Antimony sulfide–selenide Sb2（S,Se）3,including Sb2S3and Sb2Se3,can be regarded as binary metal chalcogenides semiconductors since Sb2S3and Sb2Se3are isomorphous.They possess abundant elemental storage,nontoxicity,g...Antimony sulfide–selenide Sb2（S,Se）3,including Sb2S3and Sb2Se3,can be regarded as binary metal chalcogenides semiconductors since Sb2S3and Sb2Se3are isomorphous.They possess abundant elemental storage,nontoxicity,good stability with regard to moisture at elevated temperatures and suitable physical parameters for light absorption materials in solar cells.To date,quite a few attempts have been conducted in the materials synthesis,photovoltaic property investigation and device fabrication.Benefiting from previous investigation in thin film solar cells and new generation nanostructured solar cells,this class of materials has been applied in either sensitized-architecture or planar heterojunction solar cells.Decent power conversion efficiencies from 5%to 7.5%have been achieved.Apparently,further improvement on the efficiency is required for future practical applications.To give an overview of this research field,this paper displays some typical researches regarding the methodologies toward the antimony sulfide–selenide synthesis,development of interfacial materials and device fabrications,during which we highlight some critical findings that promote the efficiency enhancement.Finally,this paper proposes some outstanding issue regarding fundamental understanding of the materials,some viewpoints for the efficiency improvement and their future challenges in solar cell applications.展开更多
Developing high-performance anode materials for potassium-ion batteries is significantly urgent. We here demonstrate Sb_2S_3 nanoparticles(~20 nm) homogeneously dispersed in porous S,N-codoped graphene framework(Sb_2S...Developing high-performance anode materials for potassium-ion batteries is significantly urgent. We here demonstrate Sb_2S_3 nanoparticles(~20 nm) homogeneously dispersed in porous S,N-codoped graphene framework(Sb_2S_3-SNG) as a self-supported anode material for potassium-ion batteries. The rational structure design of integrating Sb_2S_3 nanoparticles with S,N-codoped graphene contributes to high reactivity, strong affinity, good electric conductivity, and robust stability of the composite, enabling superior K-storage performance. Moreover, the self-supported architecture significantly decreases the inactive weight of the battery, resulting in a high energy density of a Sb_2S_3-SNG/KVPO_4 F-C full cell to ~166.3 W h kg^(-1).展开更多
Hierarchical Sb_2S_3 hollow microspheres assembled by nanowires have been successfully synthesized by a simple and practical hydrothermal reaction. The possible formation process of this architecture was investigated ...Hierarchical Sb_2S_3 hollow microspheres assembled by nanowires have been successfully synthesized by a simple and practical hydrothermal reaction. The possible formation process of this architecture was investigated by X-ray diffraction, focused-ion beam-scanning electron microscopy dual-beam system, and transmission electron microscopy. When used as the anode material for lithium-ion batteries, Sb_2S_3 hollow microspheres manifest excellent rate property and enhanced lithium-storage capability and can deliver a discharge capacity of 674 m Ah g^(-1) at a current density of 200 m A g^(-1) after 50 cycles. Even at a high currentdensity of 5000 m A g^(-1), a discharge capacity of541 m Ah g^(-1) is achieved. Sb_2S_3 hollow microspheres also display a prominent sodium-storage capacity and maintain a reversible discharge capacity of 384 m Ah g^(-1) at a current density of 200 m A g^(-1) after 50 cycles. The remarkable lithium/sodium-storage property may be attributed to the synergetic effect of its nanometer size and three-dimensional hierarchical architecture, and the outstanding stability property is attributed to the sufficient interior void space,which can buffer the volume expansion.展开更多
Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films h...Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films have emerged,among which magnetron sputtering(MS)is one of the most commonly used vacuum techniques.For this type of technique,the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate,determining the specific growth habits of the films.Herein,the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS(MS-CdS)films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide(Sb_(2)(S,Se)_(3))solar cells.Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb_(2)(S,Se)_(3)layer that is more favorable for electron transfer.In addition,we developed an oxygen plasma treatment for CdS,reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell.This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb_(2)(S,Se)_(3)solar cells and provides interface optimization strategies to improve device performance.展开更多
The volatilization kinetics of antimony trisulfide in steam atmosphere was studied with thermogravimetry at temperatures from 923 to 1123 K. A theoretical model was developed to calculate the overall rate constant and...The volatilization kinetics of antimony trisulfide in steam atmosphere was studied with thermogravimetry at temperatures from 923 to 1123 K. A theoretical model was developed to calculate the overall rate constant and the mass transfer coefficient in gas phases. The experimental results show that the volatilization rate is enhanced with increasing temperature and steam flow rate. The volatilization rate is mainly controlled by the mass transport in gas phases. The apparent activation energy for the process is found to be 59.93 kJ/mol. It is demonstrated that Sb2S3 is dominantly oxidized into Sb2O3 and H2S by water vapor in the volatilization process. Some antimony metal is formed. The reaction mechanism is discussed in accordance with experimental data.展开更多
An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivi...An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.展开更多
Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and property.In this work,one-dimensional Sb2 S3 nanowires(NWs)with high crystallinity wer...Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and property.In this work,one-dimensional Sb2 S3 nanowires(NWs)with high crystallinity were grown via chemical vapor deposition(CVD)technique on SiO2/Si substrates.The Sb2 S3 NWs exhibited needle-like structures with inclined cross-sections.The lengths of Sb2S3 nanowires changed from 7 to 13μm.The photodetection properties of Sb2 S3 nanowires were comprehensively and systematically characterized.The Sb2S3 photodetectors show a broadband photoresponse ranging from ultraviolet(360 nm)to near-infrared(785 nm).An excellent specific detectivity of 2.1×10^(14)Jones,high external quantum efficiency of 1.5×10^(4)%,sensitivity of 2.2×10^(4)cm^(2)W^(-1)and short response time of less than 100 ms was achieved for the Sb2 S3 NW photodetectors.Moreover,the Sb2S3 NWs showed outstanding switch cycling stability that was beneficial to the practical applications.The high-quality Sb2S3 nanowires fabricated by CVD have great application potential in semiconductor and optoelectronic fields.展开更多
Sb_2S_3 is a kind of stable light absorption materials with suitable band gap, promising for practical applications. Here we demonstrate that the engineering on the composition ratio enables significant improvement in...Sb_2S_3 is a kind of stable light absorption materials with suitable band gap, promising for practical applications. Here we demonstrate that the engineering on the composition ratio enables significant improvement in the device performance. We found that the co-evaporation of sulfur or antimony with Sb_2S_3 is able to generate sulfur-or antimony-rich Sb_2S_3. This composition does not generate essential influence on the crystal structure, optical band and film formability, while the carrier concentration and transport dynamics are considerably changed. The device investigations show that sulfur-rich Sb_2S_3 film is favorable for efficient energy conversion, while antimony-rich Sb_2S_3 leads to greatly decreased device performance. With optimizations on the sulfur-rich Sb_2S_3 films, the final power conversion efficiency reaches5.8%, which is the highest efficiency in thermal evaporation derived Sb_2S_3 solar cells.展开更多
基金supported by the Recruitment Program of Global Expertsthe Fundamental Research Funds for the Central Universities(Nos.WK2060140022,WK2060140023 and WK2060140024)
文摘Antimony sulfide–selenide Sb2（S,Se）3,including Sb2S3and Sb2Se3,can be regarded as binary metal chalcogenides semiconductors since Sb2S3and Sb2Se3are isomorphous.They possess abundant elemental storage,nontoxicity,good stability with regard to moisture at elevated temperatures and suitable physical parameters for light absorption materials in solar cells.To date,quite a few attempts have been conducted in the materials synthesis,photovoltaic property investigation and device fabrication.Benefiting from previous investigation in thin film solar cells and new generation nanostructured solar cells,this class of materials has been applied in either sensitized-architecture or planar heterojunction solar cells.Decent power conversion efficiencies from 5%to 7.5%have been achieved.Apparently,further improvement on the efficiency is required for future practical applications.To give an overview of this research field,this paper displays some typical researches regarding the methodologies toward the antimony sulfide–selenide synthesis,development of interfacial materials and device fabrications,during which we highlight some critical findings that promote the efficiency enhancement.Finally,this paper proposes some outstanding issue regarding fundamental understanding of the materials,some viewpoints for the efficiency improvement and their future challenges in solar cell applications.
基金supported by the National Natural Science Foundation of China (21231005, 51231003)the Program of Introducing Talents of Discipline to Universities of China (B12015)
文摘Developing high-performance anode materials for potassium-ion batteries is significantly urgent. We here demonstrate Sb_2S_3 nanoparticles(~20 nm) homogeneously dispersed in porous S,N-codoped graphene framework(Sb_2S_3-SNG) as a self-supported anode material for potassium-ion batteries. The rational structure design of integrating Sb_2S_3 nanoparticles with S,N-codoped graphene contributes to high reactivity, strong affinity, good electric conductivity, and robust stability of the composite, enabling superior K-storage performance. Moreover, the self-supported architecture significantly decreases the inactive weight of the battery, resulting in a high energy density of a Sb_2S_3-SNG/KVPO_4 F-C full cell to ~166.3 W h kg^(-1).
基金supported financially by the National Natural Foundation of China(Grant No.51672234)the Research Foundation for Hunan Youth Outstanding People from Hunan Provincial Science and Technology Department(2015RS4030)+1 种基金Hunan 2011 Collaborative Innovation Center of Chemical Engineering&Technology with Environmental Benignity and Effective Resource UtilizationProgram for Innovative Research Cultivation Team in University of Ministry of Education of China(1337304)
文摘Hierarchical Sb_2S_3 hollow microspheres assembled by nanowires have been successfully synthesized by a simple and practical hydrothermal reaction. The possible formation process of this architecture was investigated by X-ray diffraction, focused-ion beam-scanning electron microscopy dual-beam system, and transmission electron microscopy. When used as the anode material for lithium-ion batteries, Sb_2S_3 hollow microspheres manifest excellent rate property and enhanced lithium-storage capability and can deliver a discharge capacity of 674 m Ah g^(-1) at a current density of 200 m A g^(-1) after 50 cycles. Even at a high currentdensity of 5000 m A g^(-1), a discharge capacity of541 m Ah g^(-1) is achieved. Sb_2S_3 hollow microspheres also display a prominent sodium-storage capacity and maintain a reversible discharge capacity of 384 m Ah g^(-1) at a current density of 200 m A g^(-1) after 50 cycles. The remarkable lithium/sodium-storage property may be attributed to the synergetic effect of its nanometer size and three-dimensional hierarchical architecture, and the outstanding stability property is attributed to the sufficient interior void space,which can buffer the volume expansion.
基金supported by the National Natural Science Foundation of China(22275180)the National Key Research and Development Program of China(2019YFA0405600)the Collaborative Innovation Program of Hefei Science Center,CAS,and the University Synergy Innovation Program of Anhui Province(GXXT-2023-031).
文摘Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films have emerged,among which magnetron sputtering(MS)is one of the most commonly used vacuum techniques.For this type of technique,the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate,determining the specific growth habits of the films.Herein,the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS(MS-CdS)films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide(Sb_(2)(S,Se)_(3))solar cells.Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb_(2)(S,Se)_(3)layer that is more favorable for electron transfer.In addition,we developed an oxygen plasma treatment for CdS,reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell.This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb_(2)(S,Se)_(3)solar cells and provides interface optimization strategies to improve device performance.
基金This work was supported by the National Natural Science Foundation of China under grant No.59964001.
文摘The volatilization kinetics of antimony trisulfide in steam atmosphere was studied with thermogravimetry at temperatures from 923 to 1123 K. A theoretical model was developed to calculate the overall rate constant and the mass transfer coefficient in gas phases. The experimental results show that the volatilization rate is enhanced with increasing temperature and steam flow rate. The volatilization rate is mainly controlled by the mass transport in gas phases. The apparent activation energy for the process is found to be 59.93 kJ/mol. It is demonstrated that Sb2S3 is dominantly oxidized into Sb2O3 and H2S by water vapor in the volatilization process. Some antimony metal is formed. The reaction mechanism is discussed in accordance with experimental data.
基金supported by the National Natural Science Foundation of China (22005293, U19A2092 and 22275180)the National Key Research and Development Program of China (2019YFA0405600)+1 种基金the Institute of Energy, Hefei Comprehensive National Science Center (21KZS212)the Collaborative Innovation Program of Hefei Science Center, CAS。
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 12261141662, 12074311, and 12004310)。
文摘An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.
基金supported by the National Fund for Fostering Talents of Basic Science (J1103212)the Foundation for Outstanding Young Scientist in Shandong Province (BS2010CL036)~~
基金supported by the National Natural Science Foundation of China(51732010,51972280,51672240,51801175)。
文摘Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and property.In this work,one-dimensional Sb2 S3 nanowires(NWs)with high crystallinity were grown via chemical vapor deposition(CVD)technique on SiO2/Si substrates.The Sb2 S3 NWs exhibited needle-like structures with inclined cross-sections.The lengths of Sb2S3 nanowires changed from 7 to 13μm.The photodetection properties of Sb2 S3 nanowires were comprehensively and systematically characterized.The Sb2S3 photodetectors show a broadband photoresponse ranging from ultraviolet(360 nm)to near-infrared(785 nm).An excellent specific detectivity of 2.1×10^(14)Jones,high external quantum efficiency of 1.5×10^(4)%,sensitivity of 2.2×10^(4)cm^(2)W^(-1)and short response time of less than 100 ms was achieved for the Sb2 S3 NW photodetectors.Moreover,the Sb2S3 NWs showed outstanding switch cycling stability that was beneficial to the practical applications.The high-quality Sb2S3 nanowires fabricated by CVD have great application potential in semiconductor and optoelectronic fields.
基金supported by the Fundamental Research Funds for the Central Universities(WK2060140023,CX3430000001,and WK2060140024)the Major/Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology(2016FXZY003)the National Natural Science Foundation of China(U1732150)
文摘Sb_2S_3 is a kind of stable light absorption materials with suitable band gap, promising for practical applications. Here we demonstrate that the engineering on the composition ratio enables significant improvement in the device performance. We found that the co-evaporation of sulfur or antimony with Sb_2S_3 is able to generate sulfur-or antimony-rich Sb_2S_3. This composition does not generate essential influence on the crystal structure, optical band and film formability, while the carrier concentration and transport dynamics are considerably changed. The device investigations show that sulfur-rich Sb_2S_3 film is favorable for efficient energy conversion, while antimony-rich Sb_2S_3 leads to greatly decreased device performance. With optimizations on the sulfur-rich Sb_2S_3 films, the final power conversion efficiency reaches5.8%, which is the highest efficiency in thermal evaporation derived Sb_2S_3 solar cells.
