬底上制备液氮温区超导薄膜
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作者 胡倾宇 赵航炜 +2 位作者 闻立时 王永忠 乔桂文 《金属学报》 SCIE EI CAS CSCD 北大核心 1989年第3期B218-B220,共3页
本文报道用离子束溅射法在单晶Si(100)衬底上沉积YBaCuO超导薄膜的实验结果。Y稳定ZrO_2层作为衬底和超导膜的中间层,具有良好的扩散阻止效果。薄膜具有强烈的c轴织构,其化学组成接近123相。薄膜的超导起始转变温度为100K,零电阻温度为... 本文报道用离子束溅射法在单晶Si(100)衬底上沉积YBaCuO超导薄膜的实验结果。Y稳定ZrO_2层作为衬底和超导膜的中间层,具有良好的扩散阻止效果。薄膜具有强烈的c轴织构,其化学组成接近123相。薄膜的超导起始转变温度为100K,零电阻温度为78K。 展开更多
关键词 超导薄膜 si(100) si衬底 超导材料
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Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition
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作者 相文峰 吕惠宾 +3 位作者 颜雷 何萌 周岳亮 陈正豪 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第2期467-469,共3页
We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the... We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics. 展开更多
关键词 AMORPHOUS LAALO3 THIN-FILMS OXIDATION siLICON si(100)
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Si(100)表面吸附Sr的建模与第一性原理计算
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作者 李松 李克 +1 位作者 姚立峰 周耐根 《人工晶体学报》 EI CAS CSCD 北大核心 2015年第5期1363-1369,1382,共8页
为了研究Sr在Si(100)表面的稳定吸附结构和吸附特性,采用基于密度泛函理论的第一性原理平面波赝势法,通过改变Sr在Si(100)表面的覆盖度和吸附位置,计算了Si(100)表面吸附Sr的吸附能、电子态密度、电子布居、电荷密度和差分电荷密度。计... 为了研究Sr在Si(100)表面的稳定吸附结构和吸附特性,采用基于密度泛函理论的第一性原理平面波赝势法,通过改变Sr在Si(100)表面的覆盖度和吸附位置,计算了Si(100)表面吸附Sr的吸附能、电子态密度、电子布居、电荷密度和差分电荷密度。计算结果表明,三种吸附位置中,空位的吸附能最低,Sr与Si(100)表面的作用力最大,结构最稳定;覆盖度越低,吸附能越小,Sr与Si(100)表面的作用力越大,吸附结构越稳定。Sr、Si原子间的作用力主要由Sr的3d轨道电子和Si的3s、3p轨道电子杂化耦合作用(d-sp3杂化)贡献,包括共价键和离子键。共价键和离子键的强度均随覆盖度增大而减弱,这可能是由于Sr与Sr之间的排斥力减弱了Sr与Si之间的作用力,并且这种排斥力随覆盖度增大而增大。 展开更多
关键词 si(100) SR 吸附 第一性原理
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Instrumentation and application of the ion beam analysis line of the in situ ion beam system 被引量:1
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作者 黄志宏 张早娣 +2 位作者 王泽松 王浪平 付德君 《Nuclear Science and Techniques》 SCIE CAS CSCD 2015年第1期19-24,共6页
An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering(RBS), elastic recoil detection(ERD), nuclear reaction analysis(NRA) and channeling measurements. The syste... An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering(RBS), elastic recoil detection(ERD), nuclear reaction analysis(NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, Bi Fe O3:La/Si,Mo C/Mo/Si and Ti BN/Si samples. RBS of a Bi Fe O3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity(χmin= 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a Mo C/Mo/Si and Ti BN film samples were analyzed by RBS and non-Rutherford elastic backscattering. 展开更多
关键词 离子束系统 应用程序 si(100) 分析线 原位 仪器 弹性反冲探测 BIFEO3
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CrN films deposited by ion source-assisted magnetron sputtering 被引量:1
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作者 LIU Chuansheng TIAN Canxin +5 位作者 LI Ming HE Jun YANG HuiJuan YANG Bing WANG Hong Jun FU Dejun 《Nuclear Science and Techniques》 SCIE CAS CSCD 2010年第5期289-293,共5页
CrN coatings were deposited on Si(100) and piston rings by ion source assisted 40 kHz magnetron sputtering.Structure and composition of the coatings were characterized by X-ray diffraction,atomic force microscopy,scan... CrN coatings were deposited on Si(100) and piston rings by ion source assisted 40 kHz magnetron sputtering.Structure and composition of the coatings were characterized by X-ray diffraction,atomic force microscopy,scanning electron microscopy and transmission electron microscopy.Mechanical and tribological properties were assessed by microhardness and pin-on-disc testing.The ion source-assisted system has a deposition rate of 3.88 μm/h,against 2.2 μm/h without ion-source assistance.The CrN coatings prepared with ion source assistance exhibited an increase in microhardness(up to 16.3 GPa) and decrease in friction coefficient(down to 0.48) at the optimized cathode source-to-substrate distance.Under optimized conditions,CrN coatings were deposited on piston rings,with a thickness of 25 μm and hardness of 17.85 GPa. 展开更多
关键词 溅射离子源 磁控溅射 氮化铬 铬薄膜 si(100) 透射电子显微镜 扫描电子显微镜 原子力显微镜
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