Electronic properties of two-dimensional(2D) materials can be strongly modulated by localized strain. The typical spatial resolution of conventional Kelvin probe force microscopy(KPFM) is usually limited in a few hund...Electronic properties of two-dimensional(2D) materials can be strongly modulated by localized strain. The typical spatial resolution of conventional Kelvin probe force microscopy(KPFM) is usually limited in a few hundreds of nanometers, and it is difficult to characterize localized electronic properties of 2D materials at nanoscales. Herein, tip-enhanced Raman spectroscopy(TERS) is proposed to combine with KPFM to break this restriction. TERS scan is conducted on ReS2bubbles deposited on a rough Au thin film to obtain strain distribution by using the Raman peak shift. The localized contact potential difference(CPD) is inversely calculated with a higher spatial resolution by using strain measured by TERS and CPD-strain working curve obtained using conventional KPFM and atomic force microscopy. This method enhances the spatial resolution of CPD measurements and can be potentially used to characterize localized electronic properties of 2D materials.展开更多
The com bination of mixed-dimensional semiconducti ng materials can provide additional freedom to construct integrated n anoscale electronic and optoelectronic devices with diverse functionalities. In this work, we re...The com bination of mixed-dimensional semiconducti ng materials can provide additional freedom to construct integrated n anoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performanee dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separati on efficie ncy of photoge nerated electro n-hole pairs can be greatly improved due to the high-quality in terfacial con tact betwee n t-Se nano belts and ReS2 films. Compared with bare ReS2 film devices, the dual-cha nnel phototra nsistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D^*) up to 98 A·W^-1 and 6 x 10^10 Jones at 400 nm illumination with an in tensity of 1.7 mW·cm^-2, respectively. Besides, the respo nse time can also be reduced by three times of magnitude to less than 50 ms due to the type-11 band alignment at the in terface. This study opens up a promising ave nue for high-performa nee photodetectors by constructing mixed-dimensional heterostructures.展开更多
Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-ele...Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-electronic applications. Herein, we show that by stacking monolayer rhenium disulfide (ReS2) on a flat gold film, the electrons doping in ReS2 can affect the in-plane anisotropic Raman enhancement of molecules adsorbed on ReS2. The change of enhancement factor and the degree of anisotropy in enhancement with layer number are sensitively dependent on the doping level of ReS2 by gold, which is further confirmed by Kelvin probe force microscopy (KPFM) measurements. These findings could open an avenue for probing anisotropic electronic interactions between molecules and 2D materials with low symmetry using Raman enhancement effect.展开更多
Layered ReS_(2) with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices.However,systematic characterizations of the...Layered ReS_(2) with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices.However,systematic characterizations of the angle-dependent photoresponse of ReS_(2) are still very limited.Here,we studied the anisotropic photoresponse of layered ReS_(2) phototransistors in depth.Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies,which are along 120°and 90°,respectively.We further measured the angle-resolved photoresponse of a ReS_(2) transistor with 6 diagonally paired electrodes.The maximum photoresponsivity exceeds 0.515 A·W^(-1) along b-axis,which is around 3.8 times larger than that along the direction perpendicular to b axis,which is consistent with the optical anisotropic directions.The incident wavelength-and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS_(2) interaction,which explains the anisotropic photoresponse.We also observed angle-dependent photoresistive switching behavior of the ReS_(2) transistor,which leads to the formation of angle-resolved phototransistor memory.It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light.This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks(ANN)in a wide spectral range of sensitivity provided by polarized light.展开更多
Regulation of optical properties and electronic structure of two-dimensionM layered ReS2 materials has attracted much attention due to their potential in electronic devices. However, the identification of structure tr...Regulation of optical properties and electronic structure of two-dimensionM layered ReS2 materials has attracted much attention due to their potential in electronic devices. However, the identification of structure transformation of monolayer ReS2 induced by strain is greatly lacking. In this work, the Raman spectra of monolayer ReS2 with external strain are determined theoretically based on the density function theory. Due to the lower structural symmetry, deformation induced by external strain can only regulate the Raman mode intensity but cannot lead to Raman mode shifts. Our calculations suggest that structural deformation induced by external strain can be identified by Raman scattering.展开更多
基金Project supported by the Zhejiang Provincial Natural Science Foundation of China (Grant No. LZ22A040003)the National Natural Science Foundation of China (Grant No. 52027809)。
文摘Electronic properties of two-dimensional(2D) materials can be strongly modulated by localized strain. The typical spatial resolution of conventional Kelvin probe force microscopy(KPFM) is usually limited in a few hundreds of nanometers, and it is difficult to characterize localized electronic properties of 2D materials at nanoscales. Herein, tip-enhanced Raman spectroscopy(TERS) is proposed to combine with KPFM to break this restriction. TERS scan is conducted on ReS2bubbles deposited on a rough Au thin film to obtain strain distribution by using the Raman peak shift. The localized contact potential difference(CPD) is inversely calculated with a higher spatial resolution by using strain measured by TERS and CPD-strain working curve obtained using conventional KPFM and atomic force microscopy. This method enhances the spatial resolution of CPD measurements and can be potentially used to characterize localized electronic properties of 2D materials.
基金National Natural Science Foundation of China (Nos. 51572057 and 51772064)AFOSR/NSF EFRI 2DARE program, ARO and SRC.
文摘The com bination of mixed-dimensional semiconducti ng materials can provide additional freedom to construct integrated n anoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performanee dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separati on efficie ncy of photoge nerated electro n-hole pairs can be greatly improved due to the high-quality in terfacial con tact betwee n t-Se nano belts and ReS2 films. Compared with bare ReS2 film devices, the dual-cha nnel phototra nsistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D^*) up to 98 A·W^-1 and 6 x 10^10 Jones at 400 nm illumination with an in tensity of 1.7 mW·cm^-2, respectively. Besides, the respo nse time can also be reduced by three times of magnitude to less than 50 ms due to the type-11 band alignment at the in terface. This study opens up a promising ave nue for high-performa nee photodetectors by constructing mixed-dimensional heterostructures.
基金National Natural Science Foundation of China (Nos. 51432002, 51720105003, 21790052, 11374355 and 21573004)the Ministry of Science and Technology of China (Nos. 2016YFA0200100 and 2015CB932400)the Beijing Municipal Science and Technology Project (No. Z161100002116026).
文摘Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-electronic applications. Herein, we show that by stacking monolayer rhenium disulfide (ReS2) on a flat gold film, the electrons doping in ReS2 can affect the in-plane anisotropic Raman enhancement of molecules adsorbed on ReS2. The change of enhancement factor and the degree of anisotropy in enhancement with layer number are sensitively dependent on the doping level of ReS2 by gold, which is further confirmed by Kelvin probe force microscopy (KPFM) measurements. These findings could open an avenue for probing anisotropic electronic interactions between molecules and 2D materials with low symmetry using Raman enhancement effect.
文摘Layered ReS_(2) with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices.However,systematic characterizations of the angle-dependent photoresponse of ReS_(2) are still very limited.Here,we studied the anisotropic photoresponse of layered ReS_(2) phototransistors in depth.Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies,which are along 120°and 90°,respectively.We further measured the angle-resolved photoresponse of a ReS_(2) transistor with 6 diagonally paired electrodes.The maximum photoresponsivity exceeds 0.515 A·W^(-1) along b-axis,which is around 3.8 times larger than that along the direction perpendicular to b axis,which is consistent with the optical anisotropic directions.The incident wavelength-and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS_(2) interaction,which explains the anisotropic photoresponse.We also observed angle-dependent photoresistive switching behavior of the ReS_(2) transistor,which leads to the formation of angle-resolved phototransistor memory.It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light.This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks(ANN)in a wide spectral range of sensitivity provided by polarized light.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61264008,61574080 and 61505085
文摘Regulation of optical properties and electronic structure of two-dimensionM layered ReS2 materials has attracted much attention due to their potential in electronic devices. However, the identification of structure transformation of monolayer ReS2 induced by strain is greatly lacking. In this work, the Raman spectra of monolayer ReS2 with external strain are determined theoretically based on the density function theory. Due to the lower structural symmetry, deformation induced by external strain can only regulate the Raman mode intensity but cannot lead to Raman mode shifts. Our calculations suggest that structural deformation induced by external strain can be identified by Raman scattering.
