In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about t...In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about the toxicity of lead in lead halide perovskites. CH3NH3SnI3 emerges as a viable alternative to CH3NH3PbX3. In this work, we studied the effect of various parameters on the performance of lead-free perovskite solar cells using simulation with the SCAPS 1D software. The cell structure consists of α-Fe2O3/CH3NH3SnI3/PEDOT: PSS. We analyzed parameters such as thickness, doping, and layer concentration. The study revealed that, without considering other optimized parameters, the efficiency of the cell increased from 22% to 35% when the perovskite thickness varied from 100 to 1000 nm. After optimization, solar cell efficiency reaches up to 42%. The optimization parameters are such that, for example, for perovskite: the layer thickness is 700 nm, the doping concentration is 1020 and the defect density is 1013 cm−3, and for hematite: the thickness is 5 nm, the doping concentration is 1022 and the defect concentration is 1011 cm−3. These results are encouraging because they highlight the good agreement between perovskite and hematite when used as the active and electron transport layers, respectively. Now, it is still necessary to produce real, viable photovoltaic solar cells with the proposed material layer parameters.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance si...In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance simulator (SCAPS-1D) software to examine the performance of this type of organic polymer thin-film solar cell by varying the thickness of the active layer. PFN-Br interfacial layer entrenched in OPV devices gives overall enhanced open-circuit voltage, short-circuit current density and fill factor thus improving device performance. PEDOT: PSS is an electro-conductive polymer solution that has been extensively utilized in solar cell devices as a hole transport layer (HTL) due to its strong hole affinity, good thermal and mechanical stability, high work function, and high transparency in the visible range. The structure of the organic solar cell is ITO/PEDOT: PSS/BTP-4F: PBDB-T-2F/PFN-Br/Ag. Firstly, the active layer thickness was optimized to 100 nm;after that, the active-layer thickness was varied up to 900 nm. The results of these simulations demonstrated that the active layer thickness improves efficiency significantly up to 500 nm, then it decreased with increasing the thickness of the active layer from 600 nm, also notice that the short circuit current and the fill factor decrease with increasing the active layer from 600 nm, while the open voltage circuit increased with increasing the thickness of the active layer. The optimum thickness is 500 nm.展开更多
This paper presents a numerical characterization of copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program （SCAPS-1D）. We have performedan optimization of the performances of...This paper presents a numerical characterization of copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program （SCAPS-1D）. We have performedan optimization of the performances of the standard Mo/Cu（In, Ga）Se2/CdS/ZnO solar cells using current-voltage and quantum efficiency methods. With a CuIn..7Ga0.3Se2 absorber, we have investigated the buffer layer thickness, temperature, series and shunt resistances effects on the open-circuit voltage, short-circuit current density, fill factor, conversion efficiency and quantum efficiency. The simulated results show good performances when the thickness of the buffer layer is in the range of 10-40 um due to the reduction of absorption in the short wavelenghts （380-500 nm）. High performances of the model is obtained when the series and shunt resistances is in the range of 0.1-1 Ω·cm^2 and 1,000 Ω·cm^2, respectively. Under these conditions, the cell can theoretically operate under an ambiant temperature of 370 K without any loss of its performances.展开更多
Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency a...Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS<sub>2</sub> as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (V<sub>oc</sub>), short- circuit current density (J<sub>sc</sub>), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, J<sub>SC</sub> of 32.53 mA/cm<sup>2</sup>, V<sub>oc</sub> of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, V<sub>oc</sub> of 0.898 V, J<sub>SC</sub> of 31.56 mA/cm<sup>2</sup>, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS<sub>2</sub> as a BSF and CdS as a buffer layer in high-performance, cost-eff展开更多
Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, ...Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10<sup>14</sup> cm<sup>-3</sup>. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J<sub>SC</sub>), open circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.展开更多
In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance sim...In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.展开更多
In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of ...In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of the lead halide perovskite. CH3NH3SnI3 is a viable alternative to CH3NH3PbX3. In this work,?we designed a tin-based perovskite simulated model with the novel architecture of (TCO)/buffer (TiO2)/absorber (Perovskite)/hole transport material (HTM) and analyzed using the solar cell capacitance simulator (SCAPS-1D), which is well adapted to study the photovoltaic architectures. In the paper, we studied the influences of perovskite thickness and the doping concentration on the solar cell performance through theoretical analysis and device simulation. The results are indicating that the lead-free CH3NH3SnI3 is having the greatpotential to be an absorber layer with suitable inorganic hole transport materials?like CuI (PCE: 23.25%), Cu2O (PCE: 19.17%), organic hole transport materials?like spiro-OMETAD (PCE: 23.76%) and PTAA (PCE: 23.74%) to achieve high?efficiency. This simulation model will become a good guide for the fabrication?of high efficiency tin-based perovskite solar. The results show that the lead-free CH3NH3SnI3 is a potential environmentally friendly solar cells with high efficiency.展开更多
In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the...In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.展开更多
In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as J<sub>sc</sub>, V<sub>oc</sub>, QE and η of the quaternary system C...In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as J<sub>sc</sub>, V<sub>oc</sub>, QE and η of the quaternary system Cu(In,Ga)Se<sub>2</sub> solar cells. The performance of Cu(In,Ga)Se<sub>2</sub>solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: J<sub>SC</sub> = 34.6 mA/cm<sup>2</sup>, V<sub>OC</sub> = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density J<sub>SC</sub>. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.展开更多
The paper reported the design and thorough analysis of a thin-film solar cell (TFSC) based on molybdenum disulfide (MoS<sub>2</sub>) with an integrated Copper(I) Oxide (Cu<sub>2</sub>O) hole tr...The paper reported the design and thorough analysis of a thin-film solar cell (TFSC) based on molybdenum disulfide (MoS<sub>2</sub>) with an integrated Copper(I) Oxide (Cu<sub>2</sub>O) hole transport layer (HTL), employing the one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D) software. By varying crucial parameters such as absorber layer thickness, doping density, and bulk defect density, as well as HTL thickness, doping concentration, and electron affinity, defect density at ZnO/absorber and absorber/Cu<sub>2</sub>O interfaces, and operating temperature, we explored key photovoltaic measures including open circuit voltage (Voc), short-circuit current density (Jsc), fill-factor (FF), and power conversion efficiency (PCE) of the hetero-junction solar cell. The study demonstrated an efficiency of 18.87% for the MoS<sub>2</sub> solar cell without HTL, while the proposed solar cell (SC) utilizing Cu<sub>2</sub>O HTL and optimized device structure exhibited a remarkable PCE of 26.70%. The outcomes derived from the present study offer valuable insights for the progress of a highly efficient and economically viable MoS<sub>2</sub> hetero-junction TFSC.展开更多
The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variatio...The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.展开更多
Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devic...Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devices: open-circuit?voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),?areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion?efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This?result is validated by experimental results?(20%). At 300 K, when the thickness?of?the buffer layer (CdS, ZnS, ZnSe,?InSe2) increases from 100 nm to 500?nm,?with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,?with the other parameters maintained?constant, both open circuit voltage and conversion efficiency also decrease.?The?effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases?of 3% than a single buffer CdS.展开更多
文摘In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about the toxicity of lead in lead halide perovskites. CH3NH3SnI3 emerges as a viable alternative to CH3NH3PbX3. In this work, we studied the effect of various parameters on the performance of lead-free perovskite solar cells using simulation with the SCAPS 1D software. The cell structure consists of α-Fe2O3/CH3NH3SnI3/PEDOT: PSS. We analyzed parameters such as thickness, doping, and layer concentration. The study revealed that, without considering other optimized parameters, the efficiency of the cell increased from 22% to 35% when the perovskite thickness varied from 100 to 1000 nm. After optimization, solar cell efficiency reaches up to 42%. The optimization parameters are such that, for example, for perovskite: the layer thickness is 700 nm, the doping concentration is 1020 and the defect density is 1013 cm−3, and for hematite: the thickness is 5 nm, the doping concentration is 1022 and the defect concentration is 1011 cm−3. These results are encouraging because they highlight the good agreement between perovskite and hematite when used as the active and electron transport layers, respectively. Now, it is still necessary to produce real, viable photovoltaic solar cells with the proposed material layer parameters.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
文摘In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance simulator (SCAPS-1D) software to examine the performance of this type of organic polymer thin-film solar cell by varying the thickness of the active layer. PFN-Br interfacial layer entrenched in OPV devices gives overall enhanced open-circuit voltage, short-circuit current density and fill factor thus improving device performance. PEDOT: PSS is an electro-conductive polymer solution that has been extensively utilized in solar cell devices as a hole transport layer (HTL) due to its strong hole affinity, good thermal and mechanical stability, high work function, and high transparency in the visible range. The structure of the organic solar cell is ITO/PEDOT: PSS/BTP-4F: PBDB-T-2F/PFN-Br/Ag. Firstly, the active layer thickness was optimized to 100 nm;after that, the active-layer thickness was varied up to 900 nm. The results of these simulations demonstrated that the active layer thickness improves efficiency significantly up to 500 nm, then it decreased with increasing the thickness of the active layer from 600 nm, also notice that the short circuit current and the fill factor decrease with increasing the active layer from 600 nm, while the open voltage circuit increased with increasing the thickness of the active layer. The optimum thickness is 500 nm.
文摘This paper presents a numerical characterization of copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program （SCAPS-1D）. We have performedan optimization of the performances of the standard Mo/Cu（In, Ga）Se2/CdS/ZnO solar cells using current-voltage and quantum efficiency methods. With a CuIn..7Ga0.3Se2 absorber, we have investigated the buffer layer thickness, temperature, series and shunt resistances effects on the open-circuit voltage, short-circuit current density, fill factor, conversion efficiency and quantum efficiency. The simulated results show good performances when the thickness of the buffer layer is in the range of 10-40 um due to the reduction of absorption in the short wavelenghts （380-500 nm）. High performances of the model is obtained when the series and shunt resistances is in the range of 0.1-1 Ω·cm^2 and 1,000 Ω·cm^2, respectively. Under these conditions, the cell can theoretically operate under an ambiant temperature of 370 K without any loss of its performances.
文摘Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS<sub>2</sub> as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (V<sub>oc</sub>), short- circuit current density (J<sub>sc</sub>), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, J<sub>SC</sub> of 32.53 mA/cm<sup>2</sup>, V<sub>oc</sub> of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, V<sub>oc</sub> of 0.898 V, J<sub>SC</sub> of 31.56 mA/cm<sup>2</sup>, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS<sub>2</sub> as a BSF and CdS as a buffer layer in high-performance, cost-eff
文摘Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10<sup>14</sup> cm<sup>-3</sup>. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J<sub>SC</sub>), open circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.
文摘In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.
文摘In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of the lead halide perovskite. CH3NH3SnI3 is a viable alternative to CH3NH3PbX3. In this work,?we designed a tin-based perovskite simulated model with the novel architecture of (TCO)/buffer (TiO2)/absorber (Perovskite)/hole transport material (HTM) and analyzed using the solar cell capacitance simulator (SCAPS-1D), which is well adapted to study the photovoltaic architectures. In the paper, we studied the influences of perovskite thickness and the doping concentration on the solar cell performance through theoretical analysis and device simulation. The results are indicating that the lead-free CH3NH3SnI3 is having the greatpotential to be an absorber layer with suitable inorganic hole transport materials?like CuI (PCE: 23.25%), Cu2O (PCE: 19.17%), organic hole transport materials?like spiro-OMETAD (PCE: 23.76%) and PTAA (PCE: 23.74%) to achieve high?efficiency. This simulation model will become a good guide for the fabrication?of high efficiency tin-based perovskite solar. The results show that the lead-free CH3NH3SnI3 is a potential environmentally friendly solar cells with high efficiency.
文摘In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.
文摘In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as J<sub>sc</sub>, V<sub>oc</sub>, QE and η of the quaternary system Cu(In,Ga)Se<sub>2</sub> solar cells. The performance of Cu(In,Ga)Se<sub>2</sub>solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: J<sub>SC</sub> = 34.6 mA/cm<sup>2</sup>, V<sub>OC</sub> = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density J<sub>SC</sub>. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.
文摘The paper reported the design and thorough analysis of a thin-film solar cell (TFSC) based on molybdenum disulfide (MoS<sub>2</sub>) with an integrated Copper(I) Oxide (Cu<sub>2</sub>O) hole transport layer (HTL), employing the one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D) software. By varying crucial parameters such as absorber layer thickness, doping density, and bulk defect density, as well as HTL thickness, doping concentration, and electron affinity, defect density at ZnO/absorber and absorber/Cu<sub>2</sub>O interfaces, and operating temperature, we explored key photovoltaic measures including open circuit voltage (Voc), short-circuit current density (Jsc), fill-factor (FF), and power conversion efficiency (PCE) of the hetero-junction solar cell. The study demonstrated an efficiency of 18.87% for the MoS<sub>2</sub> solar cell without HTL, while the proposed solar cell (SC) utilizing Cu<sub>2</sub>O HTL and optimized device structure exhibited a remarkable PCE of 26.70%. The outcomes derived from the present study offer valuable insights for the progress of a highly efficient and economically viable MoS<sub>2</sub> hetero-junction TFSC.
文摘The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.
文摘Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devices: open-circuit?voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),?areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion?efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This?result is validated by experimental results?(20%). At 300 K, when the thickness?of?the buffer layer (CdS, ZnS, ZnSe,?InSe2) increases from 100 nm to 500?nm,?with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,?with the other parameters maintained?constant, both open circuit voltage and conversion efficiency also decrease.?The?effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases?of 3% than a single buffer CdS.
