In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by util...In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λFabry-Perot(F-P)cavity with double dielectric distributed Bragg reflectors(DBRs).Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts.The threshold of polariton lasing is about half of the threshold of photonic lasing.Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate(BEC)in nitride semiconductors.展开更多
We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based ...We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect （QCSE） electroabsorption in Ge quantum wells （QWs） with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QW structures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high- speed photocurrent response are investigated.展开更多
By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi pa...By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.展开更多
基金National Key Research and Development Program of China(No.2016YFB0400803)the Science Challenge Project(No.TZ2016003)the National Natural Science Foundation of China(Nos.61704140,U1505253).
文摘In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λFabry-Perot(F-P)cavity with double dielectric distributed Bragg reflectors(DBRs).Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts.The threshold of polariton lasing is about half of the threshold of photonic lasing.Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate(BEC)in nitride semiconductors.
文摘We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect （QCSE） electroabsorption in Ge quantum wells （QWs） with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QW structures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high- speed photocurrent response are investigated.
文摘By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.
