实数编码的多目标进化算法常使用模拟二进制交叉(simulated binary crossover,称SBX)算子.通过对SBX以及进化策略中变异算子进行对比分析,并引入进化策略中的离散重组算子,提出了一种正态分布交叉(normal distribution crossover,称NDX...实数编码的多目标进化算法常使用模拟二进制交叉(simulated binary crossover,称SBX)算子.通过对SBX以及进化策略中变异算子进行对比分析,并引入进化策略中的离散重组算子,提出了一种正态分布交叉(normal distribution crossover,称NDX)算子.首先在一维搜索空间实例中对NDX与SBX算子进行比较和分析,然后将NDX算子应用于Deb等人提出的稳态多目标进化算法ε-MOEA(ε-dominance based multiobjective evolutionary algorithm)中.采用NDX算子的ε-MOEA(记为ε-MOEA/NDX)算法在多目标优化标准测试集ZDT和DTLZ的10个函数上进行了实验比较.实验结果和分析表明,采用NDX的ε-MOEA所求得的Pareto最优解集质量明显优于经典算法ε-MOEA/SBX和NSGA-Ⅱ.展开更多
The composite films of the nanocrystMline GaAs（1-x）Sbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence （PL） properties of th...The composite films of the nanocrystMline GaAs（1-x）Sbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence （PL） properties of the nanocrystalline GaAs（1-x）Sbx indicated that the PL peaks of the GaAs（1-x）Sbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystMline GaAs（1-x）Sbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.展开更多
文摘实数编码的多目标进化算法常使用模拟二进制交叉(simulated binary crossover,称SBX)算子.通过对SBX以及进化策略中变异算子进行对比分析,并引入进化策略中的离散重组算子,提出了一种正态分布交叉(normal distribution crossover,称NDX)算子.首先在一维搜索空间实例中对NDX与SBX算子进行比较和分析,然后将NDX算子应用于Deb等人提出的稳态多目标进化算法ε-MOEA(ε-dominance based multiobjective evolutionary algorithm)中.采用NDX算子的ε-MOEA(记为ε-MOEA/NDX)算法在多目标优化标准测试集ZDT和DTLZ的10个函数上进行了实验比较.实验结果和分析表明,采用NDX的ε-MOEA所求得的Pareto最优解集质量明显优于经典算法ε-MOEA/SBX和NSGA-Ⅱ.
基金Project supported by the Aeronautics Science Foundation of China （Grant No 03G51069）.
文摘The composite films of the nanocrystMline GaAs（1-x）Sbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence （PL） properties of the nanocrystalline GaAs（1-x）Sbx indicated that the PL peaks of the GaAs（1-x）Sbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystMline GaAs（1-x）Sbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.
