Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1...Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.展开更多
Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate,sintered at different mass%ratios.According to Raman scatter...Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate,sintered at different mass%ratios.According to Raman scattering and X-ray diffraction data,the deposited hydroxyapatite coatings have a disordered structure.High-temperature treatment of the coatings in air leads to a transformation of the quasi-amorphous structure into a crystalline one.A correlation has been observed between the increase in the Ca content in the coatings and a subsequent decrease in Ca in the biphasic targets after a series of deposition processes.It was proposed that the addition of tricalcium phosphate to the targets would led to a finer coating's surface topography with the average size of 78 nm for the structural elements.展开更多
Bi_(3.25)La_(0.75)Ti_(3)O_(12)(BLT)thin films are promising materials used in non-volatile memories.In this work,BLT films were deposited on Pt(111)/Ti/SiO_(2)/Si substrates by rf-magnetron sputtering method followed ...Bi_(3.25)La_(0.75)Ti_(3)O_(12)(BLT)thin films are promising materials used in non-volatile memories.In this work,BLT films were deposited on Pt(111)/Ti/SiO_(2)/Si substrates by rf-magnetron sputtering method followed by annealing treatments.The microstructures of BLT thin films were investigated via X-ray diffraction(XRD),scanning electron microscopy(SEM)and atomic force microscopy(AFM).With the increase in annealing temperature,the grain size increased significantly and the preferred crystalline orientation changed.A well-saturated hysteresis loop with a superior remnant polarization of 15.4μC/cm^(2) was obtained for BLT thin films annealed at 700°C.The results show that the dielectric constant decreased with the increase in grain sizes.展开更多
Transparent conducting ZnO （zinc oxide） thin films with an average thickness of 130 nm were deposited on glass substrates at substrate temperature of 373 K by RF （radio frequency） sputtering and annealed in nitrog...Transparent conducting ZnO （zinc oxide） thin films with an average thickness of 130 nm were deposited on glass substrates at substrate temperature of 373 K by RF （radio frequency） sputtering and annealed in nitrogen atmosphere （samples S1, S2 and S3） and in open air （samples S5, S6 and S7） at 423 K, 573 K and 723 K for 60 minutes. S4 is reserved as the reference or the as-deposited sample （sample that has not been annealed）. The electrical and structural properties of the films were investigated using four-point probe, XRD （X-ray diffraction） and SEM （scanning electron microscopy）. The as-deposited sample （S4 or sample that has not been annealed） was found to have a resistivity of 11.0 ×10^-4 Ω·cm, while that of the annealed samples lies between 6.0 × 10^-4 Ω·cm and 3.5 × 10^-4 Ω·cm. The XRD analysis of the annealed films shows that they are crystalline with preferential orientation of （002） plane. Other data analyzed from the samples includes the grain size （1.5059 -1.8898 μm）, strain （1.77%-0.11%）, residual stress （4.13-0.26 GPa） and the dislocation density （0.4409/m2-0.2800/m2）.展开更多
Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were in...Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were investigated.SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation.AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain sizes.XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis.The average optical transmittance was above90%in UV-Vis region.The lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity.These results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.展开更多
基金This work was financially supported by the National Defence Science Council of China (NO. 5141002040JW0504) and the Excellent Ph.D Thesis Foundation of Huazhong University of Science and Technology (No. HUST2004-39).
文摘Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.
基金The study was conducted as part of the program of fundamental research of the state academies of sciences(PFR SAS)for 2015e2017 No.23.2.5The project was supported by Marie Curie IRSES,project No.612691 of the EU Framework Programme-FP7The authors thank A.Sainova,Yu.Glushko,M.Surmeneva,and Prof.M.Chaikina for support to the research and fruitful discussion of the results.
文摘Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate,sintered at different mass%ratios.According to Raman scattering and X-ray diffraction data,the deposited hydroxyapatite coatings have a disordered structure.High-temperature treatment of the coatings in air leads to a transformation of the quasi-amorphous structure into a crystalline one.A correlation has been observed between the increase in the Ca content in the coatings and a subsequent decrease in Ca in the biphasic targets after a series of deposition processes.It was proposed that the addition of tricalcium phosphate to the targets would led to a finer coating's surface topography with the average size of 78 nm for the structural elements.
基金supported by the Research Foundation of Liaocheng University(No.318051939)Opening Project of Beijing Key Laboratory of Digital Stomatology(PKUSS20210301)+1 种基金Natural Science Foundation of Shandong Province of China(Nos.ZR2020ME031,ZR2020ME033)Innovation Team of Higher Educational Science and Technology Program in Shandong Province(No.2019KJA025).
文摘Bi_(3.25)La_(0.75)Ti_(3)O_(12)(BLT)thin films are promising materials used in non-volatile memories.In this work,BLT films were deposited on Pt(111)/Ti/SiO_(2)/Si substrates by rf-magnetron sputtering method followed by annealing treatments.The microstructures of BLT thin films were investigated via X-ray diffraction(XRD),scanning electron microscopy(SEM)and atomic force microscopy(AFM).With the increase in annealing temperature,the grain size increased significantly and the preferred crystalline orientation changed.A well-saturated hysteresis loop with a superior remnant polarization of 15.4μC/cm^(2) was obtained for BLT thin films annealed at 700°C.The results show that the dielectric constant decreased with the increase in grain sizes.
文摘Transparent conducting ZnO （zinc oxide） thin films with an average thickness of 130 nm were deposited on glass substrates at substrate temperature of 373 K by RF （radio frequency） sputtering and annealed in nitrogen atmosphere （samples S1, S2 and S3） and in open air （samples S5, S6 and S7） at 423 K, 573 K and 723 K for 60 minutes. S4 is reserved as the reference or the as-deposited sample （sample that has not been annealed）. The electrical and structural properties of the films were investigated using four-point probe, XRD （X-ray diffraction） and SEM （scanning electron microscopy）. The as-deposited sample （S4 or sample that has not been annealed） was found to have a resistivity of 11.0 ×10^-4 Ω·cm, while that of the annealed samples lies between 6.0 × 10^-4 Ω·cm and 3.5 × 10^-4 Ω·cm. The XRD analysis of the annealed films shows that they are crystalline with preferential orientation of （002） plane. Other data analyzed from the samples includes the grain size （1.5059 -1.8898 μm）, strain （1.77%-0.11%）, residual stress （4.13-0.26 GPa） and the dislocation density （0.4409/m2-0.2800/m2）.
文摘Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were investigated.SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation.AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain sizes.XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis.The average optical transmittance was above90%in UV-Vis region.The lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity.These results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.
