Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics ...Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling.Then a comparison between the 1-πand 2-πscalable models is made from the following aspects：the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable models.The two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency（SRF） for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M RF CMOS technology.展开更多
基金supported by the Scientific and Technologic Cooperation Foundation of Yangtze River Delta Area of China(Nos.2008C16017, 08515810103)the Major Science and Technology Project of China(No.2009ZX02303-05).
文摘Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling.Then a comparison between the 1-πand 2-πscalable models is made from the following aspects：the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable models.The two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency（SRF） for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M RF CMOS technology.
