Purpose The Self Powered Neutrons Detectors(SPND)have the advantage of not requiring a high voltage power supply for their operation and are small in size,enhancing the interest of these detectors in medicine.Methods ...Purpose The Self Powered Neutrons Detectors(SPND)have the advantage of not requiring a high voltage power supply for their operation and are small in size,enhancing the interest of these detectors in medicine.Methods In this context,we have developed a thermal neutron detection system based on SPND.This detector was placed in the thermal channel of our nuclear research reactor;where the values of the current for each detector have been recorded as a function of time,with a chain in a current mode where electrometers without HV were used.Results We performed the real-time measurement of neutron flux during boron neutron capture therapy or boron neutron therapy,the different materials constituting the SPND detectors have been carefully chosen for this application.These detectors were tested at a power of four MW corresponding to a neutron flux of 10^(9) n cm^(−2) s^(−1).Conclusions The usefulness of 103Rh-SPND is for online measurement of thermal neutron flux on BNCT patients has been demonstrated based on an appropriate calibration of the thermal neutron spectrum.展开更多
By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conductio...By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current–voltage(I–V) tests and electroluminescence spectra.Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.展开更多
文摘Purpose The Self Powered Neutrons Detectors(SPND)have the advantage of not requiring a high voltage power supply for their operation and are small in size,enhancing the interest of these detectors in medicine.Methods In this context,we have developed a thermal neutron detection system based on SPND.This detector was placed in the thermal channel of our nuclear research reactor;where the values of the current for each detector have been recorded as a function of time,with a chain in a current mode where electrometers without HV were used.Results We performed the real-time measurement of neutron flux during boron neutron capture therapy or boron neutron therapy,the different materials constituting the SPND detectors have been carefully chosen for this application.These detectors were tested at a power of four MW corresponding to a neutron flux of 10^(9) n cm^(−2) s^(−1).Conclusions The usefulness of 103Rh-SPND is for online measurement of thermal neutron flux on BNCT patients has been demonstrated based on an appropriate calibration of the thermal neutron spectrum.
基金supported by the National Natural Science Foundation of China (Grant Nos. U2141241, 62004099, 61921005,and 91850112)。
文摘By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current–voltage(I–V) tests and electroluminescence spectra.Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.
