The self-charging concept has drawn considerable attention due to its excellent ability to achieve environmental energy harvesting,conversion and storage without an external power supply.However,most self-charging des...The self-charging concept has drawn considerable attention due to its excellent ability to achieve environmental energy harvesting,conversion and storage without an external power supply.However,most self-charging designs assembled by multiple energy harvesting,conversion and storage materials increase the energy transfer loss;the environmental energy supply is generally limited by climate and meteorological conditions,hindering the potential application of these selfpowered devices to be available at all times.Based on aerobic autoxidation of catechol,which is similar to the electrochemical oxidation of the catechol groups on the carbon materials under an electrical charge,we proposed an air-breathing chemical self-charge concept based on the aerobic autoxidation of catechol groups on oxygen-enriched carbon materials to ortho-quinone groups.Energy harvesting,conversion and storage functions could be integrated on a single carbon material to avoid the energy transfer loss among the different materials.Moreover,the assembled Cu/oxygen-enriched carbon battery confirmed the feasibility of the air-oxidation self-charging/electrical discharging mechanism for potential applications.This air-breathing chemical self-charge concept could facilitate the exploration of high-efficiency sustainable air self-charging devices.展开更多
The electronegative filling in skutterudites not only broadened the scope of filling atoms,but also facilitated the preparation of p-type skutterudites.However,the introduction of a single sulfur atom in the Co_(4)Sb_...The electronegative filling in skutterudites not only broadened the scope of filling atoms,but also facilitated the preparation of p-type skutterudites.However,the introduction of a single sulfur atom in the Co_(4)Sb_(12) cannot be achieved without charge compensation through the traditional equilibrium method.In the present study,the dual occupations of S-atoms by self-charge compensation were shown as the most stable forms under high pressure,and a series of p-type S_(y)Co_(4)Sb_(12-2y)S_(2y) skutterudites was successfully prepared by high-pressure-high-temperature(HPHT)method.The electronic structures and transport properties of as-obtained materials were investigated,and the related mechanisms were explored.The results suggested that the presence of S-impurities led to flattening of the electronic band that led to a higher Seebeck coefficient.The S-doped Co_(4)Sb_(12) displayed lower elastic modulus,elastic constant,and Debye temperature,thus indicating the chemical bond softening in skutterudites.The thermal conductivities of S_(y)Co_(4)Sb_(12-2y)S_(2y) compounds reduced monotonously with the increase in Scontent.This study provides a new and promising avenue for optimizing the thermoelectric properties of p-type Co_(4)Sb_(12).展开更多
A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-a...A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field （EI） of the dielectric buried layer and increase breakdown voltage （BV）. E1 = 600 V/μm and BV =- 237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance （Ron,sp） of 0.01319Ω·cm2, FOM （FOM = BV2/R p） of 4.26 MW/cm2 under a 11 μm length （Ld） drift region.展开更多
This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. ...This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.展开更多
基金financially supported by the National Natural Science Foundation of China(51503178,52202048,52027801)National Key R&D Program of China(2017YFA0206301)+1 种基金China-Germany Collaboration Project(M-0199)Natural Science Foundation of Hebei Province(B2021203012,E2022203082)。
文摘The self-charging concept has drawn considerable attention due to its excellent ability to achieve environmental energy harvesting,conversion and storage without an external power supply.However,most self-charging designs assembled by multiple energy harvesting,conversion and storage materials increase the energy transfer loss;the environmental energy supply is generally limited by climate and meteorological conditions,hindering the potential application of these selfpowered devices to be available at all times.Based on aerobic autoxidation of catechol,which is similar to the electrochemical oxidation of the catechol groups on the carbon materials under an electrical charge,we proposed an air-breathing chemical self-charge concept based on the aerobic autoxidation of catechol groups on oxygen-enriched carbon materials to ortho-quinone groups.Energy harvesting,conversion and storage functions could be integrated on a single carbon material to avoid the energy transfer loss among the different materials.Moreover,the assembled Cu/oxygen-enriched carbon battery confirmed the feasibility of the air-oxidation self-charging/electrical discharging mechanism for potential applications.This air-breathing chemical self-charge concept could facilitate the exploration of high-efficiency sustainable air self-charging devices.
基金the financial support from the National Natural Science Foundation of China(Grant No.51772231 and 51972253)the Fundamental Research Funds for the Central Universities(WUT:2017-YB-033,2020IB001,and 2020IB013).
文摘The electronegative filling in skutterudites not only broadened the scope of filling atoms,but also facilitated the preparation of p-type skutterudites.However,the introduction of a single sulfur atom in the Co_(4)Sb_(12) cannot be achieved without charge compensation through the traditional equilibrium method.In the present study,the dual occupations of S-atoms by self-charge compensation were shown as the most stable forms under high pressure,and a series of p-type S_(y)Co_(4)Sb_(12-2y)S_(2y) skutterudites was successfully prepared by high-pressure-high-temperature(HPHT)method.The electronic structures and transport properties of as-obtained materials were investigated,and the related mechanisms were explored.The results suggested that the presence of S-impurities led to flattening of the electronic band that led to a higher Seebeck coefficient.The S-doped Co_(4)Sb_(12) displayed lower elastic modulus,elastic constant,and Debye temperature,thus indicating the chemical bond softening in skutterudites.The thermal conductivities of S_(y)Co_(4)Sb_(12-2y)S_(2y) compounds reduced monotonously with the increase in Scontent.This study provides a new and promising avenue for optimizing the thermoelectric properties of p-type Co_(4)Sb_(12).
基金Project supported by the National Natural Science Foundation of China(No.61306094)the Project of Sichuan Provincial Education Department(No.13ZA0089)the Research Fund for the Middle and Youth Academic Leader of Chengdu University of Information Technology(No.J201301)
文摘A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field （EI） of the dielectric buried layer and increase breakdown voltage （BV）. E1 = 600 V/μm and BV =- 237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance （Ron,sp） of 0.01319Ω·cm2, FOM （FOM = BV2/R p） of 4.26 MW/cm2 under a 11 μm length （Ld） drift region.
基金Projects supported by the National Natural Science Foundation of China （Grant Nos. 60806025 and 60976060）, the National Laboratory of Analog Integrated Circuit （Grant No. 9140C0903070904）, and the Youth Teacher Foundation of the University of Electroniq Science and Technology of China （Grant No. ix0721）.
文摘This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.
